a steady quantitative evo­lution

1. computer-aided design

2. entirely solid-state components

3. small-scale integrated circuits

4. metal-oxide semiconductor fleld- effect transistor technology

5. several key developments

6. low power consumption

2

1. complete arithmetic and logic v

2. modem scientific and business computers

3. commercially produced microelectronic devices

12. IlepeBeAHTe nHCbMeiiHo co cjioBapeM BTopyio MacTb ocHOBHoro TeKCTa. (BpeMfl nepesoAa — 60 mhhjt.)

2. TfeyHmTe cnoBa m cnoBocoHeraHMn m3 ocHobHoro TeKcTa.

(D

1. Effort n 1. YcMJine, HanpaxeHHc;

2. Pa6oTa, nporpaMMa in an effort — nbrrancb, cTpeMhCb design effort — kohcTpyKTopcKafl pa- 6oTa

research effort — nporpaMMa nccjie- AOBaHHfi, HccJienoBaieJibCKafl pa- 6oTa

development effort — nporpaMMa on bn Hbix pa6oT

2. reliability n HanexHOCTb, pa6ox cn0C06H0CTb

reliable a HajiexHbifi; npoMHbift rely on/upon v 1. nojiaraTbcn Ha; 2. onn* paTbCH Ha

2. performance n 1. paGonafl xapaKTC' pncTHKa; napaMeTpbi; 2. pa6o?^a (JiyH kuhoh HpOBa HHe

circuit performance — napaMeTpu cxe-

Mbl

perform vBtinojiH^Tb, ocymecTBJiHTb; coBepmaTb

2. predict v np0rH03Mp0BaTb prediction n npomo3HpoBaHHe predictive a npencKa3yeMbiH predictive coding — KonnpoBaHne c

npcjicKa3aHMeM

2. quantitative o KOJiHMecTBeHHbiri quantity n 1. kojihhcctbo; 2. pa3Mep,

BejiHMMHa; 3. flOJia, nacTb; 4. cyM- Ma; MHOxecTBO quantum {pi -ta) n 1. kojimmcctbo;

2- HacTb; 3. KBaHT Cpaenume: qualitative a KanecTBeHHbiFi quality n 1. KanecTBO, copT; 2. cboJictbo

2. capability n 1. cn0C06H0CTb, B03- MO)KHOCTb; 2. xapaKTepncTMKa output capability — BbixonHaa xapaK-

TepHCTMKa capability of reacting — npojiyKTMB- HOCTb peaKUHM capable a cnoco6HbiM

2. prior to prp jxo, paHee priori npefliuecTByiomMW

priority n 1. npnopnTeT, ncpBeHCTBo;

2. npeniiiecTBOBaHMc

priority processing — npHopMTeTHaa o6pa6oTKa

2. exceedingly adv 4pe3BbmafiHO exceed v npeBbimaTb

excess n npeBbimeHMe; H36biTOK in excess of — 6ojiee neM; cBepx, ;io- nOJlHMTCJIbHO

carry out v BbinojiHHTb; np0B0HMTb carry on v nponojiacaTb carry v 1. hcctm; 2. nojwepxHBaTb;

2. IlpObOilHTb carry n nepeHoc

carry bit — 6mt nepeHOca carry in (Cl) — bxoji, BxonHofi cm man nepeHoca carry out — BbixojiHofi cMmaji nepe­Hoca

carrier n HOCMTejib, aepacaTejib

10. solid n TBepiioc Tejio solid a npoMHbifi, TBepubiH solid-state — TBepaoTejibiii; nojiynpo-

BOUHHKOBblH

solid model — o6"beMHa5i MoneJib

10. goal n uejib, 3a^ana goal-seeking — ucjieHanpaBJieHHbifi

(o noucKe)

10. realize v 1. npencTaBJiHTb cc6c; 2. ocymecTBMTb; nocTMmyTb realization n 1. noHMMaHMe; 2, floc-

TM)KeHHe; ocymecTBJieHHc real a acficTBMTeJibHbiM real address — HCTHHHbifi aapcc reality n ucftcTBMTejibHOCTb, (JiaKT really c^viiciicTBHTeJibHO, Ha caMOM nejie

10. scalen 1. uiKajia, MacuiTa6; 2, pa3- Mep, BejiHMHHa; 3. crcneHb, rpa,aa- UMH, ypoBeHb; 4. {pi) Becu; 5. rpanyn- poBKa; 6. CTyneHb; 7. CMCTeMa mcmmc- jieHHfl; 8. pa3MepHOCTb

on a large scale — b 6ojibmoM Mac- uiTa6c

on a full scale — b HaTypaJibHyio Be- JlMMHHy fine scale — MeJiKMft MacuiTa6 reduction scale — MacmxaG y vieHhiiieHHH scale v 1. BecHTb, HMeTb Bee; 2. B3Be- LUHBaTb; 3. OHHiuaTb; cHHMaTb oKa- jiHHy; 4. BbiHHCJiflTb; onpejxcjiaTb; 5. rpanynpoBaTb, MacmTa6npoBaTb scale up — noBbimaTb; paciiinpflTb (paBHOMepHO) scaling up — yMHoaceHMe Ha KOHCTaH- Ty, jiHHeftHoe yBejiHHeHMe scale down — noHHacaTb; jiejieHMe Ha KOHCTaHTy scaling n 1. Bbi4McncHHepa3MepoBno MaciiiTa6y; 2. o6Mep, H3MepeHHe scaling circuit — cxeMa Maciirra6Mpo~

BaHIlR

scaled a 1. Macurra6HpoBaHHbifi; H3- MepeHHbiii

scaler n AejiMTejib MacroTbi, cmctmhk

10. event n 1. HB/ieHne, co6biTMe; 2, pe- 3yjibiaT, mcxoa; 3. peaKunn, onepauMM eventual a 1. B03M0)KHbift; 2. KOHen-

Hblft

eventually adv b KOHue kohuob

10. respond v pearnpoBaTb, oTBcnaTb response n peaKUMH; otbct; nyBCTBM-

TeJIbHOCTb time response — BpeMeHHan xapaicre- pHCTMKa

10. rate n 1. TeMn, cKopocTb; 2. KJiacc, pa3paa; 3. nopuHH, HopMa, koscJjcJjh- uneHT

ratio n 1. nponopiiMH, OTHOiueHMe;

2. K03Cj)Cj)huHeHt rated a homhHajibHbift, pacneTHbift rating n HoviMHaJibHoe 3HaMchHe; pacMctHan BeJiHmhHa

10. far below HaMHoro HMxe

far a 1. Ha 6ojibwoe paccTOHHMe; Aa- jieKo; 2. jiaBHO far adv ropa3Ao, HaMHoro as far as — ao; HacK0.nbK0 far and near — riOBCiOAy, Be3Ae far from — coBceM hc far back — ApeBHHft far between — peAKuft

10. shrink (shrank, shrunk) v coxpa- luaTbcfl; y m e h buiaTbc h shrinkages coKpamcHHe; yMCHbiueHHe

11. dimension n (DIM) 1. pa3Mep; BejiH- 4MHa; o6t>cm; 2. BaxHOCTb dimensional a mMeiolumft H3MepeHHfi,

FipOCTpaHCTBeHH bi ft

10. point n 1. TOMKa; 2. MecTo; 3. bo- npoc; 4. cyrb; uejib

point of view — TOMKa 3peHHH point mistake — oiun6Ka nopHAKa point mode — TOMeMHbift peacMM point of origin — TOMKa Hana^a npo- ipaMMbi in point — paccMaTpHBaeMbift pointless a 6eccMbicJieHHbift point v yKa3biBaTb, noKa3biBaTb

point out v yKa3biBaTb pointer n yKa3aTe;ib

10. Benefit s BbiroAa, nojib3a benefit V noMorarb; npMHocMTb iiojil.

3Y; BbinrpbiBaTb for the benefit of — juih, paAm without the benefit — He Hcnojib3y«

10. stem v nponcxoAMTb, B03HHKaTb stem n 1. HoxKa, noACTaBKa; 2. cTep-

oKeHb; rojioBKa; 3. 0CH0Ba

10. coupling n coeAHHeHne coupler n coeAMHHTejibHbift npn6op couple n 1 napa; 2. sjicmcht

11. attainable a AocTMXMMbift attain v 1. AocTHrHyTb; Ao6MTbcn,

2. NojiynaTb attainment n 1. Aoctmxchmc; 2. Npn o6peTeHMe

10. Manifold adv bo mHoro pa3 manifold a pa3Hoo6pa3Hbift

fold v 1 . cKJiaAbiBaTb; 2. Ay6jiHpobaiL -fold BO CTOJIbKO-TO pa3 tenfold — b 10 pa3

10. switching n nepeicniOMeHHe, kom MyTHpOBaHHC

switch v nepeKJHonaTb, BOKwaTb switch n nepeioiioMaTejib switch off v BbiicnjOMaTb switch on v BKJiiOMaTb switch point - TOMKa BeTBJieHMH

10. handling n 1. o6pa6oTKa; 2. ynpaB­JieHMe; 3. BbinojiHeHMe; 4. onepupo- BaHMe

handle v 1. ynpaB/iHTb; 2. MMeTb Reno c weM-Ji.; 3. cnpaBMTbcfl handler n ycTpoftcTBo; MaHMnyjwrop

10. concern n 1. AeJio, KacaTejibCTBo; 2. MHTcpec, ynacTMe; 3. BaXHOcTb concerned a MMeioiuMft othowchmc;

3AMhTepecoBaHHbift concerning prp 0th0cmTejibH0 as far as smth is concerned — mto Ka caeTch

10. Overalls 1. NojiHbift, o6mMft; 2. Npe- AejibHbift

overall dimensions — ra6apnTHi>ie pa3- vtepu

overall efficiency — o6iuh^ koscJjcJjh- uneHT nojie3Horo .neficTBMH

10. shortcoming n 1. HeaocTaTOK; 2. hc-

XBaTKa

short n KopoTKoe 3aMbiKaHne short a 1. KopoTKMft; 2. He/x0CTaT0M- HblH; 3. flecJ)HUHTHblft shortage n HexBaTKa short-term memory — KpaTKOBpeMCH - nan naMHTb

10. manufacture v H3roTaB^HBaTb; Bbi- JieJIblBaTb; npOM3BOflMTb manufacturer/! 1. M3roTOBMTejib; 2. npo-

Mbiui/ieHHMK; npeiinpHHHMaTejib manufacturing n npoH3Bo/icTBo; 06= pa6oTKa

10. assemble vco6npaTb, M0HTMp0BaTb assembly n 1. c6opKa, MOHTaac; 2. ar-

peraT

assembler n 1. ycTaHOBKa zuth c6op- km; 2. acce\i6jiep («3biK)

10. wiring n 1. pa3BO/iKa; 2. MOHTax wire n np0B0/i0Ka; npoBon

wire v cB«3biBaTb; cJjopMHpoBaTb pa3- BOflKy wiry a npoBOJioMHbift wire wrap — MOHTax (npoBO/lOB) Ha- KpyTKoR

10. ultimately adv b KOHiie kohuob; b KOHeMHOM c*ieTc

ultimate a 1. noc/ie/XHMfi; 2, ochobhoh

10. concept n 1. Teopna; 2. o6mee npe/i-

CTaBJieHHC

conception n 1. TOMKa 3peHM«; 2. no- HHMaHHe

conceive v noHHMaTb, npe,acTaBJiHTb ce6e

conceivable o B03M0XHbift, MbicjiMMbifi concept phase — cranny npejiBapM- TeJIbH0r0 KOppeKTHpOBaHHH 36- advents 1. noHBJieHne; 2. npn6biTHe

37. fabricate v 1. BbmyMbiBaTb; 2. npo- M3B0XlMTb, M3rOTOBJI5m> fabricated a c6opHbift; r0T0Bbifi fabrication n 1. np0H3B0jicTB0, H3ro- TOBJicHHe; 2. xojionHan o6pa6oTKa non jiaBJieHMeM; 3. c6opKa H3 ro- TOBblX y3J10B

38. substrate n = substratum 1. no/x- JioacKa; 2. 0CH0BaHHe; 3. Heo6pa6o- TaHHafl nomioxKa

(II)

37. key n 1. kjiiom; 2. igiiom (k ynpax- HeHHiiM h T.n.); 3. nepcicnioMaTe^b, KHonKa

keyboard n miaBMaiypa; KOMMyHMKa- unoHHafl naHejib key-entry = keying-in — bbo/i, c Kjia- BHaTypw

37. exciting a 1.3axBaTbiBaiomMfi; 2. Bbi- Hy>KneHHbiM; 3. HarpyxaiomMii excite v 1. B036y)K.aaTb, Bbi3biBaTb;

2. CthMyJiHpOBaTb excited a b036yacaeHHbift excitement/; 1. B036yxaeHMe; 2. Cth- Myji

exciter n B036yflHTcjib, 3aiiaiomee ycTpoHCTBo, reHepaTop

37. Technique/I 1, mcto/I, TexHmMecKMft npneM, 2. Cnoco6, ajiropnTm

Cp. technology n 1, TexHMKa; tcxhh- mcckhc HayKn; 2, TexHOJiornfl technicals n TexHM*iecKafl TepMHHo- jiorMH

CAD technique — mctoa aBT0MaTM3H- poBaHHoro npoeKTHpoBaHHH circuit technique — cxcMOTexHHKa definition technique — Memo; cJjopMM- poBaHHH pncyHKa

37. in particular — b 0C06eHH0CTH, b MaCTHOCTM

particulars 1. oco6bifi; cneuncJjHMe- CKHft; 2. MHflMBM/iyaJIbHblfi, OT- AejibHbift; 3. no/xpo6Hbifl particularly adv 1. oco6eHHo; 2. b Ha- cthoctm; 3. no£po6Ho; 4. oneHb, Mpe3BbmaftH0

37. pattern/i Lo6pa3eu,iua6JiOH; 2 (|>op“ Ma; nojioxeHne; xapaKTep, 3. CHCTCMa, CTpyKTypa (Ha (J)0T0iua6;i0He); 4. H3o- 6paxeHMe, pncyHOK, cxcMa patterning w ^opMHpoBaHHe cTpyKTy-

pbi, pncyHKa; CTpyKTypHpoBaHHe pattern v 1. (JjopMnpoBaTb pncyHOK; 2. KonnpoBaTb

37. involve v 1 HMeTb, BKJiiowaTb b ce6fl,

2. BbI3bIBaTb; 6bITb CBH3aHHbIM c neM-Ji.; 3. Tpc6oBaTb; 4. npennojraraTb; 5. ycjioacHATb; 6. B03B0HMTb b cTcneHb involved a 1. paccMaTpMBacMbift; 2.

CB«33HHblft (C4CM-JI.); 3. CJIOXHblH

37. junction n 1. coenMHeHMe; ctuk, 2. nepexoii (p-n); 3. TowKa coeflMHeHHfl junction transistor — njiocKOCTHoft

TpaH3Mcrop; TpaH3HCTop c p-n ne- pexonoM

37. conceive v 1. noHMMaTb; 2. ayMaTb, Boo6pa)KaTb; 3. npeanojiaraTb conceivable a 1. noHHTHbift, 2. bo3-

MOXHblft

conceivably adv npcan0Ji0)KHTe^bH0

37. refer v 1. oTCbiJiaTb; ynoMHHaTb;

2. HanpaBJi«Tb; 3. NepenaBaTb Ha paccMoTpeHHc; 4. HMeTb othoLiie- hHe, KacaTbc«; 5. O6o3HawaTb, mMe- h0b3Tb

to be referred to as — HasbiBaTbCH, 0603HaH3TbCfl refcrence/z 1. ccbuiKa, mctohhmk; 2 ot- HouieHMe; 3. o6pa3cu, stcjioh; 4. nc- peiiaHa Ha paccMOTpeHHe, 5. Hanajio OTCHera

in reference to — 0TH0CMTejibH0 of reference — McxoflHbiw, otchct- Hblft; 3TaJI0HHbIM reference language — 3Ta.noHHbifi H3b]K

frame of reference 1. cMcrcMa OTcne- Ta, CHCTewa KoopAHHaT; 2. kpmtc- pnft; 3. TowKa 3peHH5i references n 6H6JiHorpa(t)Hfl, cnncoK jiMTepaTypbi

voltage reference - mctohhmk onop Horo Hanp^xeHMH

37. chip n 1. KpncTajui, 2. MHTerpa^h HaH cxcMa, MC; MMKpocxeMa, Him

2. KyconeK, o6jiomok

chip card — nenaTHaa njiaTa chip density — njioTHOCTb KpMCTaji array chip — MaTpHMHaw MC bare chip — 6ecKopnycHaa MC component chip — GecKopnycHbin KOMnOHCHT

custom chip — 3aKa3Haa MC fast chip — 6bicrpoiieftcTByioma5i Me gate array chip — 6a30Bbitt KpHCTaji.n THna MaTpnubj jionmecKMX 3Jic MeHTOB

individual circuit chip — KpHCTajui e MajioH CTeneHbio MHTcrpauMM master chip — 6a30Bbift KpncTajiji microchip - MHKponpoueccopHa BMC

speech chip — MC CMHTe3aTopa pe nt chip-outs — ncc{)eKTHbie KpncTajui: chipper/i o^HOKpMCTajibHbiK mhkpo npoueccop

37. state of art — cocTOHHMe Bonpoca, ypOBeHb pa3BHTHH HayKH

state n 1. coctohhmc, nojioxeHHe;

2. rocyaapcTBo; 3. ycnoBKJi, pemivi state v 1. KOHCTaTnpoBaTb; 2. 3aaBjisiTb stated a 1. ycTaHOBjieHHbifi; 2. pery- JIflpHblH; (JjHKCHpOBaHHblH

statement n 1. yTBcpxneHne; BbicKa3b BaHHe; 2. onepaTop («3biKa npo- rpaMMHpoBaHHfl)

37. gate n 1. JiorMMecKMft 3JieMCHT»

2. BeHTMJib, 3aTBop; 3. cTpo6-nvi nyjibc

gate circuit — cxeMa JiorMMecKo^r° aneMeHTa; cxeMa bchthjih gateway — MexceTeBoft MHTepcJjeftc diode transistor-logic gate — ajieMcH^ flTJI

discrete gate 1. jionmecKMH aneMeH^ Ha nncKpeTHbix KOMriOHeHTa*’

2. jiorMMecKan HC c MSJioft cTene- HbKD HHTerpauMM intrinsic gate — 3aTBop H3 n/n c co6- CTBeHHOft 3JieKTponpOBOiIHMOCTblO two-input gate — JiornHecKMft 3Ae- MeHT C AByMfl BXOA3MM gate vynpa_B;i«Tb nponycKaHHeM, pe- ryjinpoBaTb (n0T0K) gate off — BbiKJiiOHaTb gate on — BKJiK>43Tb

