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- •Volve, point. RiepeBoa cjiob c npetJ)hKcaMn dis-, in-, ir-, un-, non-, mal-. NEpboe 3ahhthe Pa6oTa b ayflHTopnn
- •1. LlpoBepbTe, 3HaeTe jim Bbi cneflyKjlLiMe c/iOBa.
- •CjIoBa, hMeiOllXHe oohHaKobUti kOpeHb c pyCckhmh cjioBaMh
- •YhmTecb nepeBoamTb.
- •1.1. 03HaKoMbTcCb c thIiaMh jicbOrO oIipCAeAchHn CyiUcctbhTeJIbHOrO h IiepCBeAhTe hx (BbiiiojiHflercji ycnio):
- •3* A much faster change, a much denser population, much less oil
- •OrpyKTypa:
- •OchobhOfi tekct
- •3JickTpOhHbIx npM60p0b solid-state components — tBepflOTejib- Hbic koMnOhchTbl, nOJiynpObOilHh- koBbie koMnOHeHTbl capacitor — koHne HcaTop overall reliability — HaAexHocTb chcTe-
- •[. The number of circuit components; the use of low gas velocities
- •Rapidly developing technology of smaller electronic components
- •The increased complexity of the designs to be implemented will be
- •Electronics and Microelectronics
- •6Oh MauiHHbi 8. Prediction of pe3yjibTaT0b
- •OGoouufre (Ha aiimHhckom «3biKe) micJjopMauHio o pa3pa6orKc hhTcrpajibHbix cxcm . FloMawHee 3aflaHne
- •H3yMmTe cJioBa h cJioBOcoMeTaHMfl h3 nepBoh nacTh ocHobHoro TeKcTa (1—38).
- •NepeBeflHTe nHCbMeHho co cJiOBapeM bTopyio MacTb ocnoBiioro TeKcTa. BHeayflMTopHaH pa6oTa
- •IlepeBeAhTe cJie/iyiomHe onpeaeJUfTejibHbie 6jiokh cymecTbhTeiibHoro:
- •Entirely new handling
- •IIpoBepbTe, KaK Bbi 3anoMhMnM c/ioBa.
- •Silicon and Germanium
- •3. YnMTecb aHhoTnpoBaTb m pecfrepupoBaTb. TeKct 2.1 c
- •Semiconductors as Materials
- •BHeayflMTopHan pa6oTa
- •AKuenTopHaa npHMecb, jTempyioiJuaH npHMecb, npHMecb, Ha- hochMaa na n0BepxH0cTb n0Jiynp0b0hhhKa
- •TpeTbE 3ahhthe KoHTponb m3yHeHHoro MaTepiiana
- •At the turn of the 18th century nobody knew of semiconductors.
- •The average wire length can be estimated by a very useful statistical formula.
- •IlepeBeAhTe tckct ycTHo c jiHcTa. 03arJiaBbTe tckct. 3naweHne bUjiciieHHbix cjiob bu
- •Materials Requirements
- •KompoJib yMeHMfl nepeBoamTb nMCbMeHho co cnoBapeM. TeKct 2.3 c
- •Major Steps in the Growth of Computer Technology
- •KoHTponb yMeHmh aHhoTnpoBaTb m pecfcepMpoBaTb. TeKct 2.4 c
- •Made in Space
- •In order to launch full-scale industrial production of mono- crystalline semiconductors, bioactive preparations and other sub'
- •TeKct 2.5 c
- •Photoresists
- •TeKct 2.6 c
- •Ceramic-to-Metal Seals
- •KoHTponb yMeHmh roBopMTb.
- •NEpboe 3ahhthe
- •CjioBa HcxoAHoro ypoBhh h h3 npeAUiecTByioumx pa3/ieJiOb
- •Passive
- •Ochobhom tekct
- •Problems in Microelectronic Circuit Technology
- •Let us see what a film technique is like.
- •In this way many identical thin-film devices can be made on a single sheet of material, which then are cut apart to yield individual devices.
- •Increasing interest in submicron layer now poses new problems. New developments in materials are believed to be due70 to new manufacturing forms and vice versa.
- •Integrated circuit technology is evolving so rapidly that even a period as short as six months can produce a significant change.
- •3. IIpoBepbTe, KaK Bbi 3anoMhMrm cnoBa.
