- •Essential Vocabulary:
- •Exercise 1. Answer the following questions:
- •Nanotubules and nanowires
- •Exercise 6. Translate the text in written form.
- •Generation and agglomeration behaviour of size-selected sub-nm iron clusters as catalysts for the growth of carbon nanotubes
- •Exercise 4. Fill in the blanks using terms given below:
- •Self-Assembly in Nanotechnology
- •Exercise 7. Translate the text in written form.
- •Combining nanoscale manipulation with macroscale relocation of single quantum dots
- •Insulator with a gate electrode underneath. Since then, the capacitances of such metal seTs have been reduced to produce very precise charge quantization.
- •Exercise 4. Fill in the blanks using terms given below:
- •Conducting Polymer Nanostructures
- •Exercise 6. Translate the text in written form.
- •Список литературы
Insulator with a gate electrode underneath. Since then, the capacitances of such metal seTs have been reduced to produce very precise charge quantization.
The first semiconductor SET was fabricated accidentally in 1989 by Scott-Thomas in narrow Si field effect transistors. Single Electron Transistor [SET] have been made with critical dimensions of just a few nanometer using metal, semiconductor, carbon nanotubes or individual molecules. A SET consist of a small conducting island [Quantum Dot] coupled to source and drain leads by tunnel junctions and capacitively coupled to one or more gate. Unlike Field Effect transistor, Single electron device is based on an intrinsically quantum phenomenon, the tunnel effect. The electrical behaviour of the tunnel junction depends on how effectively barrier transmits the electron wave, which decreases exponentially with the thickness, which is given by the area of tunnel junction divided by the square of wave length. Quantum dot [QD] is a mesoscopic system in which the addition or removal of a single electron can cause a change in the electrostatic energy or Coulomb energy that is greater than the thermal energy and can control the electron transport into and out of the QD. The nanoparticle is separated from the electrodes by vacuum or insulation layer such as oxide or organic molecules so that only tunneling is allowed between them. So we can model each of the nanoparticles-electrode junctions with a resistor in parallel with capacitor. The resistance is determined by the electron tunneling and the capacitance depends on the size of the particle.
Essential Vocabulary
capacitor конденсатор
capacitance емкостное сопротивление
source electrode электрод истока
tunnel junction туннельный переход
gate capacitance емкость затвора
inject инжектировать, вводить
quantum effect квантовый эффект
integrated circuit интегральная схема
charge quantization квантование заряда
gate electrode управляющий электрод, электрод затвора
gate voltage напряжение управления, затворное напр.
lead вывод
source исток, источник
drain сток
intrinsic собственный
Exercise 1. Answer the following questions:
What does single-electron transistor consist of?
What is the tunnel junction?
What happens when voltage is applied across two electrodes?
What enables us to control the motion of a single electron through tunnel junctions?
How did the discovery of the transistor change the world?
What does the Moor’s law state?
What is the function of transistor in today’s digital integrated circuit architecture?
When were the effects of charge quantization first observed?
When and by whom was the first SET made? Describe its arrangement.
Who and when fabricated the first semiconductor SET? Describe it.
Exercise 2. Read and translate the following international words:
Principle, quantum, asymmetrically, locate, tunnel, voltage, media, energy, blockade, effect, phenomenon, microminiaturization, communicate, silicon, technology, dominate, integration, theory, critical, barrier, resistor, model.
Exercise 3. Match each word with its definition:
Source a. of or relating to the essential nature of a thing;
inherent.
Drain b. a transition region between regions of differing
electrical properties in a semiconductor
Junction c. the electrode region in a field-effect transistor
into which majority carriers flow from the
interelectrode conductivity channel
Capacitor d. the electrode region in a field-effect transistor
from which majority carriers flow into the
interelectrode conductivity channel
Intrinsic e. a device for accumulating electric charge, usually
consisting of two conducting surfaces separated
by a dielectric