37. define v 1. onpeAcjiaib; 2. o6o3H3- qaTb

defined a onpcAeACHHbift, H3fiAeH- Hblft, BblHMCJieHHblft definite a 1. onpeACJicHHbift; 2. tom- Hblft

definition s 1. onpcAejieHne; 2. neT- KOCTb

37. array s 1. Macca, MaccHB, MHoxe- ctbo; 2. nepeneHb, nopHAOK; 3. M3T- pnua; 4. pacnojioxcHHC

array cell — 3JieMeHT MaccMBa, M3T- pnua

array pilch — uiarTa6jiHubi array processor — MaTpHMHbiH npo- ueccop cell array — MaTpnua sweeic image array — MaTpnua H3o6paxeHHft cTpyKTyp piggyback array — pa3MemeHHe oa- HOil MC HSAApyrow

37. boundary s 1. rpaHHua; 2. Komyp, OHepTaHne; 3. npeAeji, orpaHHweHHc boundary cluster — rpaHHHHoe mho-

XeCTBO

bounds 1. rpaHHua; 2. npeAeji bound v 1. orpaHHHHBaTb; 2 rp3HM4MTb bounded a orpaHMHeHHbift mark v 1. o6o3H3M3Tb, MapKMpo- ^Tb; 2. xapaKTepH30BaTb, oueHHBaTb marks 1. 3H3k; oTMeTKa; 2. noK333- Tejib, npn3HaK; 3. HopMa; 4. AeAe- Hne uiKajibi; 5. opncHTnp; ucjib mark reader — ycrpoftcTBo aw chh- TblBaHHH MeTOK marking s MapKHpoBKa

chip marking — MapKHpoBKa MC

marked a 1.33MeTHbift; noMewcHHbift;

2. rpaAynpoBaHHbift markedly adv 3aMeTHO, 3H3HMTeAbHO

55. shifting s CMemeHHe

shift v 1. nepcvtemaTb, cABHraTb,

2 M3MCHHTb

shifts 1. cabmh H3MeHeHHe; 2. nepe- mch3; cMeHa; 3. nepeKJiiowcHMe shift lock — 6A0KHp0BKa cABMra shift register — cABMroBofi perncrp logical shift — AoninccKMtt CABnr shifter s cABMroBbitt perncTp level shifter — cxeMa CABMra ypoBHH

55. fit v 1. ycTaHaBJiHBaTb; mohtmpo- BaTb; 2. roAHTbc«; 3. noAroHHTb fits 1. nonroHKa; c6opK3; 2. noc3AK3 fitfl 1, nOAXOAHUIMft; 2. IDTOBblH fitting s mohtsx, c6opK3

56. packings L MOAeJib, Kopnyc; 2. H3- 6hbk3, ynAOTHCHHe; 3. K0MruieKT0- B3HMC, K0MI10H0BK3

pack v 1. yn3KOBbiBaTb; 2. yKJi3AbiB3Tb packs 1. Kopnyc, yn3KOBK3; 2, c6op- K3; 6jiok; 3. n 3Kct, cb«3K3 packages 1. Kopnyc,yn3K0BK3; 2. H3- 6op, MOAyib; 6jiok; 3. mohtsx b Kopnyce

packet assembling — rraKeTHOc 3C- ceM6jiHpoB3HHe

55. mode s 1. mctoa, cnoco6; 2. pexMM; yCJIOBMH, 3. <J>opM3, bka, THn; 4. npHH- unn

charge-storage mode — peacMM H3KO- nJieHMH 33pflA3 failure mode — bma otk333 in-line production mode — noTOMHbift MCTOA npOH3BOACTB3 simulation mode — mmht3Umohh3h MOACAb

55. sense s 1. CMbicji, 3H3MeHHc; 2. MyB- ctbo, omyiueHHe; 3. ono3H3B3Hne, CWMTbIB3HHe; 4, H3MepeHHe, OTCHeT,

5. H3np3BJICHHe

In a sense — b h3BecThom cMbicnc, b HeKotOpOm othoIlieHhh sensitives 1. MyBctbhTeJibHbift; 2. Npe- uh3hohHblft

sensor n naTMHK, ceHcop sensor array — MaTpnua jiaTHMKOB sensitivity n MyBCTBHTeJibHocTb, tom- HocTb(npn6opa) sensibility n MyBCTBHTejibHOCTb; ynpaB- JlfleMOCTb

55. accessible a 1. nocTynHbifi; 2. yjio6-

Hblfi

access n 1. flocTyn; 2. B03M0)KH0CTb,

2. noiixou; 4. Bbi6opKa (H3 naMHTH) access v HMeTb nocryn accessibility n B03M0>KH0CTb iiocTyna

55. planar a njiaHapHbifi, n;i0CK0CT- Hofi;nJiocKMtt

planar area — luiaHapHan o6;iacTb planar graph — JinocKHft rpacj)

55. line n 1. jihhhh; CTpoKa; 2. Komyp;

2. pflji, pacnojioxeHHe; 4. xapaKTepn- cTHKa; 5. HanpaB^eHHe; 6. ocb; 7. bhu, Kjiacc; 8. noBejeHHe

line chart — jiHHeftHan jiwarpaMMa line counter — cmctmhk ctpok in line — HaxojiHiuHftcH Ha ouhoA jih- HHH

transmission line — jihhhh nepejiaMH stripline — nojiocKOBaa jihhhh fineline a npeuH3HOHHbift; c 3JieMeH- T3MH yMeHbllieHHblX pa3MepOB linear a /iHHefiHbitt

55. waveguide n bojihoboji, cbctoboji wave n BOJiHa; Kojie6aHHe; HMnyjib

CHTHajI

waveband — jxnana30H bojihh

55. emerge v 1. noHBJiHTbcfl, bo3hh KaTb; 2. BblflCHflTbCfl emergences 1. noHBjieHHe; 2. Bbixo > emergency n Bbixou, Bbixoji H3 CTpo« emergency apparatus — 3anacHofi an

rtapaT

55. Encompass V oKpyxaTb; oxBaTbi BaTb; oKyTbiBaTb

56. resolution n 1. pa3pemaioiuafl cno co6HOCTb; 2. peuieHHe

resolve v 1. pacnanaTbcn, pa3JiaraTb ch; 2. peiuaTb resolved a 1. pacTBopHMbifi; 2. pc- UieHHbltt resolving power — pa3peiuaiomafl cno C06H0CTb

55. extend v 1. pacuiHpflTb(cfl); 2. yBc- jiHMHBaTb(cH); 3. pacnpocTpaH«Tb(ca) extended a 1. o6uiHpHbift; 2. npozio

aCHTeJIbHblfi extension n 1. pacmnpeHHe, pacTsix- Ka, 2. yzyiHHeHHe; 3. pacnpocrpa- HeHHe extensive a oGiunpHbiti extent n 1. pa3Mep, BejiHMHHa; 2. cre- neHb, Mepa to a certain extent — jio HeKOTopott cTeneHH

2. RipoBepbTe, KaK Bbi 3anoMHmiM cnoBa.

12. 3AnHiiiHTe nepeBo#AaHHbix peieBbix 0ipe3k0b:

(1-10): in an effort to get a reliable unit; the performance of a de­vice; to predict the achievement; exceedingly high resistance

(11-20): the goal of creating IC; the speed of response depends; to respond at a rate of a few million times a second; capacitors are difficult to shrink; the microscopic dimensions of new

circuits; the point of discussion; the performance benefit re­sulting from microelectronics

(21-30): close coupling of computer conductors; the power consump­tion is of designer concern; the shortcomings of the device

(31-40): difficulty of manufacturing switching systems; to assemble circuit modules; the impetus to new studies; to lead to sim­ilarity; the advent of a new concept; to mount devices on a substrate

12. HafttfHTe b nepBoft nacTH ochobhoix) TeKCTa aHmnftcKHe aKBHBajietnu cjie/jyw)-

IflHX peMCBbJX OTpejKOB, 3ailHIUMTC HX.

1. yBejiHHMBaTb Ha^exHOCTb sjieicrpoHHbix npnGopoB

2. JIO H306peTeHHH TpaH3MCTOpa

3. HH3KHH paCXOA 3HeprHH

4. yMeHbiueHHe paccTOflHMH Mexay ajreMemaMH cxeMbi

5. XapaKTepHCTHKM 3JieKTpOHHbIX CXeM yjiyHLUMJIHCb BO MHOrO pa3

6. MHKp03JieKTp0HHbie npH6opbl COCTOflT H3 ...

4. 03HaKOMbTecb c TepMMHonorneM.

12. IlepeBeAHTe cjie^yiomHe TepMHHu. 3anoMHHTe hx.

Chip: chip family, chip carrier, array chip, face-down chip, base

chip, bipolar chip, dense chip, master chip, gate array chip

Gate: discrete gate, insulated gate, transistor gate, two-input gate,

diode-transistor-logic gate

Junction: back-to-back junction, blocking junction, isolation junction

Btopoe 3ahhtiie

Pa6oTa b ayflMTopnn

1. RipoBepbTe flOMaujHee 3aaaHue.

1. IlpoBepbTc nHCbMemibifi nepeBoa bTopoH Macrw ocHoBiioro TeKcTa.

2. IIpoBepbTe (BbioopoHHo) ynpawHeiiHfl 1.11; 1.12; 1.13; 1.15; 1.16.

2. IIpoBepbTe, KaK Bbi 3anoMHMnM c/iOBa btopom sac™ ochob- Horo TeKCTa.

12. ncpeBeAHTe ycrno c.ie^yiomHe peqeBbie 0Tpe3KH M3 BTopoft nacTH ocHOBuoro TeKcra:

(41-45): circuit technique, the advent of microelectronic circuits, for the benefit of similarity, the invention of new techniques, cir­cuit patterns involved perform best, the transistor is a two- junction device, the term refers to the device, employed in the construction

(46—52): to provide a new manufacturing technique, to involve chang­es, the transistor is a two-junction device, the term refers to the material, base regions on each chip, array chip, fast chip, speech chip, to place on a single chip, a chip can be fitted with a number of transistors, the state of art of assembling, the upper boundary of circuit technology is marked by chips, cell array, matnx arrangement to define a shift

(53—67): the third electrode called the gate, in the common mode of operations, failure mode, in-line production mode, a new mode of integrated circuits, sensor, to sense heating, to change in a sense, dielectric waveguide, integrated circuits emerge, the limit of optical resolution, to extend power, to change in a certain extent

3. YHMTecb nepeBOflMTb.

TeKct 1.1 b

[fepeBe^HTe tckct nucbMeHHo 6e3 cjioBapn. BpeMH nepeBO/ia — 15 mhh>t. 3na*jeime _piJie.ieHHbJ\ cjiob bu cMOJKeTe noHHTb H3 KomeKCTa.

BapnaHT 1

Electronic Devices

The invention of the transistor triggered the rapid growth of the electronics industry. Before transistors, electronic circuits were large, bulky and unreliable, they consumed considerable power (en­ergy) and therefore generated too much heat, which contributed to the deterioration of other circuit parts and materials, such as resis­tors, capacitors and insulation. With transistors, circuits became much smaller, more efficient in the use of energy, and far more re­liable. The higher reliability of the transistor circuits compared to vacuum tube equivalents is an extremely important advantage.

The techniques used to manufacture transistors led to the de­velopment that made it possible to mass-produce very small and highly reliable electronics circuits commonly known as integrated circuits (lCs). ICs have diodes, transistors, resistors and all inter-connecting leads formed on a single piece of semiconductor material.

BapHaHT 2

Microelectronics

It should first be made clear what the term “microelectronics” iniplies. Microelectronics embraces the entire body of the electronic art which is connected with, or applied to, the realization of elec­tronic circuits, subsystems, or the entire systems from extremely small electronic devices. The terms “microelectronics” and “integrated cir­cuits” are sometimes used interchangeably, but this is not correct.

Microelectronics is a name for extremely small electronic com­ponents and circuit assemblies, made by thin-film, thick-fllm or semi­conductor techniques.

An integrated circuit (IC) is a special kind of microelectronics. It is a circuit that has been fabricated as an inseparable assembly of elec tronic elements in a single structure. It cannot be divided without de­stroying its intended electronic function. Thus, ICs come under the general category of microelectronics, but all microelectronic units are not necessarily ICs.

TeKct 1.2 b

*

IlepeBeAhTe tckct ycTho (c JiHcTa). Pa6oTa BbinoJiHfleTch nofl pyKobo/icTbom npeno;ia- BaTe.M The Future of iCs

When assessing the future course of ICs, it is customary to projcct another order of magnitude in circuit performance through a continu­ing reduction in the feature size of the devices on chip.

However, at our current level of IC development we must face several pragmatic barriers that will require some degree of research cre­ativity to overcome. For example, the chip complexity is extrapolated to 100,000,000 transistors per chip and beyond.

However, the latest models indicate that the power level of next- generation devices will be on the order of lOmW. Thus, a chip of this extrapolated complexity with these devices would require 1000 watts of input power and a packaging system capable of dissipating such pow­er. Since these small devices would operate at reduced supply voltages, the 1000 watts of input power would require currents on the order of 200 amperes and perhaps greater on a chip that should be less than one square inch in area. This set of conditions would apply only to a high- duty cycle and high-performance design and points out that important complexity/performance trade-offs must occur.

4. YhmTecb aHhotMpoBaTb m pecJjepupoBaTb.

Tbkct 1.3 B

a) IIpoMHTaftTe tckct. BusiBHTe ocHOBHyK) MucJjopManMio Kaj^aoro a63ana. 3anH- iiiHTe HHcJjopMauHio Ha pyccKOM H3biKe (5—6 npeano>KeHHft). IIpoBepbTe b ay^n TOpHH npaBHJlbHOCTb llOHHMaHHJI.

5) IIpoHHTanTe tckcteme pa3 h cocraBbTe KpaTKHft pe(J)epaT Ha aiirjiHticKOM «3bi- Ke. (Diarojibi-cKa3yeMkie — ochobiioc cpe^cTBo BbipaweHHsi micJjopMauHH.) Hc- noJiwyfiTe Ciie/iyioiuHe peweBuc 0Tpe3Kn:

... briefly surveys...

... is wide...

... are monolithic IC and film circuits...

... is an extension of...

... are made by forming ...

... are mounted side by side ...

... are combinations of...

Integrated Circuits

The potential of integrated circuits is so wide that in addition to replacing similar discrete component circuits they are responsible for creating a completely new technology of circuit design.

There are two basic approaches to modern microelectronics — monolithic integrated circuits and film circuits.

In monolithic lCs all circuit elements, active and passive, are simultaneously formed in a single small wafer of silicon. The ele­ments are interconnected by metallic stripes deposited onto the oxi­dized surface of the silicon wafer.

Monolithic IC technology is an extension of the diffused planar process. Active elements (transistors and diodes) and passive elements (resistors and capacitors) are formed in the silicon slice by diffusing impurities into selected regions to modify electrical characteristics, and where necessary to form p-n junctions. The various elements are designed so that all can be formed simultaneously by the same se­quence of diffusions.

Film circuits are made by forming the passive electronic com­ponent and metallic interconnections on the surface of an insulation substrate. Then the active semiconductor devices are added, usually ■n discrete wafer form. There are two types of film circuits, thin film ^and thick film.

In thin film circuits the passive components and interconnec­tion wiring are formed on glass or ceramic substrates, using evapora­tion techniques. The active components (transistors and diodes) are plicated as separate semiconductor wafers and assembled into the

circuit.

Thick film circuits are prepared in a similar manner except that the passive components and wiring are formed by silk-screen tech­niques on ceramic substrates.

There can be many instances where the microelectronic circuit may combine more than one of these approaches in a single structure using a combination of techniques.

In multichip circuits the electronic components for a circuit are formed in two or more silicon wafers (chips). The chips are mounted side by side on a common header. Some interconnections are includ­ed on each chip, and the circuit is completed by wiring the chips to gether with small diameter gold wire.

Hybrid IC’s are combinations of monolithic and film techniques. Active components are formed in a wafer of silicon using the pla­nar process, and the passive components and interconnection wiring pattern formed on the surface of silicon oxide which covers the wafer, using evaporation techniques.

5. YhmTecb roBopuTb.

12. IfeJKUKHTe (ycTHo) KpaTKoe co/iepwaiwc o/ihoh noflTCMbi ocHOBHoro TeKcra. II<WOTOBKa —10 MHnyT. Ka^AMtic'iyaeHTHajiaraeTcoAepxaHHeBTe'ieHHe 1 mh- HyTbi (5—6 npcaJioKeHHH). TeMa cooGmeHHH: “Electronics Began with the Development of the Transistor”. Hcnojib3yfiTe cjiejjyiomHC KJimue:

1. The evolution of electronic technology began with ...

2. The advantage of the transistor was...

3. Early transistors were ...

4. The microelectronic technology has shrunk transistors ...

5. The performance benefit stems from ...

6. The chip density increase ...

BHeayAmTopHafl pa6oTa

1. Ri0flr0t0BbTecb k kohTpo/ibHoMy nepeBoay ocHobHoro TeKcTa

I IpOMHTaHTe nOBTOpHO OCHOBHOft TCKCT. OtWOTOBbTeCb K BblGopOMHOMy OnpOC.V nepeBOiia.

2. IIpoBepbTe, 3HaeTe jim Bbi HOBbie c/iOBa ocHOBHoro TeKCTa. PeKOMeuoyeTCfl Hcr0Jib30BaTb ynpa^HCHHH 1.6; 1.7; 1.8; 1.16; 1.17; 1.18.

3. ynMTecb nepeBOflMTb.

TeKct 1.4 b

[jepeBeAHTe tckct nncbMenno co cjioBapeM. BpeMfl nepeBO/ia — 25 mhiiyt.

Integrated Circuit Development

Three factors have contributed to the rapid development growth in the number of circuit elements per chip.

One factor is improvement in techniques for growing large single crystals of pure silicon. By increasing the diameter of the wafers — the discs of silicon on which chips are manufactured — more chips can be made at one time, reducing the unit cost.

Moreover, the quality of the material has also been improved, re­ducing the number of defects per wafer. This has the effect of increas­ing the maximum practical size of a chip because it rcduces the prob­ability that a defect will be found within a given area. The chip size for large-scale integrated circuits has grown from less than 10,000 square mils (thousandths of an inch) to 70,000.

A second factor is improvement in optical lithography, the pro­cess whereby all the patterns that make up a circuit are ultimately trans­ferred to the surface of the silicon. By developing optical systems ca­pable of resolving finer structures, the size of a typical transistor, as measured by the gate length, has been reduced from a few thousandths of an inch in 1965 to 0.15 microns today.

Finally, refinements in circuit structure that make more efficient use of silicon area have led to a hundredfold increase in the density of transistors on the chip.

2. YHMTecb pe$epnpoBaTb TeKCT.

TeKct 1.5 b

^a) ripoHHTaftTe TeKCT. BusiBHTe ocHOBtiyio HH<}>opMaiufio Kaxgioro a63aua. 3anw- uiirre AaHHyio MH<|>opMauHio Ha pyccKOM H3biKe. IIpoBepbTe npaBHJibHocTb nonn- MaHHU.

