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performance jiio6oh 3a^aHH 9. to respond Ha cwrHaji

capability naM^iTH ⁱiejiOBeKa 10. SKOHOMimecKafl benefit

competition Mexny cJ)Hp\faMH

1 IcpcBCAHTe cjienytomne cjioBa. Of>parnTe BHMMamie Ha to, mto upet^HKCbi dis- inun-, mo/-, non-, ir- npH^aiOT cJiOBaM 3HaHCHHC orpnuaHHH.

discharge v, disconnect v, disclose v, disadvantage n, disappear* invisible a, inaccurate a, inactive a, incapable a, incompact a unbalance v, unbelievable a, unconventional a, uncontrollable*¹ : malfunction n, malpractice /?, malformed a : non-effective a, non-metallic a, nonconductor n irregular a, irrelative a, irresistible a

4. YHMTecb cjiywaTb m roBopuTb.

9. OTBen>Te Ha cneAyiomHe Bonpocbi, Hcnojib3yn HHcfmpiviauHK) 0CH0BH0r0 TeK^

1. What would you say about electronics?

2. What would you say about the invention of the transistor?

3. What were the advantages of the first transistors over the best tubes?

4. What would you say about the early transistors?

5. Why is the size of transistors of prime importance?

6. What is the second performance benefit resulting from microelec­tronics?

9. OGoouufre (Ha aiimHhckom «3biKe) micJjopMauHio o pa3pa6orKc hhTcrpajibHbix cxcm . FloMawHee 3aflaHne

1. IIOBTOpHTe CTpyKTJpbl aHrJlHMCKOrO npe^J10»eHM51 H CpeHCTBa BblflBJICHHA 4)JHK- iihm cjiob. BbinoJiHHTe ynpa^KHenHH.

2. H3yMmTe cJioBa h cJioBOcoMeTaHMfl h3 nepBoh nacTh ocHobHoro TeKcTa (1—38).

3. NepeBeflHTe nHCbMeHho co cJiOBapeM bTopyio MacTb ocnoBiioro TeKcTa. BHeayflMTopHaH pa6oTa

1. YHMTecb nepeBOflMTb.

   11. IlepeBCAHTe pa3Hbie no cTpyiaype oiipe;jejiHTeJibHbie 6jiokh cymecTBHTe.ibnoro:

1

1. several basic functional units 5, widely accepted unit

2. semiconductor device fabri- 5 relatively cheap source material

cation 7. power-producing element

3. device application g commercially produced mi-

4. progressively thinner layers croelectronic devices

2

the dimensions of the patterns are ...

2. the size of transistor gate structures is ...

3. the manufacture of integrated circuit devices to be used was ...

4* the patterned layers required to make a final device were ...

5- the substrate covered with a protective polymeric material can be ...

• the first step to do is the preparation of the substrate

• the progression of memory technologies available is ...

⁵ %x

12. BbiHBHTe onpc/ieJnncjibHwc 6jiokh cymecTBHTejibHbix. OnpeAeJWTe hx cTpyKxy, py h 4>yHKUHK) b npe^ioxeHMH. IlepeBeAMre npe/vioxeHMH.

1. With the invention of the transistor all essential circuit functions could be carried out inside solid bodies.

2. Plasma etching results in large increase in etch rate.

3. The process is a chemical vapour reaction conducted under re­duced pressure conditions.

4. The electrical resistance of a metal ,wire is a disruption of the or­derly movement of electrons by interactions with the atomic struc- ture of the material.