- •FloMaiuHee 3aaaHne
- •BHeayflMTopHan pa6oTa
- •Step n 1. Uiar; 2. Mepa; 3. CTyneHb,
- •Delineate V ycTaHaBjwBaTb pa3Mep, oMepiaHmJi
- •Multiplicity n 1. MHoroMhcJicHHocTb; 2. Pa3Hoo6pa3Mc; 3. C/ioxHocTb multiplier n 1. MHoxmejib; 2. Iio6a-
- •Btopoe 3ahhthe Pa6oTa b ayAhTopnn
- •Tungsten
- •YhmTecb aHhotMpoBaTb m pecfrepMpoBaTb tckct. TeKct 3.3 b
- •513BIKe. IIpOBepbTe npaBhjIbHocTb IlOhhMaHHfl TeKcTa.
- •Dry Process Technology
- •BHeayflHTopHan pa6oTa
- •TeKct 3.4 b
- •High Pressure Oxidation of Silicon
- •NpoBepbTe, KaK Bbi yMeeTe aHhoTnpoBaTb mjim pecJjepupoBaTb
- •TeKct 3.6 b
- •Molecular Electronics
- •LlpoBepbTe, KaK Bbi cyMeeTe nepeBecTm flai-moe ctmxotbopohiio. TeKct 3.7 b
- •Chip Fabrication
- •TpeTbE 3ahhthe
- •TeKct 3.8 b
- •Submicron Technology
- •TeKct 3.9 c
- •Optical Lithography
- •TeKct 3.10 c
- •Iiepboe 3aHflThe
- •RipoBepbTe, 3HaeTe jim Bbi cjieAytoujiie cjioBa.
- •OpHHaCtMe I — 06ct0flTe;ibCtb0 1
- •IlpHMaCtHe II — 06cT0hTeJIbCtb0 1
- •In obtaining the possibility of change the designer can face ...
- •HapeMmh tHna economically — 06cT0JrrejibCtb0
- •Ochobhom tekct
- •Viewed72 in the contemporary scene and historical perspective the computer stimulates man.
- •RipoBepbTe, KaK Bbi 3anoMhm/iM cnoBa nepBort nacTm ochob- Horo TeKcTa.
- •FloMauiHee 3aAamie
- •BHeayflMTopHan pa6oTa
- •YhmTecb nepeBoamTb.
- •H3yHmTe cnOBa m cnoBOconeTaHmw ochobhoto TeKcTa.
- •Count V 1. ChhTaTb, noncHmTbiBaTb, 2. NojiaraTbca Ha
- •Monitor V l kohTpojinpoBaTb, Ha- 6jiKxnaTb; 2. YnpaBJiflTb
- •Incorporation n o6'be£hHeHMe, Kop nopauHh
- •NpMhmMaTb ynacTMe share characteristics — hMeTb o6mne xapaKTepncTmkm
- •Unified o ennHoo6pa3HbiR
- •AnnpoKcmMaiiMh
- •XchMblil
- •Interface vehicle — 3KpaHoruiaH
- •IlepeBeitfn'e nHCbMchho co cjioeapeM bTopyro nacTl ocHobHoro TeKcTa (II). Bpe- mh nepeBQaa — 60 mhHyr.
- •YsMTecb KpaTKo m3naraTb TeKct.
- •RipoBepbTe nHCbMcunuH nepeBo.A bTopofi wacTh ocHobHoro TeKcTa (II).
- •IIpoBepbTe, KaK Bbi 3anoMhh;m cjioBa (Bbi6opowHo).
- •YhmTecb nepeBOflMTb.
- •Old and New Concepts
- •TeKct 4.2 b
- •Personal Computer
- •YhmTecb aHHompoBaTb m pecJjepupoBaTb. TeKct 4.3 b
- •Computer Trends
- •4. YhmTeCb rObOpMTb.
- •BHeayflMTopHan pa6oTa
- •RipoBepbTe, 3HaeTe jim Bbi c/iOBa.
- •IIpoBepbTe, KaK Bbi yMeeTe onepupoBaTb rpaMMaTmHecKmmm m neKcmHecKmmm flB/ieHMflMm ripn nepeBoAe. TeKct 4.4 b
- •TeKct 4.5 b
- •Electronic Impact
- •Parallelism
- •TpeTbE 3ahhthe KoHTpojib m3yseHHoro MaTepuana
- •KoHTponb cjiob b cJlObocoHeTaHMflX.