6) OpoMn raHTe eme pa3 tckct h cocTaBbTe KpaTKHft pcc^par Ha aHnnifftcKOM Jttbi,

Ke. IIcno.ib3yHTc cjie/iyiomyK) cxeMy:

1. The author examines .

2. He considers ..

3. Details are given ...

4. The consequence of the development...

Integrated Circuits: a Brief History

The semiconductor industry can trace its roots back to the inven­tion of the first semiconductor transistor by William Shockley, John Bardeen, and Walter Brattain at Bell Labs in 1947. Their crude device was assembled from a small piece of germanium, some gold foil, a pa per clip, and several pieces of plastic. Though crudely constructed, it performed its function of using a voltage to switch an electrical current on or off quite well. This simple device is the parent of all of the vari­ous semiconductor transistor devices produced over the years, includ­ing computer microprocessors, memory chips, and solid state power amplification circuits.

The new transistor found a home in a number of markets where it could replace bulky and troublesome vacuum tubes (radios and tele­visions), and it created new markets that were invented specifically to exploit its use. The discrete transistor was quickly incorporated in everything from telephone equipment to pocket-sized transistor ra­dios. It is interesting to note that the size of the parts in these early discrete devices were of the order of tenths of an inch. By the late 1950s, the discrete transistor market was worth an estimated $ 1 bil lion annually.

The next major step in semiconductors was the invention of the first monolithic integrated circuit by Jack Kilby and Robert Noyce in 1960. Their integrated devices consisted of many solid-state tran­sistors that were manufactured and interconnected internally on a single semiconductor substrate. The typical minimum feature size in these early products was greater than 20 mm, significantly smalle^f than some of their discrete transistor counterparts. The ability to in­terconnect the devices internally allowed more complex functions to be performed by a single device. Interconnection also made it possi' ble to pack a larger amount of function into areas far smaller than ^possible with discrete transistors. It was the invention ofthe ‘‘in­tegrated circuit” that ushered in the modern microelectronics era, and it is still adaptations of that basic product that fuel the semicon­ductor industry.

• 5. YHMTeCb rOBOpMTb.

noOTOTOBbTe BucTynJieHHe no TeMe: “Integrated Circuit Development” (MaTepwaJioM Koryr cJiy5KHTb TeKCTbi 1.4 B m 1.5 B). BbicrynJieHHe paccmrraHo Ha 2 MMiiyrbj. Hc- nojiwy^Te cJie;jyiomHe KJimne:

1. The paper attempts to provide ...

2. ... are discussed briefly.

3. The author consider...

4. Early transistors were ...

5. Microelectronics development has solved ...

6. Integrated circuits provide ...

7. Integrated electronics will develop ...

TpeTbE 3ahhthe KoHTporib m3yneHHoro MaTepnana

1. KoHTponb nepeBOAa 0CH0BH0r0 TeKCTa.

Pa6oTa paccMHTaHa Ha 15 mhhjt. BbinojjHHeTCH ycmio, BbiGoponHo.

2. KoHTponb cjiob b cnoBoconeTaHMHX.

*

Bbino.iHHeTcn ycTHO hjih iwcbMeHHo no Bbi6opy npenoAaBaTejia.

3. KoHTponb yMeHMw BbmBnnTb 3HaneHM« cjiob c yneTOM koh- TeKCTa.

12. IlepeBcjuiTe npcAiio^ceiiHH, o6paman BHHMamie Ha Bbi6op 3iiaHeHHH bu^cjicu- HbLX CJIOB B 3aBHCHMOCTH OT KOHTeKCTa:

1. Optical lithography has been the leading integrated circuit pattern defining technique for many years.

2. In the narrow sense, pattern recognition means the classification of a given unknown pattern into a number of standard classes. In broad sense, pattern recognition means sciense analysis.

3. Electron beam changes physical characteristics of exposed resistor so that after chemical etching pattern is left on clear substrate.

4. Finished substrate may contain 10,000 mask patterns.

5. The amount of work done in moving one coulomb of electricity from one point to another is a measure of the potential difference between these two points.

6. The principles involve preparing detailed plans and careful monitoring.

7. The circuitry and software involved can be standardized.

8. Plasma etching involves the use of a glow discharge.

9. This work has involved the contributions of many people.

4. KoHTponb yMeHMH nepeBOflMTb c nwcTa.

Tekct 1.1 C

FlepeBC/iHTe tckct ycTiio c JiHCTa.

Integrated Electronics

Integrated electronics is a field so new and so fast changing that many interested people have difficulty keeping up with its day-to-dav

Tpeibe aaujnne 83

The essence of integrated electronics is batch (napTHH; rpynna) processing. Instead of making, protecting, testing and assembling in­dividual (or discrete) components one at a time, large groupings of these components together with their interconnections are made now, ajl at a time. The resulting new endity, or “integrated component”, therefore, is an assemblage of old-style components interconnected into circuits, networks, or even subsystems. Hence, for a given system function the number of separate components have been greatly reduced, while system capability has been greatly increased.

Integrated electronics will develop further. First, the efforts are be­ing made to get more and more circuit functions on slice of silicon which means cramming (pa3Mememie) even more circuit elements into still smaller areas. Second, integrated electronics will move not only towards more functions per slice, but toward new types of functions.

5. KoHTpo/ib yMeHkm nucbMeHhOro nepeBOfla.

Tekct 1.2 C

nepeee^HTe tckct nHCbMCHHo co cjioBapeM.

Getting Nano wired

The heart of a computer is a finger-nail-sized chip or integrated circuit, that includes transistors, diodes and other devices that can manipulate electrons.

To keep up with the demand for faster and more powerful com­puters, engineers have had to squeeze more circuitry onto the chip.

In conventional chip fabrication scientists slice a block of silicon

«

toto thin wafers. Then, with a series of steps that modifies the silicon by etching it away or depositing materials on top of it, they create tiny complex circuitry.

Under the microscope, the result can look like a dense metropo­lis* Intel’s newest chip, the Pentium 4, holds roughly 42 million tran- ^Slstors, with each transistor spanning roughly 130 nanometers (nm).

That’s not an easy or unexpensive accomplishment. Each addi. tional level of miniaturization has added to the chip makers’ expenses

It costs at least $2 billion to build a chip-manufacturing plant today

Moreover, at a certain point of miniaturization, quantum laws take over and prevent devices from working according to the classical laws of physics that govern the operation of conventional chips.

6. KoHTponb yMeHma aHHcroipoBaTb m pec£epnpoBaTb. TeKct 1.3 c

IIpo*Hfrattre tckct h Kpaixo Hxioxofre ero coaepxaHHe ua pyccKom aibiKe. QjamaBbTe ero.

As more ways are found to jam circuitry onto silicon chips, a new barrier to smaller and faster computers is emerging. The plastic or ce­ramic package that carries electrical signals on wires in and out of the chip is still bulky — sometimes 20 times as big as the chip.

One solution, promoted by National Semiconductor Cooperation and others, is tape automated bonding. Instead of the wires and prongs (uiTbipb) now used to connect chips, connections are etched into coo­per foil. These connections are five times closer together than the prongs are. IBM has tried abandoning chip packages altogether, connecting the chips directly to a surface containing multiple levels of wiring.

TeKct 1.4 c

ripoqHTaflTe tckct. CKajKHTe Ha annuHficKOM fl3biKe, hto Bbi y3naJiH: a) 06 electronic industry h films; 6) o zigzag pattern h capacitance.

BapHaiiT i

Even before the invention of the transistor the electronics industry had studied the properties of thin films of metallic and insulating mate­rials. Such films range in thickness from a fraction of a micron, or less than a wavelength of light, to several microns. (A micron is a millionth of a meter; the wavelength of red light is about 7 micron.)

BapHaHT 2

A typical thin-film resistor consists of a fine metal line only a few thousands of an inch wide and long enough to provide the do*

_sired ^val^ue of resistance. If high precision is required, laser-trimming j_S used. If high values are desired, the line can be laid down in a zigzag pattern. To form a capacitance one can lay down a thin film of insu­lating material between two thin films of metal.

7. KoHTponb yMeHMfl cnyiuaTb m roBopnTb.

I 21. OTBeTtre pa3BepHyro Ha cjiez^yiomue Bonpocbi:

1. What were the most important facts for the development of elec­tronics? microelectronics?

2. Why could not early transistors satisfy the needs of the growing high­speed computers industiy and microwave communication systems?

3. What is the major difference between electronic systems and mi­croelectronic devices?

1.22. H3JIOJKMTC KpaTKo cojiepxaHHe ociiOBiioro TeKCTa Ha anr.iHHCKOM tnbiKe. Oc- MOBHafl TeMa cooGmeiiHfl: ^w Electronics Began with the Development of the Transistor”. Hcnojib3yfiTe cjieayiomHe KJiHiue:

1. The author examines...

2. The evolution of (integrated circuits) must begin with the devel­opment of...;

3. In the broad sense (an integrated circuit) is a combination of...;

4. As (chip density) increases ...;

5. The (circuit density) begins ...;

6. Details are given of...;

7. In summary, (the integrated circuit) offers ...

1*23. IToCTBepAifre hjih onpoBepniirre nponio3bi o pa3BHTHH ajieKTpoHHKH, BbicKa3an- Hbie cneuHaJiHCTaMH b 70-e ro/ibi. Hcnojib3yirre cjieAyioniHe BbipawenHH:

That’s not an easy or unexpensive accomplishment. Each addi, tional level of miniaturization has added to the chip makers’ expenses

It costs at least $2 billion to build a chip-manufacturing plant today

Moreover, at a certain point of miniaturization, quantum laws take over and prevent devices from working according to the classical laws of physics that govern the operation of conventional chips.

6. Komponb yMeHWi aHHcmipoBaTb h pecfrepupoBaTb. TeKct 1.3 c

I IpoHHrattre tckct h Kpaixo Hxioaorre ero cojepKaHHe Ha pyccKom jowxe. OwJiaBbTe ero.

As more ways are found to jam circuitry onto silicon chips, a new barrier to smaller and faster computers is emerging. The plastic or ce­ramic package that carries electrical signals on wires in and out of the chip is still bulky — sometimes 20 times as big as the chip.

One solution, promoted by National Semiconductor Cooperation and others, is tape automated bonding. Instead of the wires and prongs (uiTbipb) now used to connect chips, connections are etched into coo per foil. These connections are five times closer together than the prongs are. IBM has tried abandoning chip packages altogether, connecting the chips directly to a surface containing multiple levels of wiring.

TeKct 1.4 c

ripoMHTaflTe TeKCT. CKawHTe Ha anrjiHHCKOM fl3biKe, hto bu y3Hajin: a) 06 electronic industry h films', 6) o zigzag pattern h capacitance.

BapnaHT1

Even before the invention of the transistor the electronics industry had studied the properties of thin films of metallic and insulating mate- rials. Such films range in thickness from a fraction of a micron, or less than a wavelength of light, to several microns. (A micron is a millionth of a meter; the wavelength of red light is about 7 micron.)

BapHaHTI

A typical thin-film resistor consists of a fine metal line only a few thousands of an inch wide and long enough to provide the de" $ired value of resistance. If high precision is required, laser-trimming j_Sused. If high values are desired, the line can be laid down in a zigzag pattern. To form a capacitance one can lay down a thin film of insu­lating material between two thin films of metal.

7. KoHTpo/ib yMeHMH cnyiuaTb m roBopuTb.

12. OnieTbTe pa3BepHyTO Ha cjiejjyiomHe Bonpocbi:

1. What were the most important facts for the development of elec­tronics? microelectronics?

2. Why could not early transistors satisfy the needs of the growing high­speed computers industry and microwave communication systems?

3. What is the major difference between electronic systems and mi­croelectronic devices?

12. IfelOMHTe KpaTKO COAepjKUHMe OCHOBHOro TeKCTa Ha atHJlHHCKOM H3bIKe. Oc- HOBHan TeMa cooCmeHHH: “Electronics Began with the Development of the Transistor”. McnoJib3yfiTe cjieaywiiuie KJiHiue:

1. The author examines ...

2. The evolution of (integrated circuits) must begin with the devel­opment of...;

3. In the broad sense (an integrated circuit) is a combination of...;

4. As (chip density) increases ...;

5. The (circuit density) begins ...;

6. Details are given of...;

7. In summary, (the integrated circuit) offers ...

1-23. IIo/rrBepflHTe hjih onpoBeprHHTe nporH03bi o pa3BHTHH aiieicrpoHHiai, BbicKa3an- Hbie cneuna.iHCTaMH b 70-e roAbi. HcnoJib3yfiTe cjieAyiouiHe Bupa*eHH»:

1. As far as I know. 5. Intensive efforts have been devoted to .

2. To my knowledge... 6. The efforts continue in the direction of...

3. For all I know ... 7. It appears that the (process) will...

4. To sum up...

1- Further developments in thick and thin circuits will extend the range of values achievable using deposition and evaporation tech­niques, although some applications may still require “pellet” type components.

2. Hybrid microwave devices will decrease in importance as tru_e microwave integrated circuits become more economical.

3. The use of an electron beam instead of a light beam in the photo­graphic process will result in integrated circuits with vastly in~ creased numbers of functions per chip.

4. Materials other than silicon will be used, and other phenomena and structures besides junction barriers formed by p and n impuri­ties can be considered.

j

1.24. 1. AaftTe onpe^eJienne thiiob HHTeipaJibHUX cxeM.

2. OGcyujiTe npo&netvibi Hcn0Jib30BaHh*I nojiynpoBoahhkob.

3. 06Cyzurre npewviymecTBa mhKpoarceKTpOhhkh.

4. PaccKawHTe 06 3Jieinpoinibix KOMnoHeirrax, Hcno;ib3yH CTpyKTypHo-jion«ec- Kyio cxeMy:

PA3AEA BTOPOH

QdioeHou meKcm: Semiconducting Materials Engineering Progress.

fpujHjHamuHec/cue xe/ienum Tnnbi npaBoro onpexieneHHH. Cnoco6bi hx

nepeBoaa.

riepeBOA cjiob one, ones, that, those, it.

JlencmecKue xe/ienux: KomeKCTyajibHoe 3Ha4eHHe cjiob maintain,

turn.

IlepeBoji cjiob c npe(J)HKca\fH sub-, super-, over-, under-, semi-.

Iiepboe 3ahm I me

Pa6oTa b ayflMTopmi

1. flpoBepbTe, 3HaeTe jim Bbi cneflyK>mne cnoBa.

C.IOBa, HMeiOIUHC OAHHaKOBUH KOpeHb C pyCCKHMH CJIOBaMM

2. YhmTecb nepeBoamTb.

   1. 03HaKoMbTecb c thiisimh npaBoro onpe/ieJieHHfl cymecTbhTejibHoro h nepeBe/mTe hx (BbinOjiHfleTCfl ycTHo).

A^r/... +Ved... + V

1. The state of art influenced by the development was...

2. The prediction followed by the change of the pattern can help...

3. The event faced by the designers was...

4. The wire joined completes...

N¹... + Ved... +prp + V¹

1. The capability relied upon is reached ...

2. The technique referred to in the paper responds...

3. The benefit called for can be achieved ...

4. The array thought of points out that...

N¹ + Vio pass + V¹

1. The concept to be referred to evolves ...

2. The point to be reached exceeds...

3. The mode to be considered stems from ...

4. The reliability to be achieved reaches...

N¹ +Adj + enough + Vto + V¹

1. The impetus strong enough to give rise to the development is ...

2. The shift large enough to be considered was ...

3. The vehicle heavy enough to handle the load is...

4. The shrink small enough not to be considered was...

Num + (N) +Adj+ V¹

1. The shrink 5 cm long is marked ...

2. The unit 4 m high was used for...

3. The film 1 mm thick is used ...

N‘ + Adj (THna available) + V¹

1. Improvement available is...

2. Performance necessary can ...

3. Chip area present is...

4. Technology similar to the previous one is...

5. The shift possible is used ...

N⁴ + in / under + N⁵ + V⁶

1. The prediction in question gives ...

2. The event under consideration shows...

3. The vehicle in operation reaches...

4. The pattern in use marks...

5. The chip under development provides...

N' + Ving+N⁷

1. The wire linking the ends was...

2. The benefit predicting the result fits...

3. The reliability concerning the device points ...

N⁷ + Ved + V¹

1. The dimension required is responsible for...

2. The concept produced fits ...

3. The response achieved is ...

1. BbiHBHTe onpe^enHTejibHbie 6jiokh cymecTBMTeJibHoro c npaBbiM onpe/iejienHeM. [IepeBe/ufre npejLioJKeima, Hcxo/m H3 <j>yHKUHH cjiob hjih 6jiokob b npe/yiojKeHMH:

1. The high level of control of film thickness and resistivity unifor­mity required has led to the study of the kinetics of the deposition.

2. Time delay associated with the interconnection is dependent on two parameters.

3. The markedly different growth rate observed implies that gas phase equilibrium is not established.

4. Too much time spent in synchronization can diminish the bene­fits of parallel processing.

5. Different kinds of parallel processing software may permit syn­chronization to be achieved.

6. The member of lanes affects the speed at which traffic can move.

3. HaftflHTe h nepeBeAHTe peneBbie 0Tpe3KM, b KOTopux cjioBa one(s), that h those HBJuiioTCJi 3aMecTHTe,i«MH cymecTBHTejibHoro.

One, ones

5. one single crystal

6. one of the benefits

7. not a static field but a dy­namic one

8. not a special acceptor but a ^ * ^comPlete ones

2. one may make an effort

3. one can predict

12. applicable ones

13. Two small computers often cost less than one large one.

that, those

1. is like that of a substrate

2. is much more than that pro­duced recently

3. is lower than that provided by the new technique

4. are more beneficial than

those of the new pattern

4. B cnejjyiomHX npe;yu)}KeHHHX it He nepeBO/ufrcsi. 06t.«chhtc npHMHHy. IlepeBe- jiHTe.

1. It was necessary to increase the functions of the device.

2. It is apparent that low power consumption is of importance.

3. It was the development of the transistor that changed the picture

4. It is known that the transistor had an advantage over the best vac­uum tubes.

5. It appears that the object of the research is significant.

6. Latency (3aaep>KKa) is the time (in seconds) it takes to place a message on the interconnect.

7. Parallel database technology can make it possible to overcome memory emits.

Ochobhom tekct

1. IIepeBe,flHTe ycTHo c jiucra ncpByio «iacTb ocHOBHoro rencra (I) no# pyKOBOji- ctbom npenonaBaTejifi.

JC (integrated circuit) — HHTerpajibHaa VLSI (very large-scale integration) —

cxeMa, MC cBepx6o;ibiijaH MC, BMC

JVlOS (metal-oxide semiconductor) cTpyKTypa McTa^Ji-oKCH.a~no;iynpo- boahhk, MOn-cTpyKTypa

Semiconducting Materials Engineering Progress

1. In microelectronics, the steady reduction of IC feature sizes^l, accompanied by high current densities and increasing demands of elec­trical performance, has focused the attention of technologists on new­er materials which exhibit⁸ characteristics such as low contact resis­tance, reduced vulnerability⁹ to electromigration, and processibility⁴ at low temperatures.

Over the years, the device size has been reduced tremendously. Improvements available⁵ in materials technology have allowed inte­gration of more and more devices on the same chip resulting in in­creased area. According to the theory of scaling, the smaller dimen­sions of a MOS transistor should enhance⁶ its speed. This should proportionally increase the circuit speed. Indeed, for smaller circuits it does happen. However, for large circuits, the time delays⁷ associated with the interconnections can play a significant⁸ role in determining⁹ the performance of the circuit.

As the minimum feature size is made smaller, the area of cross section of the interconnection also reduces. At the same time a higher integration level¹⁰ allows the chip area to increase, causing the lengths ofthe interconnections to increase. The net¹¹ effect of this “scaling of interconnections” is reflected into an appreciable¹² RC time delay. For a very large chip with extremely small geometries, the time delay asso­ciated with interconnections could become an appreciable portion of the total time delay, and hence the circuit performance could no long­er be decided by device performance.

Thus, as the chip area is increased and other device-related¹³ dimensions are decreased the interconnection time delay becomes significant compared to the device time delay and dominates the chip Performance. These are dominant factors limiting device perform­ance.

Performance is the obvious goal of VLSI; reliability is a more sub­tle¹⁴ one. Therefore, new materials are required for VLSI intercon­nections.

The design¹⁵ of any machine or a device has always been limited by the materials available. The problem in question was that materials could be designed and tailored ¹⁶ for any new structures.

Semiconductors are used in a wide variety of solid-state devices including transistors, integrated circuits, diodes, photodiodes and light- emitting diodes.

Several elements in and around group IV of the Periodic Table show intrinsic¹⁷ semiconductor properties but of these Ge and Si (and to a lesser extent Se) alone have shown chemical and electrical prop­erties suitable¹⁸ for electronic devices operating near room tempera­ture.

Germanium and silicon were the first semiconductor materials in common¹⁹ use.

A great contribution²⁰ to the study of semiconductor physics has been made by the prominent Soviet scientist A. F. YofTe. It was in 1930 when Academician A.F. Yoffe and his co-workers started a systematic research in the field of semiconductors.

The diffusion theory of rectification²¹ on the boundary of the two semiconductors was elaborated by B. I. Davydov, a Soviet physicist, in 1938. Experimental support of his theory was of great importance in the investigation of processes occurring²² in p-n junctions.

Right after (xaK pa3 nocjie) World War 11, physicists John Bardeen, Walter Brattain and William Shockley, and many other scientists, turned²³ full time to semiconductor research. Research was centered on the two simplest semiconductors — germanium and silicon.

Experiments in question led to new theories. For example, Will­iam Shockley proposed an idea for a semiconductor amplifier²⁴ that would critically test the theory. The actual device had far less amplifi­cation than predicted. John Bardeen suggested a revision theory that would explain why the device would not work and why previous exper­iments had not been accurately foretold by older theories. In new ex- periments designed to test the new theory they discovered an entirely new physical phenomenon — the transistor effect. In 1948, W. Shock­ley patented the junction transistor. Junction transistors are essentially

solid-state devices having three layers of alternately²⁵ negative or pos­itive ty e semiconductor material.

The early history of modern semiconductor technology can be traced²⁶ to December 1947 when J. Bardeen and W. Brattain observed transistor action through point contacts applied to polycrystalline ger­manium. Germanium has become the material in common use. It was realized that transistor action occurred within the single grains²⁷ of polycrystalline material.

G. Teal originally recognized²⁸ the immense²⁹ importance of single-crystal semiconductor materials as well as for providing the physical realization of the junction transistor. G. Teal reasoned³⁰ in 1949, that polycrystalline germanium’s uncontrolled resistances and electronic traps³¹ would affect³² transistor operations in uncon­trolled ways. Additionally³³, he reasoned that polycrystalline mate­rial would provide inconsistent product yields and thus be costly. He was the first to define chemical purity³⁴, high degree of crystal perfection³⁵ and uniformity of structure as well as controlled chem­ical composition (i. e. donor or acceptor³⁶ concentration) of the single-crystal material as an essential foundation for semiconduc­tor products.

The next decade witnessed³⁷ the “universal” semiconductor ma­terial, silicon. Silicon gradually gained³⁸ favour over germanium as the “universal” semiconductor material.

Silicon is to the electronics revolution what steel was to the in­dustrial revolution.

2. Silicon has been the backbone (ocHOBa) of the semicon­ductor industry since the inception of commercial³⁹ transistors and other solid-state devices.

The dominant role of silicon as a material for microelectronic circuits is attributable⁴⁰ in large part to the properties of its oxide.

Silicon dioxide is a clear glass with a softening⁴¹ point higher ^an 1,400 degrees C. If a wafer⁴² of silicon is heated in an atmo­sphere of oxygen or water vapour⁴³, a film of silicon oxide forms on rts surface. The film considered is hard and durable⁴⁴ and adheres^{45 We}H. It makes an excellent insulator. The silicon dioxide is particu­larly important in the fabrication of integrated circuits because it can ^ac* as a mask⁴⁶ for selective introduction of dopants⁴⁷.

Silicon’s larger band⁴⁸ gap⁴⁹ permitted⁵⁰ device operation at higher temperatures (important for power devices) and thermal oxidation of silicon produced a non-water-soluble stable oxide (as compared to germanium’s oxide) suitable for passing p-n junctions, serving as an “impermeable⁵¹ diffusion mask” for common dopants, and as insula­tor coating⁵² for conductor overlayers⁵³.

Oxygen concentration present influences many silicon wafer prop­erties, such as wafer strength, resistance to thermal warping (cKa40K), minority carrier lifetime and instability in resistivity.

The presence of oxygen contributes to both beneficial and detri­mental⁵⁴ effects. The determental effects can be reduced if the oxygen is maintained⁵⁵ at less than 38 ppms. Thus, the oxygen range⁵⁶ of the wafer present should be controlled. The results achieved with silicon are great.

However, although the silicon wafer clearly is a fundamental in- gradient in the fabrication of an integrated circuit, the silicon materi­als specification⁵⁷ may not be critical element in developing a success­ful new IC product strategy.

Large-scale integration (LSI) of devices has put great demands on electronic-grade single-crystal material. The semiconductor indus­try now requires high purity and minimum point-defects concentra­tion in silicon in order to improve the component yield per silicon wafer. These requirements have become increasingly stringent⁵⁸ as the tech­nology changes from large-scale integration (LSI) to very large-scale integration (VLSI) and very large-scale integration (VLSI) to very high speed integrated circuits (VHS1C).

The yield (or circuit performance) of a device and the intrinsic and extrinsic materials properties of silicon are interdependent. The silicon wafer substrate must be practically defect-free when the active device density may be as high as 10 to 10 per chip.

To increase further the speed of semiconductor devices requires not only refinements⁵⁹ in present designs and fabrication techniques, but also new materials that are inherently⁶⁰ superior to materials pres­ently being used, like germanium and silicon. New material under con­sideration is gallium arsenide.

Gallium arsenide has a much higher electron mobility than ger­manium and silicon. The opportunities⁶¹ present are as follows: it is

potentially much faster; it has a larger band gap, permitting operation _at higher temperatures; it is chemically and mechanically stable. Mo­bilities in this high-purity gallium arsenide are about twice those of germanium and four times those of silicon.

The potential of high-purity gallium arsenide was first explicit⁶² in a new gallium arsenide-germanium hetero-junction diode. The het­ero-junction device has a potential for much faster switching than con­ventional⁶³/?-/] junction diodes. Its calculated switching time is of the order of a few picoseconds (trillions of a second).

However, the difficulty of producing gallium arsenide of sufficient⁶⁴ purity has limited its application.

Yet, gallium arsenide is far from the end of the story. Any search­ing for an answer makes contributions. This is the way of developing better materials and devices.

3. IIpoBepbTe, KaK Bbi 3ariOmhMnM cnoBa nepBoti nacTm ochob- hofo TeKcTa.

5. IlepeBeAHTe Bbiaejiemiue c;ioBa/cjioBocoMeTaHMfl, hcxo/w H3 3HaMeHHM, npHBe- Acnnbix b CKoGkax:

1. density n (ruiOTHOCTb), dense a

2. vulnerability n (yH3BHMOCTb), vulnerable a

3. processibility n (o6pa6oTKa), process v

4. interconnection n (B3anMOCBH3b), connect v

5. suitable a (npnroAHbiH), suit v

6. contribution n (Bioiaji), contribute v

7. rectification n (BbinpHMJieHwe), rectify v

8. amplification n (ycHJieHHe), amplify v

9. layer n (cjioh), lay v

10. alternately adv (nonepeMeHHo), alter v

11. perfection n (coBepuieHCTBOBaHHe), perfect v

12. purity n (4HCT0Ta), pure a

5. IlepeBeflHTe narojiu, hcxoam M3 3na*ieHHH ccKnueivThjToiimx cymccTBMrejitHUx:

1. delay v (delay n — 3ajiep>KKa)

2. level v (level n — ypoBeHb)

3. feature v (feature n — xapaKTepHCTMKa)

4. turn v (turn n — noBopcrr)

5. Trace V (trace n — one#)

6. reason v (reason n — pa3yM, npHHHHa)

5. IlepeBeAHTe cJieziyiomHe c:ioBa. OSpaTHTe BHHMaHHe na 3naMCHHfl npecJjHKcoB sub— nod, nuo*ce\ superover— ceepx, euuie; under— nuotce h semi— no Ay:

sub-: subdivision n, substructure /;, subcommittee n

super-: superheat n, superstructure n, supernatural a, superfast a

*

over-: ove rgrow v, overwork v, overheat v under-: underproduce v, undergrowv, undercutting/; semi-: semiconductor n, semicircle n, semiannual a

5. nepeBe.iiHTe cjiejiyioiiuie cjioBa, hcxohh M3 3HaMciiHH hx 3htohmmob:

1. unstable a (stable a — ycTOHHHBbiM)

2. unconventional a (conventional a — o6bmHbiii)

3. unlimited a (limited a — orpaHHneHHbiH)

4. uncontrolled a (controlled a — yripaBjmeMbiH)

5. unsuitable a (suitable — nonxoziHmHM)

6. uncommon a (common a — o6bi4Hbin)

7. unlike a (like a — noAo6HbiH)

8. impossible a (possible a — B03M0^<HbiH)

9. imperfect a (perfect a - H^eaJibHbin)

10. impurity n (purity n — MHCTOTa)

11. immobility n (mobility n — noABHXHOCTb)

4. YHMTecb cnyiuaTb m roBopMTb.

5. OTBCTbTe Ha Bonpocbi, HcnoJib3yH HH(})opMauHio ocHOBHoro TeKCTa:

1. What would you say about the steady reduction of IC feature sizes?

2. What has allowed the integration of more and more devices on the same chip?

3. What does higher integration level allow?

4. What are the dominant factors limiting device performance?

5. What limits the design of any machine?

6. Who has made a great contribution to the study of semiconductor physics?

7. What would you say about polycrystalline materials?

8. What is essential foundation for semiconductor products?

5. Ooo6iUHTe HH<})opMamiio, Aannyio b ochobhom TeKCTe. PaccKa^KHTe Ha pyccKOM/ aiirjiHHCKoM H3biKe, hto Bbi o nojiynpoBoAHHKax; 06 yneHbix, pa6oraio-

iii,hx b o6^acTH n0Jiynp0B0AHHK0Bbix MaTepnajioB; o KpewHHH h repMaHHH.

FloMaLuHee 3aAaHMe

1. IloBTopMTe TMiibi npaBoro onpe;ieJiCHH$i cymecTBHTejibHoro, nepeBofl cjiob one, ones, that, those, it h BbinojiHHTe ynpa>Ki{enHfl.

2. li3yHHTe cjiOBa h cjioBoconeTaiiHJ) nepBott nacTH ochobkoto i ckctu

3. IlepcBe/xHTe iiHCbMCHHo co cjiOBapeM BTopyio nacrb ochobhoto TeKCTa. (BpeMfl nepeBo;ia — 60 mmhjt)

BHeayflMTopHan pa6oTa

1. YHMTecb nepeBOflMTb.

5. ITepeBeAHTe ycTHO, yHHTbiBan ocoGchhocth nepeBOfla npaBbix onpeAeJieHHii:

1

1. complex electronic systems to be installed are ...

2. new materials to be used are ...

3. materials to be tailored for new structures are ...

2

1. chips designed for use in military electronic systems are ...

2. a semiconductor amplifier proposed by W. Shockley was pat­ented ...

3. transistor operation affected by electronic trap has...

4. chemical purity influenced by the degree of crystal perfection pro­vides ...

5. uniformity of structure relied upon depends ...

6. a wafer of silicon spoken about is heated ...

3

1. fundamental factors influencing resistor performance are ...

2. a material having a negative temperature coefficient is used ...

^ Eyx

3. copper wire containing the oxide layers is ...

4. a complete circuit typically consisting of 10 to 20 transistors causes...

5. transistor action occurring within a single grain of polycrystalline material shows...

4

1. the way of developing materials

2. an attempt of using impurities

3. the variety of handling the wafer

4. the capability of amplifying the current

5

1. contributions capable to improve are

2. new chips commercially available are ...

3. oxygen concentration influences...

4. insulator coating suitable in the case is...

6

1. the detrimental effects in question can be reduced ...

2. a mask under consideration is attributable to the properties ...

3. conventional p-n diodes in operation offer...

4. the purity in existence makes...

5. Onpe/iejiHTe 3h3mchhh cjiob one, ones, that, those h it, onupaflcb Ha cpe/icTBa hx BbisiBJieHhh, h nepeBeAhTe npezuioxeHHn: one, ones

1. One of the problems has been solved with the help of electronics in space communication.

2. Electronics is not a static field of study, but a dynamic one.

3. One should know gallium arsenide has a much higher electron mobility than germanium and silicon.

That, those

1. To write code that accesses another application, you must instruct VBA to make the objects in the other application available to you.

2. This is a file on your computer where all the objects, methods, properties, constants, and events for that application are defined.

3. You should qualify the type of that in your statement.

4. Now that you have referenced the object library you can create and manipulate objects in that application.

it

1. The X R technology employs a novel trick to get better pictures: it continually monitors audio and video signals.

2. It is protons, atomic nuclei or photons that form ultra-high-ener- gy cosmic rays.

3. A digital pulse can travel 10 times as far through a plastic fibre before it spreads out as much as it does in an equivalent glass fibre.

4. It is difficult to explain how cosmic rays could have crossed such distances to Earth.

5. IlepeBezurre nHCbMchHo co cjioBapeM bTopyio wacTb ocHobHoro Tettcra (BpeMfl nepeBo;ia — 60 mmhjtt).

2. H3yHmTe cnoBa n cnoBOconeTaHMfl ocHobHoro TeKcTa.

(D

1. feature size — pa3Mepbi 3JicvieHTa feature n 1. oco6eHHocTb; cBoficTBo;

2. ilCTajIb, 3J1CMCHT feature v 1. M3o6pa>KaTb, noKa3bmaTb;

2. 6BiTb xapaKTepnoft nepToft

2. exhibit v 1. noKa3biBaTb, npoflB- JlJITb; 2. 3KCnOHMpOBaTb exhibition n 1. noKa3; 2 BbicTaBKa

3. vulnerability n yjBBHMOCTb vulnerable a yfl3BMMbift vulnerable crack — onacHaa TpeuxMHa

4. processibility n B03M0XH0CTb o6pa 6otkm

processing n o6pa6oTKa process n 1. npouecc; 2, cnoco6 process v o6pa6aTbiBaTb processor n nponeccop, o6pa6aTbi- Baiomce ycTpoiicTBo array processor — MaTpMHHbift (bck- TopHbiM) npoueccop word processor — cMCTCMa o6pa6oT- KM TeKCTOB

5. available a 1. /iocTynHbift; hmckj- mMftcji b pacnopflxeHHH; 2. (npn)~ roAHbitt

availability n 1. HajiMMMe; 2. npHronHocTb

6. Enhance V noBbiiuaTb; yBcJiMhm- BaTb; ycMJiMBaTb

enhancement n 1. yBejiMHeHHe, pac- LLIHpCHMe, 2. MOHepHM3aHMfl

7. delay n 1. 3a^epxKa, 3ana3/ibiBa- hmc; 2. 3aMeimeHMc; 3. BpeMfl 3ana3- /IblBaHHfl

delay v 1.3anepxMBaTb; 2. oTKJianbiBaTb delay time — BejiMHMHa BpeMeHHofi 3aiicp)KKM delay updating — 3a^epxcHa« KoppeK- TMpOBKa

delay line — xapaKTep 3ana3.nbiBaHMfl, BpeMCHHa^ 3aaep>KKa phase delay — 3ana3.nbiBaHHe no (J)a3e delayed a 1.3aMemieHHbifi; 2. c 3ancp>K- KOfi

8. significant a BaxHbift; 3HaMHMbin significance n BaxHocTb; 3Ha4CHMe

9. Determine V 1, onpe.NejiflTb, ycTa- HaBJiMBaTb; 2. PcrnaTb; 3.3acTaBJiHTb;

4. OrpaHmmmBaTb

determination n 1. onpe.nejieHMe; pc- meHMe; 2. ycTaHOBJieHHe; 3. M3Me- pcHMe

determinated a 1. onpenejieHHbitt;

2. BblHhcJieHHbltt

determinate — onpeAejieHHbift, 3a- AaHHbii'i

10. level n 1. ypoBCHb, 2. rmocKaji ro- pH30HTajlbHafl nOBepXHOCTb

fixed level — nocTOHHHbift ypoBeHb level a 1. 0AHHaK0Bbift; 2. ropM3c>H- TaJibHbift

level v BbipaBHMBaTb; ypaBHOBeuiHBaTb level down — noHH^KaTb ao ypoBHfl level off — BbipaBHMBaTb, BbinpjiMAHTb

11. net n 1. ceTb; 2. cxeMa, uerib network n 1. cxeMa, uenb; 2. ccTb network congestion — 3aKynopxa ceTM

12. appreciable a3aMeTHbift, owyTHMbift appreciate v 1. oueHMBaTb, ueHHTb;

2, Pa3.NMwaTb appreciably adv 3aMeTHo, 3Ha»jHTejib- ho

13. Device-related — cBfl3aHHbitt c ycT- pOflCtbom

related a CBH3aHHbift; oTHocaiUMttcji relate v cB«3biBaTb; oTHocHTbca relationship n OTHomeHHe device n MexaHH3M, npn6op, ycrpoft- CTBO

14. subtle a 1. tohkmA; 2. ocTpbiii; 3.3d. oneHb HyxHufl

15. design n 1. npoeKT, ruiaH, 2. kohct- pyKUMJi, pa3pa6oTKa; 3. pMcyHOK, 3c- KH3; 4. pacneT

design v 1. npoeKTHpoBaTb, kohct- pynpoBaTb; 2. npenHa3HaHaTb designer n KoHCTpyKTop, npoeKTM- pOBUIHK

computer-aided design — aBTOMaTH3H- poBaHHoe npoeKTHpoBaHMe block design — 6AowHa« KOHCTpyKUna fault-tolerant design — oTKa3oycTott- HHBa5I KOHCTpyKUMfl geometry design — TonoJiorHwecicoe npoeKTHpoBaHne cxeM on-line circuit design — onepaTHBHoe npoeKTHpoBaHHe cxeM option design — npoeKTHpoBaHHe c Bbl6opOM BapH3HTOB

16. tailor v 1. npMcnoca6jiMBaTb, noA- roHHTb, 2. cneunaiibHo pa3pa6aTbi- BaTb; 3. npoeKTHpoBaTb tailor-made a 3apaHee 3aAaHHbifl tailoring/; ruwoHKa, noACTpoftKa field tailoring — noACTpoftKa nojiii