- •The above considerations also lead to another important conclusion.
- •Considerable experiments with hydrogen have found its use as fuel.
- •KoHTponb yMeHMfl nepeBOflMTb. Tckct 4.1 c
- •TeKct 4.2 c
- •Buffering
- •TfeyHmTe cnoBa m cnoBocoHeraHMn m3 ocHobHoro TeKcTa.
- •TeKct 4.3 c
- •Automakers Going Digital
- •KoHTponb yMeHmr 3hhotmpoBaTb m pecfjepMpoBaTb.
- •TeKct 4.5 c
- •Electronic Games
- •TeKct 4.6 c
- •Addictive Games?
- •KoHTponb yMeHMfi roBopnTb. TeKct 4.7 c
- •Electronic Games — a Summary of the Risks
- •TeKct 4.8 c
- •Effort n 1. YcMJine, HanpaxeHHc;
- •Effects on Health
- •NEpboe 3ahhthe Pa6oTa b ayflMTopmi
- •LlpoBepbTe, 3HaeTe nn Bbi cneAyK)mne cnoBa.
- •Improve V enable V alter V distribute V capacity n
- •YhmTecb nepeBOflMTb.
- •(BbipaxaeT 6oJibiuyio creneHb Heo6xo.Hhmocth — Kojuauda,
- •(BbipawaeT ooyc.IoB-ieHHyjo hjih BbHiyHtaeitHyio neodxoduMocntb)
- •Do you have to assume a model of a particular type?
- •It is necessary to develop a new model.
- •It was necessary to come back to the history.
- •Pa6oTa, nporpaMMa in an effort — nbrrancb, cTpeMhCb design effort — kohcTpyKTopcKafl pa- 6oTa
- •It is necessary to examine the factors.
- •It is true that... Hccomhchho. It is certain... Hccomhchho ... It is beyond doubt that... Hccomhchho .. YBepeHiiocTb:
- •YTomieHHe:
- •BepoHtHocTb (h02m03kh0, eeponmHoy.
- •It is believed that... It is supposed that ...
- •Ochobhom tekct
- •Capacitor n (KomieHcaTop), capacity n
- •Operate V, manipulate V 5. Receive V, achieve V
- •1. YhmTecb nepeBoamTb.
- •M3yHmTe cnoBa n cnoBocoHeTahma ochobhoj-o TeKcTa.
- •IlpObOilHTb carry n nepeHoc
- •Data n pi /iaHHbie, sing, datum process data — ziaHHbie o6pa6oTkh
- •Exact a tomHbift
- •ABapnfl; 3. 0tKa3, nojioMKa break through — npopbiBaTb(cfl)
- •ChhXpOhh3aUHfl locking device — ycTpoftcTBo 6jiokh- pOBaHHfl lockword — napojib 6jiokhpobkh lock V 1. 6jioKHpoBaTb, 3annpaTb; 2. (j)mkcMpOBaTb; 3. ChhXpOhh3h poBaTb
- •NpcflCTaBJiflTb (otmct); 5. MhTaTb JieKuhk)
- •Challenge n 1. 3anpoc, Tpe6oBaHHe; 2. Npo6jieMa, coMHeHHe challenge V 1. 6pocaTb bw30b; 2. Co-
- •Pervade V 1. OxBaThTb; 2. NpoHhKaTb pervasion n 1. OxBaT; 2. NpoHhkhoBc-
- •NpoHmKajomnW; 3. BceoGTjeMjno- uiHfi
- •IIpoBepbTe, KaK Bbi 3anoMhm/iM c/iOBa.
- •TeKct 5.2 b
- •2. K03Cj)Cj)huHeHt rated a homhHajibHbift, pacneTHbift rating n HoviMHaJibHoe 3HaMchHe; pacMctHan BeJiHmhHa
- •Some Definitions They Use
- •TeKct 5.3 b
- •Is There an End to the Computer Race?
- •YsMTecb roBopuTb.
- •TeKct 5.4 b
- •A Microprocessor
- •IIoflroToBbTe BbicTynjieHHe (pacc4hTannoe Ha a»e mhHjTbi) no TeMe “The Microprocessor Has Altered the Architecture of Modern Computer Systems’1.
- •YsMTecb nepeBOflMTb.