17. intrinsic a 1. npHcymnft, cBoftcTBeH- Hblft; 2. CyiUeCTBCHHblM; BHyTpCHHHH;

2. coScTBe^Hbifi (o63MKmponpoeodHU- kox)

intrinsic equation — npeAonpeAejieH- Hoe ypaBHeHne extrinsic a npHMecHbift (06 3/ieKmpo- npoeodnuKOx)

18. suitable a 1. nojxxoxwmntt, cootbct- cTByiomnft; 2, ro/iHbitt

suit v L yaoBJieTBopHTb TpeGoBaHH- JIM; 2. COOTBCTCTBOBaTb suitability n npnroAHocTb, cootbct- CTBHe

19. common a 1. o6wnft; 2. npocTott, 06biKH0BeHHbift; 3. pacnpocrpaHeH- Hblft

common form — CTaHAapTHan $opMa in common — bmcctc in common with — Hap«^y c commonly adv oGbi'JHo

20. contribution n 1. BKjiaA*. 2. coAeft- ctbmc; ynacTwe; 3. coTpyAHHHecTBo; pa6oTa; 4. craTbH, AooaA contribute v 1. coAeiicTBOBaTb, cno-

co6cTBOBaTb; 2. AeAaTb BKJia/i;

3. NpMhhMaTb ynacTHe, coTpyAhh- naTb

contributor n 1. aBTop CTaTbM; 2. co- AeftcTByiomMH

21. rectification n 1. BbinpflMJieHHe;

2. AeTeKTHpoBaHHe

rectify v 1. BbinpHMJiflTb; 2. AeTeKTH- poBaTb

barrier-layer rectification — BbinpflM- jieHHe Ha oGcahchhom cjioe diode rectification — AM0AH0e AeTeK- TMpOBaHHe rectifier n 1. BbinpflMHTeAb; 2. ahoa

tunnel rectifier — BbinpaMHTejib na TyHHCJIbHOM .UMOJie

22. occur v 1. nponcxo/iMTb, cjiynaTb- ch; 2. npHXO/iHTb Ha yM; 3. BCTpewaTb- ca, nonaaaTbcfl

occurrence n 1. cjiynafi; 2. HajiMHMe;

2. MecTOHaxo^neHMe, pacnpocipa- HeHMe; 4. B03HMKH0BeHHe; 5. Bxoac- ijeHHe

failure occurrence — B03HHKH0BeHHe oTKa3a

23. Turn V 1. O6pamaTbc«, npwGeraTb;

2. BpamaTbCJi; 3. Cocpe/ioTohmBaTb, HanpaBjwTb; 4. NpHbohhTb b KaKoe-ji. CoctojihHe

turn aside — OTidOHflTb(cji)

turn into — npeBpamaTbcn

turn on — BKJiioHaTb

turn off — BbiKJiioⁱiaTb

turn n 1. noBopoT; 2. H3MeHeHMe;

2. OwepeiiHocTb in turn — no o4epe;m

24. amplifier/2 ycHJiHTeJib bulk-effect amplifier — ycHJiHTejib Ha

ocHOBe oGijeMHoro 3(J)cJ)eKTa charge-transfer amplifier—ycwjiHTejib Ha nn3

off-chip amplifier — HaBecHofi (BHern- hmK) ycMJiMTejib on-chip amplifier — ycnjiMTejib Ha o.n- hom KpMCTajuie c iipyroM cxeMott sample-and-hold amplifier — ycHJiH- TeJIb BblGopKM H XpaHCHMfl sense amplifier — ycnjiMTejib CMHTbi- BaHMH

amplify vycHJiMBaTb; yBejiMHMBaTb

25. alternately adv nonepeMeHHO alternate# 1. nepcjjyiomMficji; 2./ipyrofl alter v wepe/ioBaTb; H3MeH5m>cfl alternating a nepeMCHHbm alternating current (AQ — nepeMeH-

Hblft TOK

26. trace v 1. npocjieacMBaTb; 2. npoBo- HHTb JIMHMIO; 3. OTHOCHTb KJ OTHO- CHTb Ha cwet

trace n 1. cjie/i; 2. HC3HaMHTejibHoe KOJIMHeCTBO traccability n: batch traceability — bo3- M02CH0CTb KOHTpojifl nocjie/ioBa- TejibHocTH TexHOJiornnecKOft 06- pa6oTKH napTHH (imacTMH)

27. grain n 1. Kpncrajui; rpaHyjia; 2.3ep- ho; 3. KpynHHKa; 4. bojiokho columnar grain — 3epHO uhjihhuph-

HeCKOft (J)OpMbI grain v 1. rpaHyjiMpoBaTb, KpHCTaji- JiM30BaTbc«; 2. flpoGMTbcn grained A3epHMCTUft, rpaHyjinpOBaH-

Hblft

28. recognize v 1. y3HaBaTb; 2. npH3Ha- BaTb

recognizable a Morymnfi 6biTb y3HaH- HblM

recognition n 1. y3HaBaHHe; ono3Ha- BaHMe; 2. npM3HaHMe character recognition — pacno3HaBa- HMe CHMBOJIOB

29. immense a 1. orpoMHbifl; 2. HeoGt-

HTHblfi

Immensely advoneub, 4pe3BbiliaMHo

30. reason v 1. oGcyac^aTb; paccyac^aTb;

2. Pe3ioMHpoBaTb

reason n npw^HHa; 0CH0BaHHe by reason of — no npMHHHe, H3-3a reasonable a yMepeHHbifi; npneMJie- MblH

reasonably adv c zi0CTaT04HbiM ocho- BaHMCM

31. trap n JioByiiiKa; ueHTp 3axBaTa carrier-trap — ueHTp 3axBaTa hocm-

Tejiett

electron trap — 3JieicrpOHHafl JioBym- Ka, ueHTp 3axBaTa 3JieKTp0H0B trap v 3axBaTbiBaTb

32. affect v 0Ka3biBaTb bjihhhmc, B03- neftcTBOBaTb

affected a HapymeHHbift, noBpexneH- Hblfi

33. additionally flJv^.onojiHHTejibHo additional a aonojiHHTejibHbitt addition/i 1. nonojiHCHne; 2. cjioxeHHe in addition to—AonojiHMTejibHo, Kpo- mc Toro add v npH6aBJiHTb; AonojiHflTb additive n ,ao6aBJieHHC, npHMecb, npncajiKa add-on — yBe/iHweHHe

34. purity n HMCTOTa; 6ecnpHMecHocTb impurity n npHMecb

pure a MHCTbitt, 6ecnpHMecHbiii pure oscillation — cnHycoHnaJibHoe KOJie6aHMe purely adv ncicniOHMTejibHo; nojiHo- cibio; coBepmeHHo, BnojiHc purify voMMiuaTb

35. perfection n 1. 3aBcpmeHHocTb, 3a- KoHHeHHocTb; 2. coBepmeHCTBo perfect a 1.3aKOHMCHHbm; 2. nueajib-

Hblft

perfect v 1. 3aKaH4HBaTb; 2. coBep-

LLieHCTBOBaTb

perfectly adv coBepmeHHo

36. acceptor a 1. aKuenTop, 2. aKuen- TopHan npHMecb

accept v 1. npMHMMaTb; 2. nonycKarb;

cor/iamaTbcfl acceptable a 1. npMHHTbift, ixonycTM- Mbift; 2. M3BecTHbi^, pacnpocTpa- HeHHblH

acceptances 1. npneMKa; 2. corjiame- Hne

accepted a 1. npHHATbin, nonycTM- Mbin; 2. M3BecTHbift, pacnpocTpa- HCHHblH

generally accepted — o6iuenpHHJiTbift

37. witness v 1. 6biTb CBHaerejieM; 2. cbh- flCTeJlbCTBOBaTb

38. gain v 1. no/iyMaTb; npno6peTaTb;

2. yBejiMMMBaTbc«; 3. M3BJieKaTbno;ib- 3y

to gain acceptance — nojiynaTb ripn- 3HaHHC

gain« LyBejiMMeHMe^pHpocT; 2. npn- 6biJib; 3. BbiHrpbiiii; 4. ko3(J)(J)huh- eHT ycHJieHH«

collector-to-base current gain — ko-

3(J)(J)MUHCHT yCMJICHHfl TpaH3HCTO- pa no ToKy b cxeMe c o6iuhm smht- TepoM

current gain — ycnjieHHe no TOKy logic gain — Harpy30MHan cnoco6 HocTb jiorHHecKofi MC speed gain — BWHrpbiiu BSbicrponeft-

CTBHH

gain of control - nojiyneHHe ynpaB- jieHH«

(ID

39. commercials 1. ToproBbift; 2. bh- roAHbin; 3. MMeiomMHC« Ha pbiHKe commerce rx ToproBJiH

40. attributable a npnsacTHbiM; xapaK- TepHblH

attribute n cboKctbo, xapaKTcpHbitt npH3HaK,nepTa attribute v oTHOCHTb; npwnHCbiBaTb

41. soften v pa3MJirnaTb

softs 1. MfirKHM; 2. kobkhA; rn6KMH;

2. HeHHTeHCMBHbift; 4. nporpaM MHpOBaHHbltt software n MaTeMaTHMecKoc o6ecne- MeHHe 3BM

42. Wafer n 1. NojiynpoBOiiHh koBan njiacTmHa; 2. NjiacThhKa; njiaTa; no;I /ioacKa; 3. KpncTajui, mc

bipolar wafer — n/n njiacTMHa c 6nno- JlflpHblMM HHTerpajibHbiMHcipyKTy paMH

building-block wafer — n/n njiacTMHa C C(J)OpMMpOBaHHbIMH KOHCTpyK THBHbIMM 6jlOKaMM customed wafer — n/n njiacTHHacOa- 30BbIMH KpHCTajUiaMM etch-separated wafer — n/n njiacTH- Ha, pa3,ae^«eMan Ha KpncTaJUiax MeTonoM TpaBJieHwn flat-wafer — njiacTMHa c njiocKona- paJliiejIbHblMH nOBepXHOCTHMH

process development wafer — TecTOBafl njiacTMHa, npHMCHfleMaa npn pa3- pa6oTKe TexHOJiorHHecKoro npo- uecca

wafering n pC3Ka n/n cjihtkob Ha njiac- THHbl

wafertrack n aBTOMaTH3HpOBaHHaa cncTeMa o6pa6oTKH n/n njiacTHH, ynpaBJineMafl MHKponpouecco- pOM

43. vapour n nap, napbi

dopant vapour — napbi Jiernpyiomett npHMecH

saturated vapour - HacbimeHHbin nap vaporization n HcnapeHHe; napoo6pa- 30BaHHe

44. durables l.npoMHbitt; 2.HJiHTejib- Hbitt, nojiroBpeMeHHbiH durability n 1. npowHocTb; 2. npofloji-

XMTCJIbHOCTb, CpoK CJiyx6bI duration n nponojDKHTejibHOCTb

45. adhere v 1. npHJinnaTb; 2. npHjjep- >KHBaTbCH nero-ji.

adherence n 1. coenMHeHne, cuenjie- Hne; 2. co6jnoAeHne adhesion n npHJinnaHHe, cuenjieHHc adhesive n 1. KJTen, ajire3HB; 2. aflre3Mfl adhesive join — oeeBoe coenHHeHHe

46. mask n (J)c>T0ma6ji0H, MacKa; Mac- KHpyiomnR cjioft

mask v MacKHpoBaTb deposition mask — ma6iioH hjih (J)Op- MHpOBaHH51 MeTajIJlH3aUHH doping mask — ma6jioH hjih (JjopMH- pOBaHHn JiernpOBaHHbix o6;iacTefi evaporation mask — MacKa win Hanbi- JieHHH

exposure mask 1. (J)OToma6jioH; 2. (J)0- Tope3HCTHbifi MacKHpyiomnR cjioft in situ mask — jroKajibHan MacKa master mask — 3TajioHHbift opnrHHaji (J)0T0iua6ji0Ha metal-on-glass mask — MeTajuiH3Hpo- BaHHblfl (J)OTOlUa6jIOH moving mask — CBo6onHaH MacKa overlaid mask — MacKa Ha n/n njiacTH- He production mask — pa6o4Hft ma6jioH self-aligned mask — caMocoBMemcH- Hwfi ma6jioH maskant n MaTepnaji zurn (JjopMHpo- BaHHH MacKHpyiomero cjion

47. dopant n JiernpyiomaH npHMecb; AH(J)(J)y3aHT

donor dopant — aoHopHaa npHMecb implanted dopant — HOHHOHMnjiaHTH- pycMan npHMecb impurity dopant — JierHpyiomaa npn-

MCCb

spin-on dopant — npHMecb, HaHocH- Man Ha noBepxHOCTb n/n doped a jienipoBaHHbift doper n ycTaHoBKa mm jiernpoBaHMH dope v JiernpoBaTb doping n JiernpoBaHHe

48. band n 1. nojioca nacTOT; 2. JieHTa, TecbMa

band pass filter — nojiocoBbifi (JmjibTp

49. gap n 1. npoMeacyToK, HHTepBaji;

2. npo6cji, nponycK; 3. pa3pbiB, 3a-

30p

band gap — 3anpemeHHan 30Ha direct gap - 3anpemeHHaa 30Ha c npHMbiMH nepexonaMH graded band gap — njiaBHo H3MeHHio- maacji 3anpemeHHan 30Ha mask gap - 3a3op Meatfly (J>oToma6- jiohom h n/n njiacTHHoft proximity gap — MHKpo3a3op

50. permit v no3BojiHTb; pa3peiuaTb permission n pa3pemeHHe permissible a pa3peiuaeMbifl, nonyc-

THMblft

51. impermeable o HcnpoHHiiaeMbift permeate v npoHHKaTb permeable a npoHHuaeMbift

52. coatingn 1. noKpbiTHC, cjioft; 2. Ha- HeceHne noKpbiTHH

dip coating HaHeceHHe noKpbiTHH Me- touom norpyaceHHfl coat n noKpbiTHe, o6ojioHKa coat v noKpbiBaTb, o6iUHBaTb

53. Overlayer n noKpbiTHe, bcpxhhh

CJIOM

layer n 1. cjiom, njiacT; njieHKa; 2, ypo- BeHb

layered architecture — HepapxHHecKaa CTpyKTypa lay v 1. KJiacTb, nojioacHTb; 2. H3Jia- raTb, (JjopMyjinpoBaTb; 3. cocTaB- jifiTb njiaH barrier layer — 3annpaiomHft cjiofi buried layer — CKpbiTbifl cjioft cap layer — repMCTM3MpyiomMft cjiofi evaporated layer — HanbUieHHbifi cjiofi host layer — McxonHbiM cjiofi multiple layer — MHorocjiofiHaa njieHKa registered layers — coBMemeHHbie CJIOH

sandwiched layers — cjiom Tpexcjiofi- hoR cTpyKTypbi supported semiconductor layer — n/n cjioft Ha nonjio)KKe layout n TonojiorMn; pa3pa6oTKa to- nojiorMM

lay out v K0Mri0H0BaTb, TpaccMpoBaTb

54. detrimental a BpeflHbift, Heacejia- TejibHbiR

detriment n Bpen

55. maintain v 1. no/mepxMBaTb, co- xpaHnTb; 2. o6cjiyxMBaTb; 3. nponoji xaTb; 4. yTBep)KjiaTb maintenance n 1. yxon, pcmoht;

2. no;uiepxKa; 3. o6cjiy>KMBaHMe maintenance panel — HHxeHepHbift

nyjibT

maintenance test — 3KcnjiyaTaiiM0H- Hbie HcnbiTaHMW

56. range n 1. pan; uenb; 2. o6jiacTb pacnpocipaHeHM5i; 3. npeiieji,HHana~ 30H; 4. npOTJDKCHHOCTb

range of action — panMyc neftcTBufl range of application — o6jiacTb npn- MeHeHMH range v 1. KJiaccM(J)MUMpoBaTb; 2. ko- jie6aTbcn b npenejiax; 3. THHyTbCH, pacnpocTpaHHTbcn ranging n onpenejieHMe paccTonHMH, MaciuTa6MpoBaHMe

57. specification n 1. cneuM(J)MKauMH, MHCTpyioiMH; 2. nonpo6HocTb specify v 1. tom ho onpejjejiHTb; 2. na-

BaTb cneiiM(J)MKauMK) specific a l.’xapaKTepHbiR; 2. TOHHbift;

2. YuejibHbiR specifically adv 1. Oco6eHHo; 2. Tom- ho; 3. B HaCthoctm

58. stringent a CTporMM, TOHHbifi

59. refinement s 1, ycoBepiiJCHCTBOBa- HMe; 2. oMMCTKa

refine v 1. coBepmeHCTBOBaTb; 2, omm- uiaTb

refined a OHMmeHHbifi

60. inherently adv no cymecTBy; no CBoeft npMpoxie

inherent a npncyuiHft, CBoftcTBCHHbiM inherit v yHacjienoBaTb inherited error — yHacjienoBaHHan omM6Ka

61. opportunity s B03Mo^<HocTb

take an opportunity - B0cn0Jib30BaTb- Cfl B03M0)KH0CTbK)

62. explicit a 1. HBHbifi; 2. npHMofl, hc- nocpencTBeHHbift; 3. no,apo6HbiH be explicit — 3d. hcho npoaBHTbca explicit flow-chart — nonpo6HaH

6jioK-cxeMa explicit function — HBHan (JjyHKunn

63. conventional a 1. o6menpHHHTbiM, 2. CTaHHapTHblH, TMnOBOft; 3, 06bIHHbIH conventional design — 6a30B0e npoeK-

TMpOBaHMC conventional memory — 6a30BaH na-

MHTb

64. sufficient a nocTaTonHbift sufficiently adv /iocTaTOHHO

3. IIpoBepbTe, KaK Bbi 3anoMhMnM c/ioBa.

2.14. 3anHuiHTe nepeBoAAaimbix peneBbix <>Tpe3KOB:

(1-10): the feature ofthe gate; a feature size; to exhibit the pattern; to exhibit the performance; vulnerability to the response; to process the data; the arrangement of the processor; the avail­ability of chips; to enhance the speed; time delay; a signifi­cant prediction; to determine the capability; the level of de­velopment

(11-20): the net effect; to appreciate the feature; an appreciable ex­tension; to contribute efforts; an arrangement suitable for the purpose; a mode in common use; a contribution to the processing

(21—30): to concern the events occurred; to turn full time to research; to amplify the sensitivity; to trace the operation

(31—40): to affect the response rate; to add some points; to achieve the metal purity; the perfection of the rectification; to wit­ness the event; to gain similarity; to be attributable to the emergency

(41-50): a durable mark; to act as a mask; to permit the size shrink

(51—64): an insulator coating of a conductor; to predict detrimental effect; to refer to a conventional state; sufficient purity

2. IS. HaiuHTe b ochobhom tcrctc (nepBas qacTb) aHrjiniicKHe aKBHBajicHTbi cjieflyio- iuhx peneBbix 0rpe3K0B h lanHiuirre hx:

1. nocTOAHHoe yMeHbiueHHe pa3MepoB HC

2. HOBbie MaTepnajibi HMeiOT Taxne xapaKTepHCTHKH, KaK ...

3. ycoBepmeHCTBOBaHHH, .aocTHmyTbie b TexHOJToniH

4. pa3Mepbi TpaH3HCTOpa

5. 3ajiep)KKH no BpeMenw, CBH3aHHbie c ...

6. onpeflejTeHne xapaKTepncTMK cxeMbi

7. Gojiee bmcokhh ypoBeHb HHTerpaunH no3BOJTHeT yBejTMHHTb

8. A0B0JibH0 3HaHHTejTbHafl 3a^ep)KKa no BpeMeHH

9. KOHCTpyKUHH JiioGoro ycTpoiicTBa

10. GojTbmoH BKJiajx b H3yneHMe ...

11. HCCJTe^OBaHHe npoueccoB, nponcxoimiUHX b p-n nepexojiax

12. 4pe3BbiMaHHaa BaxHOCTb nojiynpoBOflHHKOBbix MaTepnajiOB

13. nOCBHTHJIH Bee CBOe BpeMH HCCJieflOBaHHJO nOJiynpOBOJIHHKOB

14. onpe^eiiHTb xhmHnecKyio qncTOTy

3. YHMTecb KpaTKO M3/iaraTb coAepwahme TeKCTa.

16. KpaTko M3Ji0JKHTe coAep>KaHMe ocHOBHoro TeKCTa. IlpH KpaTKOM hsjiojkchmh co- AepwaHHsi TeKCTa Hcno:ib3yHTe cjie^yiomHe peweBbie orpeaiui:

1. ... has focused the attention on ...

2. ... have allowed integration of...

3. ... should enhance the speed ...

4. ... allows the chip area to increase ...

5. ... are required for interconnections...

6. ... show intrinsic properties...

7. ... was centered on two semiconductors...

8. ... has become the proper material...

9. ... gradually gained favour...

BTOPOE 3AHHTHE

Pa6oTa b ayflMTopnn

1. ripoBepbTe AOMaujHee 3aflaHMe.

1. IIpoBepbTe nHCLMCHHblfi nepeBOA BTOpoft MSCTH OCHOBHOro TCKCTa.

2. IIpoBepbTe ynpa^KHCHHfl (bu6opomho).

2. ripoBepbTe, KaK Bbi 3anoMHMnM c/ioBa.

3. YHMTecb nepeBOflMTb.

TeKCT 2.1 B

nepCBCAMTC TeKCT yCTHO (c JIHCTa). 3HaMCHHe Bbl^CJieHIlblX CJIOB Bbl CMOJKCTe JlOHHTb H3 KOHTCKCTa.

GaAs MESFETs Research

Many years have passed since the bipolar transistor was invented by Shockley in 1948. Bipolar technology has highly matured today, and the structure of Si bipolar transistor has been improved almost to its physical limits. The upper frequency limit of its practical application is consid­ered to be 4 Ghz regardless of advances in technology.

In 1966, C. A. Mead demonstrated the possibility of transistor with a very high cut-off frequency employing a GaAs field effect transistor with a Schottky barrier gate. Since then, GaAs MESFET research and development efforts have been made in many laboratories around the world. The main purpose of the development of GaAs MESFET is to obtain three-terminal microwave semiconductor devices which can be used to develop microwave amplifiers to replace the parametric low noise amplifiers and the travelling wave tube power amplifiers.

In the last several years, GaAs MESFETs have made remarkable progress in both low noise GaAs MESFET amplifiers, resulting in a sub­stantial reduction in the cost of microwave communication systems. High power GaAs MES FETs replaced some TWTs, guaranteeing a much long­er lifetime and a smaller size than the TWT.

TeKCT 2.2 B

riepeBeAHTe tckct nHCbMeHHo co c;ioBapeM. 06paTHTe BHHMaHHc Ha nepeBOA Bbue- jictiHbix cjiob. BpeMJi nepeBOAa — 15 mhh>t. IlpoBepbTe nepeBOA b ayAHTopHH.

BapwaHT 1

Speedier Semiconductor Chips

The ongoing microelectronics revolution was ushered in over 50 years ago by the introduction of silicon-based semiconductor chips. The circuits speeds in some advanced computer equipment are now approaching the theoretical limits of silicon, and for many years scien­tists have been experimenting with faster-working alternative materi­als. Harris Microwave Semiconductor, of Milpitas, Calif., recently in­troduced two digital integrated circuits made from one exotic alternative to silicon: gallium arsenide.

Electronic chips made from gallium arsenide have been available in the past, but usually only on a prototype basis. The new Harris chips, both of which are designed for use in sophisticated telecommunica­tion equipment and military electronic systems are the first commer­cially available off-the s/ze^gallium-arsenide 1C chips. The manufac­turer says they work five times faster than the speediest of today’s silicon-based counterparts.

BapuaiiT 2

Silicon and Germanium

The two elements we can now concentrate on, as by far the most important semiconductors, are silicon and germanium. Silicon is one of the most plentiful elements in the world, but occurs in chemical com­pound such as sand (silica), from which it is difficult to extract pure silicon. The element can be isolated by the reduction of silica in an arc furnace. It then contains small quantities of calcium, iron, alumini­um, boron and phosphorous as principle impurities. Alternatively, sil­icon can be prepared by the pyrolytic reduction of silicon tetrachlo­ride and in this way the material can be obtained free from analytically detectable quantities of boron and phosphorus.

Germanium is comparatively rare but it is rather easier to refine. It should perhaps be mentioned that the list of semiconductors given is not confined to elements; increasing attention is being paid to semi­conductor compounds such as indium antiminide and other compounds of group III with group V elements.

3. YnMTecb aHhoTnpoBaTb m pecfrepupoBaTb. TeKct 2.1 c

а) ripoHHTaftTe tckct. BbiflBHTe 0CH0BHyi0 HHtJjopMaumo Kaxtaoro a63aua. 3ann- uiirre AaHHyio MHcJjopMauMio (b Blue no/uiewamero m ero cKa3yeMoro) Ha pyccKOM «3biKe. IIpoBepbTe npaBHJibHocTb noHHMaHHJi TeKCTa.

б) ri poMHTaftTe TeKCT eme pa3 m cocTaBbre KpaTKHft pecJjepaT Ha amviHHCKOM Ji3bi- Ke. HcnoJibsyMTe c.ic^yioiuHe KJiMiie:

The review surveys...

The author shows the advantages of GaAs. They are...

The conclusion is as follows...

Semiconductors as Materials

A semiconductor is a material having a resistivity in the range between conductors and insulators and having a negative temperature coefficient. The conductivity increases not only with temperature but is also affected very considerably by the presence of impurities in the crystal lattice.

Types of semiconductor material commonly used are elements falling into group IV of the Periodic Table, such as silicon or germani­um. The donor and acceptor impurities are group V and group III ele­ments, respectively, differing in valency by only one electron.

Certain compounds such as gallium arsenide (Symbol: GaAs) which has a total of eight valence electrons, also make excellent semi­conductors.

GaAs is a direct-gap III—V semiconductor that has a relatively large band gap and high carrier mobility. The relatively high carrier mobility allows the semiconductor to be used for high-speed applica­tions and because of the large energy gap it has a high resistivity that allows easier isolation between different areas of the crystal. The con-

duction band is a two-state conduction band; some electrons there­fore are ‘hot’ electrons, i.e. they have small effective mass and higher velocity, this resulting in the Gunn effect.

GaAs is difficult to work since diffusion of impurities into the material is extremely difficult. Epitaxy, or ion implantation must therefore be used to produce areas of different conductivity type. The main uses for gallium arsenide have been as microwave devices, such as Gunn diodes or IMPATT diodes, but lately it has been used as a MESFET (a GaAs junction field-effect transistor) for high speed logic circuits.

4. YHMTeCb rOBOpHTb.

16. OTBeTbTe pa3BepHyTO (2—3 npeAJioweitHfl) na cJie^yiomMe Bonpocu:

1. What new possibilities did the advent of the transistor open?

2. Who made a great contribution to the study of semiconductor physics?

3. What is a semiconductor? Name the main properties of semicon­ductors.

4. What do they say about silicon?

5. How does a film of silicon oxide form a wafer?

6. What does oxygen concentration influence?

7. What is a fundamental ingredient in the fabrication of an integrat ed circuit?

8. What are donors?

9. What new material is under consideration?

10. In what way can GaAs compete with germanium?

16. KpaTKO HmoiKHTe coAcpiKatme ocHOBHoro TeKcra. IlpH KpaTKOM M3Jio%eHMH TeK­CTa Mcnoj]b3ytiTe cjie^yKJiUMe peieBbie OTpe3KH:

1. ... has focused the attention on...

2. ... have allowed integration of...

3. ... should enhance the speed ...

4. ... allows the chip area to increase ...

5. ... are required for interconnections ...

6. ... show intrinsic properties...

7. ... was centered on two semiconductors...

8. ... has become the proper material...

9. ... gradually gained favour...

BHeayflMTopHan pa6oTa

1. llpoBepbTe, 3HaeTe jim Bbi cnoBa.

16. Ha30BHTe cmhohhmu cjiejiyiomHx c.iob (bu Mo^Keie Hafrrw hx b ochobhom TeKcre):

1

1. show, present v

2. unsafe, weak a

3. increased, intensive v

4. keep back, slow down v

5. connect, relate v

6. understand, recognize v

7. invent, create v

8. give, supply v

9. happen, take place v

1. take, receive v

2. influence v

3. grow, increase v

4. allow v

5. cover v

6. support, keep in condition v

7. clean, purify v

16. IlepeBeAHTe c.ie/jyiomne cJioBocoqeTaHHH H3 ocHOBHoro TeKCTa:

1. to determine the design

2. the performance of the circuit

3. to tail for a new design

4. a contribution to physics

5. the vulnerability of the pro­cessor

6. to recognize the immense importance

7. to turn to semiconductor re­search

8. high degree of crystal perfec­tion

1. to witness the trace

2. water vapour

3. to permit an addition

4. to purify oil

5. to maintain the wafer

6. available opportunity

7. to avoid detrimental effects

8. an attributable range

9. a conventional amplifier

10. the new material is inherent­ly superior to materials pres­ently used

16. OnpeAejiHTe 3HaqeHHH aHnriHHCKHX cjiob, hcxo/w H3 KOHTCKCTa:

1. HOBbie MaTepnajibi exhibit ^pyrne xapaKTepucTHKH

2. Ha6jiioziaeTCH delay peaKUHH no BpeMeHH

3. 6ojiee bhcokmm level HHTerpaunn

4. to develop hobmk MaTepnaji

5. npoueccbi, occurring b nojiynpoBO/iHHKax, noKa3biBaioT...

6. o6jia/iaTb suitable CBOHCTBaMH jvm ziaHHbix uejien

7. hctopmh pa3BHTHH MoxeT 6biTb traced, HaHHHaH c 1947 ro/ia

16. IlepeBeAHTe cjieAyiomHe TcpMHHbi:

1. feature size 9. sample and hold amplifier

2. network n 10. current gain

3. on-line circuit design 11. speed gain

4. computer-aided design 12. etch-separated wafer

5. option design 13. master mask

6. tunnel rectifier 14. metal-on-glass mask

7. off-chip amplifier 15. band gap

8. sense amplifier 16. cap layer

16. Ha30BMTe Aamibie tcpmhhu no-aiirjiHHCKH. Bbi MoweTe HafiTM 3tm TepMHiibi b

OCHOBHOM TeKCTe:

1. HHTerpajibHbiH ycnjiHTejib, ycnjiHTejib cqnTbiBaHHH, nojiynpo BOflHHKOBblH ycnjiHTejib, ycnjiHTejib Ha n3C

2. KjieHKoe noKpbiTne, npoBOUHmee noKpbiTne, HaHecemie noKpbi- thh MeTOAOM norpyxeHHH, noKpbiTne, HaneceHHoe HanbuieHH- eM, CBHsyioiiiHH noACJion

3. npoeKTnpoBaHHe KpncTajuia, GjiOMHaa kohctpykuhh, npoeKTK- poBaHne cxeMbi, TonojiornqecKoe npocKTMpoBamie, onepaTMB Hoe npocKTnpoBaHHe cxeM, npoeKTHpoBamie c Bbi6opoM cxeM

4. AKuenTopHaa npHMecb, jTempyioiJuaH npHMecb, npHMecb, Ha- hochMaa na n0BepxH0cTb n0Jiynp0b0hhhKa

5. ycHJieHMe no TOKy, HHBepcHbin K03(})(l)HiXHeHT ycnjieHHH, Ha- rpy30HHaH cn0C06H0CTbjiornqecKOH MC, HOMHHajibHbiM ko3(J) (J)MUHeHT yCMJieilHH

6. 3a3op Meacny KOHTaicraMH, wnpHHa 3anpemeHHOH 30Hbi, 3anpe uieHHaH30Hac npHMbiMM nepexonaMM, MHKpo3a3op, 3anHpaiowwn CJIOH, repMeTH3HpyiOlllHH CJIOH, CJIOH, CTOHKHH K TpaBJieHHK), Ha~ nbuieHHbiH cjioh, ncxojiHbiH cjioh, MHorocjioHHaa njieHica

2. llpoBepbTe, KaK Bbi onepupyeTe rpaMMaTMHecKMMM nBneHMn- mm npH nepeBOfle.

   24. IlepeBenHTe npeojiowetiHJi (>ctho), y^iMTUBan ocoochhoctm nepeBO/ia npaBbix onpeACJieHMH:

1. From the information available in the literature, CMOS chip un­der consideration demands substantial design efforts.

2. Time delays associated with interconnections made of different materials have been considered.

3. The proper choice of the material within the constraints (orpa- HHHeHne) placed by the fabrication technology existing can result in minimization of the RC delay time.

4. The area occupied by a MOS transistor can be made smaller by shortening its channel width and length leading to a faster device.

5. Smaller dimensions, larger chip size, and circuit innovations in question all contribute to the progress of integration and the gen­eration of a larger number of components on a single chip.

6. The long distance line voltage drop will increase with scaling men­tioned above.

7. Polysilicon to be used meets all of the requirements addressed above.

3. llpoBepbTe, KaK Bbi yiueeTe nepeBOflMTb.

25. IlonroTOBbTe Koirrpo.ibiibiH nepeBon ociioBHoro TeKCTa.

4. ripoBepbTe cBoe yMeHMe roBopMTb.

25. Il0Ar0T0BbTe cooomeHMfl no c.ie/iywiuHM TeMa>i:

1. Intrinsic semiconductor properties.

2. Contributions to the study of semiconductor physics.

TpeTbE 3ahhthe KoHTponb m3yHeHHoro MaTepiiana

1. KoHTpo/ib nepeBOfla ocHOBHoro TeKCTa.

BbinojiiisieTcsi ycrao, bu6opomho.

2. KOHTpOJlb CJIOB B C/lOBOCOHeTaHHflX.

BbinoJiiiHeTcfl hjih ycnio, hjih nHCbMCHHo no Bki6opy npeno^aBaTe.m

3. KoHTponb yMeHMfl BbiflBJinTb 3H3HeHMfl cjiob c yneTOM koh- TeKCTa.

25. IlepeBeiiHTe, buhbjiha koHTeKcryajibHoe 3HaqeHHe Bki^ejieHHkix cjiob:

1

1. Aluminium is the most problematic material to be used for metal­lization in maintaining contact stability.

2. A lower resistivity is required for maintaining circuit performance.

3. Use of this self-test technique greatly simplifies field maintenance.

4. For storage and retrieval of data in the bubble-memory, use is made of a group of registers and counters for accurately maintaining the position of data.

5. Any system must be designed to require less maintenance.

6. Preventive maintenance is absolutely necessary.

2

1. This entails turning one of the file processors into an input/output unit.

2. Today, plants depend on carbon dioxide and water to survive. In turn, they produce organic matter.

3. Water can turn to a solid.

4. Let us now turn to ceramics.

5. At the turn of the 18th century nobody knew of semiconductors.

3

1. Sometimes the performance of the circuits can suffer from tech' nological advancement.

2. The systematic approach can anticipate the problems that will arise in future VLSI.

3. The average wire length can be estimated by a very useful statisti­cal formula.

4. KoHTponb yMeHHR nepeBOAHTb c nucTa.

Tckct2.1 C

IlepeBeAhTe tckct ycTHo c jiHcTa. 03arJiaBbTe tckct. 3naweHne bUjiciieHHbix cjiob bu

CMOJKCTe nOHflTb M3 KOHTeKCTa.

All the components of the circuit must be fabricated in a crystal of silicon or on the surface of the crystal. Silicon is far from being ideal material for these functions and only modest values of resistance and capacitance can be achieved. Practical microelectronic inductors can­not be formed at all. On the other hand, silicon is a material without equal for the fabrication of transistors, and the abundance of these active components in microelectronic devices more than compensates for the shortcomings of the passive elements.

TeKCT 2.2 C

IlepeBeAHTe tckct nMCbMeHHO 6e3 cjiob a pH. 3Ha*ieHMe BbinejieHHWX cjiob Bbi CMO>Kei e noiurrb H3 KOHTeKCTa.

BapnaHT 1

Materials for Multilayer Interconnections

As device dimensions are becoming increasingly smaller se­vere requirements are being imposed on the electrode material. The basic demand is conductivity because it can substantially improve the resistances and delay times of the electrical interconnections lines used for VL1C structures.

Historically, metals like aluminium and gold have been used in bipolar and MOS IC’s. With the advent ofsilicon-gate MOS technol- polysilicon has been extensively used to form gate electrodes and ^terconnections. Refractory metals such as tungsten (W), molybde- ^num (Mo), titanium (Ti), and tantalum (Ta) and their silicides are re­viving increased attention as a replacement/compliment of polysilicon.

Silicides of W, Mo and Ta have reasonably good compatibility with the IC fabrication technology. They have fairly high conduc­tivity; they can withstand all of the chemicals normally encountered during the fabrication process.

BapHaHT 2

Materials Requirements

The following are the general requirements for a material for interconnects and contacts: high electrical conductance, low ohmic contact resistance, electromigration, stable contacts (with silicon and final metallization), corrosion and oxidation resistance, high tem­perature stability, strong adhesion characteristics.

One of the primary considerations is to obtain a material with high electrical conductivity and low ohmic contact resistance. It should also have good electromigration resistance arid be stable when in contact with silicon and/or oxide and the final metallization.

These parameters must be maintained throughout the high tem­peratures encountered during processing; i.e., to maintain their metal­lurgical integrity. This requires that the melting point of the materials used be much higher than conventional process temperatures.

5. KompoJib yMeHMfl nepeBoamTb nMCbMeHho co cnoBapeM. TeKct 2.3 c

nepeBeflHTe tckct nwcbMeHHO. OnpefleJiMTe cnopocTb Bauiero nepeBO/ia. BaM aaeTcfl 20 MHHyT.

Major Steps in the Growth of Computer Technology

The first transistor developed was the junction transistor. Nearly all transistors today are classed as junction transistors.