- •Software
- •YsmTeCb rObOpMTb.
- •Benefit s BbiroAa, nojib3a benefit V noMorarb; npMHocMTb iiojil.
- •TpeTbE 3ahhthe KoHTponb m3yneHHoro MaTepnana
- •KoHTponb cjiob b cjiobocoHeTaHHflX.
- •5.18. IlepeBeAhTe, o6pama« bhhMaHMe Ha k0hTeKcTyaJibH0e sHaneHHe cjiob set, time, times:
- •Industrial research in materials faces a different set of problems.
- •KoHTponb yMeHMfl nepeBOflMTb.
- •IlepeBchKre tckct ycnio c jiHcra. 3HaHemiH BbwejieHHbtx cjiob Bbi nofiMere h3 KowreKcra Modular Controllers for Future Engines
- •Computer Networks
- •What Is the Internet?
- •KoHTponb yMeHMfl roBopnTb.
- •Services and Resources of the Internet
- •3Y; BbinrpbiBaTb for the benefit of — juih, paAm without the benefit — He Hcnojib3y«
- •Iiepboe 3ahhthe
- •CjlOBa, hMeiOmHe oahHaKoBblfi Kopenb c pyCckhmu cji0b3mh
- •YhmTecb nepeBOflMTb.
- •Ochobhom tekct
- •New Developments in Electronic Memories
- •LlpoBepbTe, KaK Bbi 3anoMhm/iM cnoBa.
- •AoMawHee 3aAaHMe
- •IloBTopifTe kohcTpykuhh, b kotopux Heo6xo/iH!vto Hcn0Jib30BaTb rpaMMaThMec- Kyio hhBepChio, h BbinOjihhTe ynpavKhchHfl.
- •HanniiiHTe KpaTKyio aHiioTauHio k TeKcrry.
- •BHeayAmTopHan pa6oTa
- •2. NojiynaTb attainment n 1. Aoctmxchmc; 2. Npn o6peTeHMe
- •YhmTecb nepeBoamTb.
- •M3ynnTe cnoBa m cnoBOconeTaHMn ocHobHoro TeKcTa.
- •3KcnJiyaTauHohHbift; 3. One- paThbHbifi; 4. TeKymnft operate V 1. Pa6oTaTb, AewcTboBaTb,
- •2 Cmhcji; 3. 3HaiieHHe, BaxHocTb significant a 3HaHhMbifi, cymecTbch
- •HeMHoro
- •Cjior MaiiiHhHoro cAoBa Kbyte n khAo6afiT, k6attT (1024 6aflT)
- •3AnycK; 5. HanpaBjieHne, Ten- achiimh
- •2. NpeAcTaBjiaioiuMtt representative n 1. STajioH, o6pa3cu; 2. NpencTaBhTejib
- •2. BbiCTynaTb addressing n anpecauHh, cnoco6 an- pecaiiHh
- •Assign V 1. Ha3HawaTb; onpenejiHTb: 2. 3aBepmaTb
- •Manifold adv bo mHoro pa3 manifold a pa3Hoo6pa3Hbift
- •Coo6meHMe
- •Fit V 1. NOuxOilHTb, cootBeTctbo- BaTb; non6HpaTb; 2 ycraHaBJiH BaTb, co6npaTb; 3. MohtHpoBaTb
- •Core memory — naM«Tb Ha MarHht- HblX cCpAeMhhKaX
- •String (strung) V 1 HaTnrHBaTb; 2. Cbh3bIBaTb
- •03HaKoMbTecb c TepMmHonorMeM.
- •Btopoe 3ah5ithe
- •SyncFiash Memory Benefits
- •IlepeBeflHTe tckct ycmo c JiMcra. Pafwra BbinoJiHfleTCfl noa pyKoboactbom iipeno/ia- BaTeJiH.
- •Information Processing
- •YsMTecb aHhotMpoBaTb m pec£epnpoBaTb.
- •3AMhTepecoBaHHbift concerning prp 0th0cmTejibH0 as far as smth is concerned — mto Ka caeTch
- •Large-scale Integration: Memories
- •YhmTeCb tobOpMTb.
- •BHeayfltiTopHan pa6oTa
- •RioflroToBbTecb k kohTponbHoMy nepeBoAy ocHobHoro TeKcTa.
- •YnHTecb nepeBOflMTb.