Throughout the years there were developed new types of junction transistors that performed better and were easier to construct. When first introduced, the junction transistor was not called that; it was the “cat’s whisker” used in the first radio receivers in the 1920s. Shockley and his crew resurrected (B03p0/iMTb) it, a mere imposing name sounded much

more scientific. The junction transistor of 1948 was further modernized in 1951, with the development of the “grown” transistor. The technolo­gy for manufacturing transistors steadily improved until, in 1959, the first integrated circuit was produced — the first circuit-on-a-chip.

The integrated circuit constituted another major step in the growth of computer technology. Until 1959, the fundamental logical compo­nents of digital computers were the individual electrical switches, first in the form of relays, then vacuum tubes, then transistors.

In the vacuum tubes and relay stages, additional discrete compo­nents such as resistors, inductors and capacitors were required in or­der to make the whole system work. These components were about the same size as packaged transistors. Integrated circuit technology per­mitted the elimination of some of these components and “integration” of most of the others on the same chip of semiconductor that contains the transistor. Thus the basic logic element — the switch, or “flip-flop”, which required two separate transistors and some resistors and capaci­tors in the early 1950s, could be packaged into a single small unit in 1960. That unit was half the size of a pea.

The chip was a crucial (BaxHbiii) development in the accelerating pace of computer technology With integrated circuit technology, it be­came possible to jam (3(3. pa3MemaTb) more and more elements into a single chip. Entire assemblies of parts could be manufactured in the same lime that it previously took to make a single part. Clearly, the cost of pro­viding a particular computing function decreased proportionally. As the number of components on an integrated circuit grew from a few to hun­dreds, then thousands, the term for the chip changed to microcircuit.

6. KoHTponb yMeHmh aHhoTnpoBaTb m pecfcepMpoBaTb. TeKct 2.4 c

npoMHTairre tckct h KpaTKo H3Jioa<HTe ero co/iepwaHHe Ha pyccKOM snuKe. OGieM *amero pe^epara He AOJiweH ripeBbiuiarb 7—8 npeA/ioweHHii.

Made in Space

Numerous experiments carried out at the Soviet orbital stations have paved the way to the development of methods and means of ^lndustrial production in space.

In recent years active research has been going on in one of the fields of space industrialization — space material study and production of new materials of better quality on board the spacecraft, ranging from semiconductors for microelectronics to unique and more efficient med­icines for the treatment of quite a number of diseases (6ojie3Hb).

Conditions on board a space vehicle orbiting the earth drasti­cally differ from those on its surface. However, all of these condi­tions can be simulated on Earth, except for one — prolonged weight­lessness.

What can weightlessness be used for? Many well-known phys­ical processes proceed differently due to absence of weight. In case of melts of metals, glasses, or semiconductors, they can be cooled down to the solidification point even in space and then brought back to Earth. Such materials will possess quite unusual properties.

There is no gravitation convection, i.e. movements of gases or liquids caused by difference of temperature in space. Manufactur­ers of semiconductors know only too well that convection is to blame for the various faults in semiconductors. The technical specialists started their experiments aimed at proving the advantages of the zero-g state for the production of certain materials. In the Soviet Union all orbital stations from Salyut 5 onwards were used for that purpose, as well as automatic space probes and high-altitude rock­ets. Since 1976, over 600 technological experiments have been staged in the Soviet Union on board its manned and unmanned space ve­hicles. An impressive number of similar experiments have also been carried out by scientists in other countries.

The experiments proved that scientists were right. Many of the properties of the materials obtained in the zero-g conditions were much better pronounced as compared with those of the specimens produced on Earth.

At the same time, test runs of the installations of the next gen- eration developed for the small-scale industrial production in space have started. One such installation, Korund, was successfully test' ed on board the Salyut station. It had been designed to grow mono- crystalline semiconductors possessing unique properties.

In order to launch full-scale industrial production of mono- crystalline semiconductors, bioactive preparations and other sub'

stances it is not enough just to commission new-generation tech­nology installations. Special space vehicles will also be needed. Re­search has shown that the acceleration rate on board these vehicles must be reduced to the minimum. Power plants of the capacity of dozens of kw, and later, of hundreds of kw are needed.

TeKct 2.5 c

npo^HTafiTe tckct h yKaxifrc c})aKTopu, BJiHffloniHe na KaiecTBo pe3ncra. BbinoJiHH- excfl ycTHo. 3HaqcHHc Bb^ejicuHbix cjiob bu CMoxere noHHTb H3 KoirreKCTa.

Photoresists

Photoresists are high-sensitive materials used to generate etched patterns in substrates. The quality of the etched images depends upon the success of every step in the process, and the image flaws may be due to resist or nonresist imperfections, or to conditions which un­derline resist performance. Some fundamental factors influencing resist performance include adherence coating thickness, heat treat­ment, and resist response to various energy sources. Let us start with adherence.

A strong bond between photoresist and substrate is essential to minimize dimensions changes during development and undercutting or loss of adherence during etching. The intimate contact between resist and substrate required for strong adhesion can be inhibited by surface impurities or resist components. Zones of weakness can be created by surface contaminants such as dust, oil, absorbed gases (par­ticularly absorbed water), dopant ions, or monolayers of previous resist coatings. Removal of obvious visible impurities such as grease, fingerprints, or dust can give an apparently clean surface, but con­tamination is often insidious (onacHbin) because it is invisible. Wfeakly adsorbed layers of tobacco smoke, water vapor, vacuum pump va­pors, or nonstripped resist components may be present, even though difficult to detect. Condensing one’s breath on the surface or placing the wafers on a cold plate can sometimes reveal an adsorbed pattern °n unetched wafers after resist stripping.

TeKct 2.6 c

ripoHHTaDTe TeKCT h cnejiafrre aHHOTamuo Ha aHniHftcKOM H3biKe. HcnoJib3yfrre cjie- ijyrouwe icnHiiie:

... deals with ... ... is used for... ... offers properties...

Ceramic-to-Metal Seals

Ceramic-to-mcta! seals are a natural extension of the state-of- the-art where adverse temperature, shock and vibration conditions prevail. Alumina ceramics are widely used for high-performance elec­tronic applications because of their excellent properties and moderate costs. Beryllia ceramic-to-metal seals are available but generally lim­ited to where high heat transfer is needed.

The alumina ceramic family offers a combination of desirable properties for ceramic-to-metal seals:

Electrical — high resistance, low losses, and high dielectric strength.

Mechanical — high compressive, tensile, and flexible strength, high impact strength and high hardness.

Thermal — intermediate thermal expansion coefficient that en­ables sealing to many metals and matching components, good thermal conductivity, good thermal shock resistance, and good high tempera­ture properties.

Chemical — extremely stable and surface capable of withstanding harsh chemicals and cleaning procedures.

7. KoHTponb yMeHmh roBopMTb.

25. Jlpifre KJiaccH<|)HKaiuuo imeiioHHUX MaTepnajioB (tckct 2.1Q. HcnoJiuyfrre cxeMv:

Film Materials

25. CpaBHirre HecKOJibKO MaTepHajioft, HcnoJib3yeMbix b MHKpo3JieKTpoHHKe: hx (Jjh- 3iroecKHe, 3.ieKTpH^tiecKHe h Apyrwe cBowcTBa.

26. PaccKa^otTe, hto Bbi 3HaeTe o npHMeHeHHH KepaMHKH. (HcnoJib3yirre MaTepwaii TeKCTa 2.6 C “Ceramic-to-Metal Seals”.)

27. IloziroTOBbTe coo6weHMfl no cjieayiomHM TeMaM (bpcmh nonroroBKH — 5 MHHyr, BbiCKa3biBaiiHH —1—2 MHHyru):

1. Intrinsic semiconductor properties.

2. Silicon and its dominant role as a material for microelectronic circuits.

3. New materials and their potentials.

25. AoKajKHTe npaBHJibHocTb h/ih 0iiiH60*iH0CTb cJieayiomHX cy^eHHfl:

1. The silicon dioxide is particularly important in the fabrication of integrated circuits.

2. Oxygen influences many silicon wafer properties.

mm tpethh

Ochoshou meKcm: Problems in Microelectronic Circuit Technology.

TpaMMamwecKue nejiehuh: Turin cKa3yeM0ib. Cnoco6bi hx BbiflBJieHHfl

b TeKCTe h hx nepeBOA-

JlencunecKue mac huh: KoHTeKCTyajibHoe 3Ha4eHHe cjiob due, appear,

advance.

FlepeBOfl cjiob c npe<j)HKcaMn: in-, out-, en-, inter-.

NEpboe 3ahhthe

Pa6oTa b ayflMTopnn

1. IIpoBepbTe, 3HaeTe nn Bbi cneflyK>mne cnoBa.

CjIOBa, HMCKHUHC OAHHaKOBWM KOpeHb C pyCCKMMH CJIOBaMH:

manufacture n specification n associate v attack v

ordinary a generate v position n sandwich v

process n voltage n block v emitter n insulator// regular a trivalcnt a collector n serve v mobile a mask n variety n

technique n

CjioBa HcxoAHoro ypoBhh h h3 npeAUiecTByioumx pa3/ieJiOb

perform v consider v bind (bound) v available a band n

excess n intrinsic a requirements n impose v delay n

involve v improve v create v state n expose v

reach v sequence n realise v contribute v flexible a

2. YnnTecb nepeBOAMTb.

1. riepeBeAMTe cJieiiyiomHe peseBbie cnpe3kM. 06paTwre rum Man He na nepeB0flCKa3ye- Moro, nepBbiM KOMnoHenroM Koroporo hBjIhctch JiHMHaa 4>opMa marojia to be:

1. the discovery is leading to

2. the discovery is able to lead to

3. the discovery is certain to lead to

4. the discovery is expected to lead to

5. the discovery is likely to lead to

6. the discovery is supposed to lead to

7. the discovery is to lead to

8. the discovery is valuable

9. the discovery is of value

10. the discovery is due to the need of

11. the discovery was followed by

12. the discovery is particularly important in

13. the discovery is of value

14. the discovery is presently in widespread use

15. the discovery is a readily ap­parent means

16. the discovery is being applied to

17. the objective is to discover

2. nepeBe/urre cjic^ioihhc peneBbie OTpe3KH. 06paTHTe BHHMamie Ha nepeBOA CKa3yeMoro, nepBbiM KownoHeHToivi KOToporo hbjihctch JiH'Juaa $opMa rjiarojia to have:

1. the improvement has a reason ...

2. the improvement has influenced the power...

3. the improvement has been influenced by ...

4. the improvement has been supposed to influence the power...

5. the improvement has to be introduced because ...

6. we have studied the emission properties of gas plasma...

7. we have to study the properties of...

8. the properties have been studied by...

3. riepeBeflHTe pcwcBwe 0Tpe3KH. 06panrre BHHMamie Ha hx CMbicjioBoe pa3JimHe, 3aBHc»mee ot $opMbi marojia:

Active

1. Hmo denaem N¹ ?

1. the improvement requires

2. the concept predicts

3. the effort makes

4. the density determines

Passive

2. KaKOMy deucmeuio nodeepaaemcn N¹ ? —*- the improvement is required —the concept is predicted —the effort is made —► the density is determined

4. IlepeBeAHTe peweBUe orpe3KM, yHHTbiBaji tj>opMy bpcmchh cKa3yeworo b naccHB- hom 3aJiore:

1. the solution is provided (was provided, has been provided, has to be provided, will be provided)

2. the unit was arranged (has been arranged, is being arranged, is to be arranged)

5. ITepeBeAHTe peqeBue OTpe3KH, yMHTWBaa oco6eiinocTH nepeBo/ia maroJioB to follow, to influence, to watch b naccHBHOM 3a.iore:

1. the pattern is influenced (was influenced, has been influenced, has to be influenced, is to be influenced)

2. the experiment was followed (has been followed) by

3. the packing is watched (is being watched, has been watched, will be watched)

Ochobhom tekct

1. riepeBe/iHTe ycTHo c JiHCTa nepByio HacTb TeKCTa (I). PaCoTa BbinojiHflercH no4 pyKOBO^CTBOM iipenoAaaaTejifl.

2. IlepeBeAHTe nncbMeHHo co cJiOBapeM BTopyio nacTb TeKCTa (II). (BbinojiHfleTCH caMocTosTeJibHo KaK /lOMaiuHee 3a.ua n He.)

3. O3HaK0MbTecb C TepMHIiaMH OCHOBHOrO TeKCTa:

valence band — BajicHTHan 30Ha, cB«3b conducting band — 30Ha ripoBonHMOCTH delay time — BpeMfl 3ajiep>KKH photosensitive compound - $OTOHyBCT- BMTe^bHbifi MaTepna^ coated wafer — jicrMpoBaHHaw nomroxKa thermal warping — TepMOKOJie6aHM*i,

CK3HKM

minority carrier lifetime — BpeMfl >kh3-

HH HeOCHOBHbIX HOCMTejieft reactive gas plasma technology — n;ia3- MeHHa^ TexHojiorM^ epitaxial growth — anHTaKcnajibHbift pocT, BbipaiUHBaHMe yield per slice — Bbixoii rojiHbix Ha nojx- iiO)KKy crystal pulling equipment — ycTanoDKa JV\n BblTHTMBaHHfl KpHCTajUia thermal reduction — TepMMMecKoe uoc- cTaHOBJieHMe chemical-vapour deposition — BbipaiUH BaHne KpHCTajiTia b napocjme fine-line lithography - o^cHb To^Hafl jiMTorpa(J)Hfl fine-line resolution — BbicoKoTO'inatf pa3peiiiaK)ma5i cnoco6HocTb

VLSI (very large scale integration) " MC co CTeneHbK) MHTcrpauMM BbiiU^e CBepXBblCOKOfi

Problems in Microelectronic Circuit Technology

1. The manufacture of silicon microcircuits consists of a number of carefully controlled processes, all of which have to be performed to well-defined specifications.

Processing a “wafer” of silicon, a substrate on which the micro­electronic circuits are made, is not a simple technological process.

In order to understand how transistors and other circuit elements can be made from silicon, it is necessary to consider the physical na­ture of semiconductor materials.

In a conductor current is known to be carried by electrons that are free to flow through the lattice¹ of the substance².

In an insulator all the electrons are tightly³ bound to atoms or mol­ecules and hence⁴ none are available to serve as a carrier of electric charge.

The situation in a semiconductor is intermediate⁵ between the two: free charge carriers are not ordinarily present, but they can be generat­ed with a modest expenditure⁶ of energy.

Semiconductors are similar to insulators in that they have their lower bands completely filled⁷. The semiconductor will conduct if more than a certain voltage is applied. At voltages in excess of this critical voltage, the electrons are raised from the top⁸ on the band 1 (the valence band) to the bottom⁹ of band 2 (the conducting band). Below¹⁰ this critical voltage, the semiconductor material acts as an insulator. Semiconduc­tors such as that described above are called intrinsic (npMpoflHbiw) semi­conductors — they are pure materials (for example, silicon or germani­um). It should be noted that a crystal of pure silicon is a poor¹¹ conductor of electricity. Thus¹², conductivity poses¹³ a problem.

Several other requirements are imposed on materials. The basic demand appears to be conductivity because it can substantially im­prove 14 the resistance and delay times for VLSI. The improvement of conductivity has been made in several ways. Most semiconductor de­uces are known to be made by introducing controlled numbers of im­purity atoms into a crystal, the process called doping.

Two independent lines of development are considered to lead to l^croscopic technique that produced the present integrated circuits. One Evolves the semiconductor technology; the other is a film technology.

Let us consider the former¹⁵ one first. To improve the semicon­ductor crystal the impurities known as dopants are added to the silicon to produce a special type of conductivity characterized by either posi­tive (p-type) charge carriers or negative (/7-type) ones. The dopants are diffused¹⁶ into semiconductor crystals at high temperatures. In the furnace (nenb) the crystals are surrounded by vapour containing at­oms of the desired dopant. These atoms enter the crystal by substitut­ing ¹⁷ for the semiconductor atoms at regular sites¹⁸ in the crystal lat­tice and move into the interior¹⁹ of the crystal.by jumping from one site to an adjacent²⁰ vacancy²¹.

Silicon crystals may be doped with different elements. Suppose sil icon is doped with boron. Each atom inserted²² in the silicon lattice cre­ates a deficiency²³ of the electron, a state that is called a hole. A hole also remains associated with an impurity atom under ordinary circumstanc­es ²⁴ but can become mobile in response to an applied voltage. The hole is not a real particle, of course, but merely²⁵ the absence of an electron at a position where one would be found in a pure lattice of silicon atoms. Nevertheless²⁶, the hole has a positive electric charge and can carry elec­tric current. The hole moves through the lattice in much the same way that the bubble²⁷ moves through a liquid medium. An adjacent atom trans­fers²⁸ an electron to the impurity atom, “filling” the hole there but cre­ating a new one in its own cloud of electrons; the process is then repeat­ed, so that the hole is passed²⁹ along from atom to atom.

Si licon doped with phosphorus or another pentavalent element is called an /7-type semiconductor. Doping with boron or another triva- lent element gives rise to a p-type semiconductor.

Impurities may be introduced by the diffusion process. At each dif­fusion step³⁰ in which /2-type or p-type regions are to be created in cer­tain areas, the adjacent areas are protected³¹ by surface layer of silicon dioxide, which effectively blocks the passage of impurity atoms. This protective layer is created very simply by exposing³² the silicon wafer at high temperatures to an oxidizing atmosphere. The silicon dioxide is then etched³³ away in conformity (b cooTBeTCTBHn) with a sequence³⁴ of masks that accurately delineates³⁵ multiplicity³⁶ of /i-type andp-type regions.

To define the microscopic regions that are exposed to diffusion in various stages³⁷ of the process, extremely precise³⁸ photographic pro­cedures³⁹ have been developed. The surface of the silicon dioxide is

coated with a photosensitive organic compound that polymerizes wher­ever it is struck by ultraviolet radiation and that can be dissolved⁴⁰ and washed away everywhere else. By the use of a high-resolution photo­graphic mask the desired configurations can thus be transferred to the coated wafer. In areas where the mask prevents⁴¹ the ultraviolet radia­tion from reaching the organic coating the coating is removed. An etch­ing acid⁴² can then attack the silicon dioxide layer and leave the under­lying silicon exposed to diffusion.

A transistor can be made by adding a third doped region to a di­ode so that, for example, a p-type region is said to be sandwiched be­tween two H-type regions. One of the /7-doped areas is called the emit­ter and the other, the collector; thep-region between them is the base.

The transistor described is called an npn transistor. There may be pnp transistors. The terms⁴³ are likely to denote⁴⁴ the sequence of doped regions in the silicon.

The first transistor structures were formed by alloying⁴⁵ or diffu­sion in bulk⁴⁶ single-crystal Ge or Si, but with the development of “pla­nar technology” in the early 1960s the possibility of forming high fre­quency transistors and integrated circuits using epitaxial semiconductor films was realized.

The success of silicon in microelectronics is believed to be largely attributed to excellent properties of SiO interface⁴⁷ and ease of ther­mal oxidation of silicon.

The recent years have seen considerable interest in the subject of oxygen and its precipitates⁴⁸ in silicon. It has now been established⁴⁹ that their presence can have a variety of effects, harmful⁵⁰ as well as beneficial. Oxygen concentration is known to influence many silicon wafer properties, such as wafer strength, resistance to thermal warp­ing, minority carrier lifetime, and instability in resistivity. Oxidation is widely used to create insulating areas. However, many phenomena hap­pen not to be understood at present.