- •YsMTecb aHhotMpoBaTb h pec£epnpoBaTb.
- •What is the read-mostly memory?
- •Which variations of read-mostly memories are referred to? The Read-only Memory
- •YhmTeCb rObOpMTb.
- •TpeTbE 3ahhthe
- •Overalls 1. NojiHbift, o6mMft; 2. Npe- AejibHbift
- •IlepeBeziHTe tckct ycnio c Jiwcra.
- •Cache Memory
- •IIpoMhTattTe TeKct. CKaaoue, hto bm ymaJiH o ccd, a ferrite core memory, the bubble memory. Further Memory Developments
- •7. KoHTponb yMeHMfl rObOpMTb.
- •TeKct 6.4 c Random Access Memory
- •TeKct 6.5 c Molecules Get Wired
- •TeKct 6.6 c Quantum Computers
- •Jack Kilby Receives Nobel Prize
- •The Chip Has Changed the World
- •IlepcBeiiHTe tckct hHcbMeiiuo co cjioBapeM. Bpervia nepcBona — 15 mhiijt. Optical Lithography Used to Make Smallest Working Device — with 80 nm Features
- •CthMyJiHpOBaTb excited a b036yacaeHHbift excitement/; 1. B036yxaeHMe; 2. Cth- Myji
- •IlpoHhTaftTe TeKct h Kpanco Hxioaorre ero co/iepKaHHe Ha aHciHhckom sBbuce (5 mhHyr). The Flash Memory Device
- •IlpoHhTaftTe TeKct h KpaTko h3JiowHTe ero co/iepxaHHe Ha aHHiHftcKom sttbike (10 mhHyr). Electron Beam Lithography
- •IlHCbMeHho nepeBe/uiTe tckct co cjiOBapeM (10 mhhjt). Lithography: Basics
- •IlHCbMeHho nepeBeAhTe tckct co cjiOBapeM (15 mhhjt). The Light Fantastic
- •IlHCbMeHHo nepeBeAhTe tckct co cjioBapcM (20 mhhjt). Computer Chips
- •The Key Innovation
- •Text 11
- •The Electronics Revolution
- •The Tempo of the Electronics Revolution
- •Automakers Going Digital
- •Technique/I 1, mcto/I, TexHmMecKMft npneM, 2. Cnoco6, ajiropnTm
- •3HctOpHo-TpaH3mctOpHa« jiornKa,
- •Byx Mai™ AnaToJibeBHa,
- •3AnueBa JlioAmmJia riaa/iObHa mhkp03jiektp0hhka: hactOflLlJee h byZiyilJee
- •1. As far as I know... 5. Intensive efforts have been devoted to...
- •To my knowledge ... 6. The efforts continue in the direction of...
- •For all I know... 7. It appears that the (process) will...
- •10 03HaKoMbTeCb c TepMhHaMh nepBoh HaCth ochobhOrO TeKcTa.
- •HanpaBJi«Tb; 3. NepenaBaTb Ha paccMoTpeHHc; 4. HMeTb othoLiie- hHe, KacaTbc«; 5. O6o3HawaTb, mMe- h0b3Tb
- •In a sense — b h3BecThom cMbicnc, b HeKotOpOm othoIlieHhh sensitives 1. MyBctbhTeJibHbift; 2. Npe- uh3hohHblft
- •Encompass V oKpyxaTb; oxBaTbi BaTb; oKyTbiBaTb
- •RipoBepbTe, KaK Bbi 3anoMHmiM cnoBa.
- •3AnHiiiHTe nepeBo#AaHHbix peieBbix 0ipe3k0b:
- •Btopoe 3ahhtiie
- •RipoBepbTe flOMaujHee 3aaaHue.
- •IlpoBepbTc nHCbMemibifi nepeBoa bTopoH Macrw ocHoBiioro TeKcTa.
- •IIpoBepbTe (BbioopoHHo) ynpawHeiiHfl 1.11; 1.12; 1.13; 1.15; 1.16.
- •TeKct 1.1 b
- •Electronic Devices
- •Microelectronics
- •TeKct 1.2 b
- •IlepeBeAhTe tckct ycTho (c JiHcTa). Pa6oTa BbinoJiHfleTch nofl pyKobo/icTbom npeno;ia- BaTe.M The Future of iCs
- •YhmTecb aHhotMpoBaTb m pecJjepupoBaTb.
- •Integrated Circuits
- •YhmTecb roBopuTb.
- •The performance benefit stems from ...
- •BHeayAmTopHafl pa6oTa
- •Ri0flr0t0BbTecb k kohTpo/ibHoMy nepeBoay ocHobHoro TeKcTa
- •TeKct 1.4 b
- •Integrated Circuit Development
- •TeKct 1.5 b
- •Integrated Circuits: a Brief History
- •TpeTbE 3ahhthe KoHTporib m3yneHHoro MaTepnana
- •Electron beam changes physical characteristics of exposed resistor so that after chemical etching pattern is left on clear substrate.
- •The principles involve preparing detailed plans and careful monitoring.
- •Integrated Electronics
- •KoHTpo/ib yMeHkm nucbMeHhOro nepeBOfla.
- •Getting Nano wired
- •KoHTponb yMeHma aHHcroipoBaTb m pec£epnpoBaTb. TeKct 1.3 c
- •IIpo*Hfrattre tckct h Kpaixo Hxioxofre ero coaepxaHHe ua pyccKom aibiKe. QjamaBbTe ero.
- •TeKct 1.4 c
- •Komponb yMeHWi aHHcmipoBaTb h pecfrepupoBaTb. TeKct 1.3 c
- •I IpoHHrattre tckct h Kpaixo Hxioaorre ero cojepKaHHe Ha pyccKom jowxe. OwJiaBbTe ero.
- •TeKct 1.4 c
- •OGcyujiTe npo&netvibi Hcn0Jib30BaHh*I nojiynpoBoahhkob.
- •06Cyzurre npewviymecTBa mhKpoarceKTpOhhkh.
- •Iiepboe 3ahm I me
- •YhmTecb nepeBoamTb.
- •03HaKoMbTecb c thiisimh npaBoro onpe/ieJieHHfl cymecTbhTejibHoro h nepeBe/mTe hx (BbinOjiHfleTCfl ycTHo).
- •One, ones
- •Ochobhom tekct
- •Semiconducting Materials Engineering Progress
- •IIpoBepbTe, KaK Bbi 3ariOmhMnM cnoBa nepBoti nacTm ochob- hofo TeKcTa.
- •Trace V (trace n — one#)
- •FloMaLuHee 3aAaHMe
- •Onpe/iejiHTe 3h3mchhh cjiob one, ones, that, those h it, onupaflcb Ha cpe/icTBa hx BbisiBJieHhh, h nepeBeAhTe npezuioxeHHn: one, ones
- •That, those
- •IlepeBezurre nHCbMchHo co cjioBapeM bTopyio wacTb ocHobHoro Tettcra (BpeMfl nepeBo;ia — 60 mmhjtt).
- •H3yHmTe cnoBa n cnoBOconeTaHMfl ocHobHoro TeKcTa.
- •6BiTb xapaKTepnoft nepToft
- •Enhance V noBbiiuaTb; yBcJiMhm- BaTb; ycMJiMBaTb
- •Determine V 1, onpe.NejiflTb, ycTa- HaBJiMBaTb; 2. PcrnaTb; 3.3acTaBJiHTb;
- •OrpaHmmmBaTb
- •BblHhcJieHHbltt
- •2, Pa3.NMwaTb appreciably adv 3aMeTHo, 3Ha»jHTejib- ho
- •Device-related — cBfl3aHHbitt c ycT- pOflCtbom
- •NpMhhMaTb ynacTHe, coTpyAhh- naTb
- •Turn V 1. O6pamaTbc«, npwGeraTb;
- •BpamaTbCJi; 3. Cocpe/ioTohmBaTb, HanpaBjwTb; 4. NpHbohhTb b KaKoe-ji. CoctojihHe
- •OwepeiiHocTb in turn — no o4epe;m
- •Immensely advoneub, 4pe3BbiliaMHo
- •Pe3ioMHpoBaTb
- •Wafer n 1. NojiynpoBOiiHh koBan njiacTmHa; 2. NjiacThhKa; njiaTa; no;I /ioacKa; 3. KpncTajui, mc
- •Overlayer n noKpbiTHe, bcpxhhh
- •YuejibHbiR specifically adv 1. Oco6eHHo; 2. Tom- ho; 3. B HaCthoctm
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