An important aspect of the oxidation process is its low cost. Several hundred wafers can be oxidized simultaneously in a single operation.

Reactive gas plasma technology is reported to be presently in wide­spread use in the semiconductor industry. This technology is being applied to the deposition and removal⁵¹ of selected materials during the manufacture of semiconductor devices.

Contributing greatly to the manufacturing technique is a unique crystal forming method known as epitaxial growth.

Epitaxial growth in combination with oxide masking and diffu­sion has given the device designer extremely flexible tools⁵² for making an almost limitless variety of structures.

After 1964, epitaxial growth remains an important technique in semiconductor device fabrication, and the demand for improved de­vice yield per slice ⁵\ still higher device operating frequencies and more sophisticated⁵⁴ device structures, has needed continuing innovation⁵ and development.

Advances ⁵⁶ in silicon crystal growth technology have encouraged advances in the automation of crystal growing equipment. Crystal pull­ing ⁵⁷ equipment now available uses computer software to control all the growing parameters.

2. Let us see what a film technique is like.

Even before the invention of the transistor the electronic industry had studied the properties of thin film of metallic and insulating mate­rials. Such films range in thickness from a fraction of a micron, or less than a wavelength of light, to several microns.

The techniques for the deposition⁵⁸ of thin films are numerous and include the following methods: evaporation, sputtering⁵⁹, anod­ization, radiation, included “cracking” or polymenzation, chemical reduction, thermal reduction of oxidation and electrophoresis. The first three are the major techniques used in integrated thin film circuit construction and are also applicable to silicon integrated circuitry and device work. These methods singly or in combination enable⁶⁰ a vari­ety of resistive, insulating and constructive materials to be laid down onto a suitable substrate.

The two most important processes for the deposition of thin films are chemical-vapour deposition and evaporation. The film technolo­gy has proved to provide precise dimensions.

In the fabrication of a typical large-scale integrated circuit there are more thin-film steps than diffusion steps. Therefore thin-film technology is probably more critical to the overall yield⁶¹ and performance of the cir­cuit than the diffusion and oxidation steps are. A thin film happens even to be employed to select the areas on a wafer that are to be oxidized.

The deposition of layers is followed by shaping operations, such as etching, to form the required outlines⁶². AJtematively, the film can be deposited through a mask onto the substrate to define the outlines directly.

In this way many identical thin-film devices can be made on a single sheet of material, which then are cut apart to yield individual devices.

Plasma etching, which is expected to play an important role in manufacture of semiconductor and other devices requiring fine-line lithography, involves the use of a glow discharge to generate reactive species⁶³ from relatively inert molecular gases. These reactive species combine chemically with certain solid materials to form volatile⁶⁴ com­pounds which are then removed by vacuum pumping system.

This plasma-etching process has been shown to have important advantages in terms of cost, cleanliness, fine-line resolution, and po­tential for production line automation.

Additionally, the inside of a water-fabrication must be extremely clean and orderly: a single particle happens to cause a defect that will result in the malfunction of a circuit. The larger the die⁶⁵, the greater the chance for a defect.

The structure of an integrated circuit is sure to be complex both in the topology of its surface and in its internal composition. Each el­ement of such a device has intricate⁶⁶ three-dimensional architecture that must be reproduced exactly in every circuit. The structure is made up of many layers, each of which is a detailed pattern. Some of the layers lie within the silicon wafer and others are stacked⁶⁷ on the top. The manufacturing process consists in forming the sequence of layers precisely in accordance with the plan of the circuit designer.

Nowadays much of the procedure by which ICs are transformed from the conception of the circuit designer to a physical reality is done with the aid⁶⁸ of computers. In the first stage of the development of new microelectronic circuits the designers themselves used to work at specifying the functional characteristics of the device. They also se­lected the processing steps that will be required to manufacture it. The process was difficult and not always exact. A computer can simulate⁶⁹ the operations of the circuit. Besides, computer simulation is less ex­pensive than assembling a “bread-board” (MaKeT) circuit made up of discrete circuit elements; it is also more accurate.

The layout is known to specify the pattern of each layer of the IC. The goal of the layout is to achieve the desired function of each circuit in the smallest possible space. At present much of the preliminary (npeflBapHTejibHbifi) work is done with the aid of computers. The fi­nal layout is also made with that of a computer.

Increasing interest in submicron layer now poses new problems. New developments in materials are believed to be due70 to new manu­facturing forms and vice versa.

Integrated circuit technology is evolving so rapidly that even a period as short as six months can produce a significant change.

3. IIpoBepbTe, KaK Bbi 3anoMhMrm cnoBa.

6. riepeBenHTe BbmejieHHbie cjioBa, hcxoah H3 3Ha*ieHHH, npHBe^eHHbix b CKOOKax:

1. process v (o6pa6aTbiBaTb), processing processor n

2. substance n (BemecTBo), substantially adv, substantiate v

3. intermediate a (np0Me>KyT0HHbiH), intermediately adv, medium n

4. expenditure n (pacxoTpaTa), expend v, expense n, expensive a

5. similar a (o^HHaKOBbiH), similarity n_y simulate v

6. add v (npnGaBJiHTb), additional a, addition n, adder n

7. vapour n (nap), vaporize v, vaporous g, vaporizer n

8. transfer v (nepe,n;aBaTb), transferable o; transference n

9. precise a (TOHHbm), precisely adv, precision n

10. dissolve v (pacTBopHTb), dissolvable a, dissolvent n, solution n

11. prevent v (MernaTb), prevention n, preventive a

12. harmful a (Bpe^Hbin), harm harmless a

13. advance v (^BnraTbCH Bnepen,), advance advanced a

14. establish v (ycraHaBJiHBaTb), establishment n

15. deposition n (oca^OK), deposit v, pose v, impose v

16. volatile a (jieTyHHH), volatility n, volatilize v

17. term n (TepMMH), terminal n_y terminate v, in terms

18. specify v (onpeaejmTb), specification n, specific a

19. major a (rjiaBHbin), majority n

7. Onpe/jejiHTe 3na*ienHfl anriHftcKHX cjiob, mcxoah H3 KOHTeKcra:

1. CTporo defined napaMeTpbi

2. processing of MeTanjia MO^eT 6biTb xojtoahoh

3. TpeGyeTCH He6o;ibmaH expenditure 3HeprHH

4. b HeKOTOpbix npoHBJieHHHX noJiynpoBOAHKKM similar to AHSJieKT- pHKaM

5. HMCTblH KpeMHMM — poor npOBO^HMK

6. aTOMbi npHMecw substitute aTOMbi n0Jiynp0B0,n.HMKa

7. npOBOflHMOCTb poses TpyflHOCTH

8. HHoraa HyxHO to add npnMecb k nojiynpoBOflHHKaM

9. npHMeHeHHe KpeMHHH is attributed to npeKpacHbiM KanecTBaM

10. ceimc it has been established, 4to npncyTCTBHe KMC/iopo,aa mo- xeT 0Ka3biBaTb harmful h beneficial 3(J)(J)eKTbi

11. oKHCJieHwe noflflaBJieHHeM offers MeTOzt BbipauiHBaHHH okhcjiob KpeMHHH

12. the mask prevents ot nona^aiiHH yjibTpa(J)H0JieT0B0r0 H^JiyneHMH Ha noxpbiTHe

8. IlepeBeziHTe cJieayiomHe cjioBa. OCpaTHTe BHHMaHHe Ha 3Ha4eHH5i npe^HKCOB in— eHympu, <?-; out— 6He-\ en— ynacmeoeantb; inter— eiauModeiicmeo- eamb.

in-: input n, inbuild v, inside a

out-: outbalance v, output n, outbreak n, outdated a

en-: enable v, enact v, encircle v, enclose v inter-: interaction n, interchange n, intercourse n

4. YHMTecb c/iyuiaTb n roBopuTb.

9. IIpocMOTpHTe eme pa3 nepByio MacTb ocHOBHoro TeKCTa (I). OTBeTbTe na Boupo- cw, HcnoJib3yn HH^opMauHK) TeKCTa.

1. What could you say about the manufacture of silicon microcircuits?

2. What is the physical nature of semiconductor materials?

3. When does the semiconductor material act as an insulator?

4. When does the semiconductor conduct?

5. What could you say about a crystal of pure silicon?

6. Why is conductivity one of the basic requirements imposed on materials?

7. Can you name one of the ways to improve conductivity?

8. What do we call impurities added to silicon?

9. What is a hole like?

10. How do holes behave in the p-type region?

11. What could you say about oxidation?

12. Do we call epitaxial growth of crystals unique?

5. YHMTecb aHHompoBaTb m pecfc>epnpoBaTb.

10. a) 06o6mHTe MH^opMauHio, AaHHyio b nepBoft nacTH ochobhoix) TeKCTa (I), Ha pyCCKOM J13blKe.

6. Coo6mnTe, hto Bbi y3HajiH o noJiynpoBQzjHHKax, hx iipobo/jhmocth, cnoco6ax BBeaeHHfl npHMeceft, cnocoGax TpaBJieHHSi, mieuKax, oKHCJieHHH. BbinoJiHSi- eTCJi ycTHo.

FloMaiuHee 3aaaHne

1. floBTopHTe THnbi cKa3yeMoro b anniHiicKOM si3biKe. BunoiHHre ynpavKHeHHH.

2. H3yMHTe cjioBa h cJiOBoconeTaHHfl nepBofi nacTH ochobhoix) TeKCTa (I).

3. riepeBeiiwTe HHCbMCHHo co c.ioBapeM BTopyio qacTb ocHOBHoro TeKCTa (II). (Bpe- m« nepeBO^a — 60 mhhjt.)

4. KpaTKO H3.10JKMTC CO^epJKaHHe OCHOBHOrO TeKCTa (DHCbMCHHO lia aHHlHfiCKOM H3biKe). 06i.eM Barnero H3Jio>KeHHfl — 10—12 npocrbix npeiyio>KeHHfi.

BHeayflMTopHan pa6oTa

1. YHMTecb nepeBOflMTb.

3.11. IlepeBe^HTe, y HHTbiBaa oco6chhocth nepeBO/xa pa3JiHHHbix <J>opM hthitob cKa3y- eivioro:

1

1. are still learning how to exploit the potential of the integrated circuits.

2. Wfe are to learn how to exploit the potential of the integrated circuits.

3. Wfe are sure to learn how to exploit the potential of the integrated circuits.

4. Wfe are expected to learn how to exploit the potential of the inte­grated circuits.

5. Wfe are able to learn how to exploit the potential of the integrated circuits.

6. There is a need to learn how to exploit the potential of the inte­grated circuits.

2

1. The size requirements have become increasingly severe.

2. The size requirements have to become increasingly severe.

3. The size requirements are likely to become increasingly severe.

4. The size requirements are supposed to become increasingly se­vere.

5. The size requirements are needed to become increasingly severe.

3

1. The films used were mechanically strong.

2. The films used were produced by sputtering.

3. The films produced by sputtering exhibited a tetragonal crystal structure.

4. The films were found to be mechanically strong.

5. The films found to be mechanically strong were produced by sput­tering.

6. The film composition changed with time.

7. The film production by sputtering was largely successful.

2. M3yHMTe c/iOBa u c/iOBOcoHeTaHufl ocHOBHoro TeKCTa.

1. lattice n pemeTKa (KpncTajuiHqe- CKaji)

base-centered lattice — 6a30UCHTpM- poBaHHaa pewcTKa body-centered lattice — o6i>eMHoueH- TpupoBaHHan peiucTKa face-centered lattice — rpaHeueHTpM- poBaHHaa peiucTKa

2. substance n 1. BemecTBo, 2. cym-

HOCTb

substantial a 1. cyuuecTBCHHbift, Bax- Hblft; 2. (JjaKTHMeCKHfi substantially adv no cymecTBy

3. tightly adv TecHo, njioTHO tight a 1. ruioTHbiH, KownaKTHbitt;

2. TCCHblft

4. hence adv oTciojia; cjienoBaTejibHO

5. intermediate a npoMOKyTOHHbiH, cpenHHfl

intermediately adv b npoMexyTOHHOM noJioxeHHM, nocpeiiH medium n 1. cpe^a; 2. cepeflHHa;

2. cpencTBo; cnoco6

6. expenditure n pacxoii, TpaTa expend v pacxonoBaTb, TpaTMTb expense n pacxojj

at the expense of — 3a cneT expensive a noporocToniuHft

7. fill v 1. HanojiHflTb; 2. 3aHH\iaTb filling A7 1. HanojiHeHMc; 2 Ha6nBKa filler n HanojiHHTejib

8. top n 1. BepxymKa; 2. Bbicuiaa CTy- neHb

9. bottom n 1. HH3; 2. 0CH0BaHHe, oc- HOBa

10. below prp HHxe low a HH3KHfi lower v noHHacaTb

11. poor a 1. 6e;iHbiM; 2. njioxoii poverty n ScaHocTb

12. thus adv TaKHM 06pa30M

13. pose v: to pose a problem 3d. co3^a- BaTb TpyiiHocTM ; 03a^a4MBaTb position n nojio)KeHne, mccto impose v HajiaraTb

imposing a npoHSBo/umiHH cmibHoe BneMauieHHe

14. improve v yjiy^maTb, coBepmeHCT- BOBaTb

improvement n yjiymueHHe, coBep- UieHCTBOBaHHC prove v 1. flOKa3biBaTb; 2. OKa3biBaTbca

15. former a npoKHMM, npe^uiecTByio-

UIHH

in former times — b npeacHHe BpeMCHa the former — nepBbift (H3 £Byx Ha- 3BaHHbIX)

Ant. the latter — nocjiejiHHM (H3 iiByx Ha3BaHHbIX)

16. diffuse v 1. pacnbiJiJiTb; 2. pacnpo- dpaH«Tb; 3. ;iii(i)(l)yHAMpoBaTb diffusible a cnoco6Hbifl k diffusion n 1. pacceHBaHHe; Jimjj^jy-

3M«;2. pacnpocTpaHeHHe diffusive a flH(J)(J)y3Hbift

17. substitute v 3aMeHJiTb; 3aMemaTb substitution n 3aMeHa; 3a.McuieHHe

18. site n mccto

19. interior n BHyTpeHHHH CTopoHa interior a BHyrpeHHHH exterior a BHeuiHHft

20. adjacent a cmokhljh, coceiiHMM be adjacent to — npHMbiKaTb

21. vacancy n 1. nycTOTa; cBo6o,HHoe MecTo; 2. npo6eji

vacant a He3aHHTbift

22. insert v 1. BCTaBjmTb; 2. BKJiioMaTb insert n BKJiajjbim

insertion n 1 BKJiioMeHHe; 2 npo- KJia.HKa

23. deficiency n 1. HenocTaTOK; 2. ot-

CyTCTBMC

deficient a hchocthtomhbift, Heno/iHbift efficiency n 3cJ)(J)eKTHBHocTb, npoH3- BOflHTeJlbHOCTb efficient a 3(jD(J)eKTHBHb[H, .neftcTBeH-

HblM

24. circumstance n 1. 06cT0HTejibCTB0, cjiyMan; 2./?/ycjioBna; 3, noapo6HocTH the circumstance that... — tot (J)aKT,

MTO ...

25. merely G^/vTojibKo; npocTo mere a HBHbift; npocroft

26. nevertheless cj bcc *e, o^HaKo

27. bubble n 1. ny3bipeK: 2. umjimhopm- wecKHft MarHMTHbiii jiomch, UM.Il,

3. ycTpoflcTBo Ha UM/1, bubble memory — 3Y Ha LIM/1,

28. transfer v 1. nepeMemaTb; 2. nepc- iiaBaTb

transfer n 1. ncpeHoc, 2. nepeaawa transferable c nonycKaiouiH ft ncpc^a- ny

transference n nepe^aMa

29. pass v 1. h^th; npoxojjHTb; 2. He o6paTHTb BHMMaHHe, 3. nepeceKaTb;

4. nepenaBaTb; 5. nepcxonnTb H3 on- Horo coctojihhji Biipyroc; 6. nponyc- KaTb, nporoHJiTb

pass n 1. npoxo;i; nyTb; 2. nporoH, npoxoii

passband — nonoca nponycKaHHH pass instruction — xonocTaH KOMaaaa password n Ko^oBoe cjiobo, napojib

30. Step n 1. Uiar; 2. Mepa; 3. CTyneHb,

2. 3Tan

step by step — nocTeneHHbifl, cTyneH- MaTbitt

step function — CTyneHMaiaH (J>yHK-

UHH

step v 1. CTynaTb; 2. noHHxaTb Hanpji- aceHHe

stepless a 1. ruiaBHbiw; 2. step-wise — nouiaroBbift

31. protect v 1. 3auiHmaTb; 2. npcao- XpaHJITb

protection n 3aiuHTa protective a 3amHTHbiH; npeaoxpaHH- TCJIbH blft

32. expose v 1. BbicraBJiHTb; 2. nonBep- raTb B03iieKcTBm0

exposition n 1. BbiCTaBKa; 2. H3Jioxe- HMe

33. etch v TpaBHTb Ha MeTajuie etching n TpaBJieHne etch-printed circuit board — nenaTHa^

njiaia

34. sequence n nocjie^oBaTejibHOCTb; psm; nopaaoK

consequence a 1. nocjieziCTBMe; 2. Bbi- BOii; 3. Ba^KHOCTb in consequence of — bc/ic£ctbhc consequent a 1. jiorimecKH noc.ne,ao- BaiejibHbift; 2. HBJunouiHHCfl pe- 3yjibTaTOM consequently adv cjiciioBaTejibHo

35. Delineate V ycTaHaBjwBaTb pa3Mep, oMepiaHmJi

delineations 1. nnaH; 2, onHcamie

36. Multiplicity n 1. MHoroMhcJicHHocTb; 2. Pa3Hoo6pa3Mc; 3. C/ioxHocTb multiplier n 1. MHoxmejib; 2. Iio6a-

BOMHOe conpoTMBJieHiie multiply v 1. yBejiHHHBaTb; 2. yMHo- acaTb

multiples 1. MHoroKpaTHbift; 2. mho-

TO)KHJlbHblft

37. stage n 1. $a3a; nepnoii, 3Tan; 2. cry- neHb, craaHfl; 3. KacKajx; 4. jmeiiKa staged data transfer — KacicaiiHaH ne-

pecbiJiKa jaHHbix staging — nepeMemeHMe 6ji0K0B,naH- HblX

38. precise a tomHbiPi precisely <k/vtoⁱiho precision n TOMHOdb

39. procedure n npouecc pa6oTbj; Tex- HOJiorHMecKHft npouecc procedure for reset — npoueuypa

c6poca

proceed v 1. npojiojixaib, 2. nepexo- JIHTb k neMy-Ji. proceedings n pi Tpyjjbi process v o6pa6aTbiBaTb; npon3Bo- ziHTb TexHOJiorHMecKyio onepaumo process chart — flnarpaMMa npoucc- ca

process data — ^aHHbie o6pa6oTKH

40. dissolve v 1. pacTBopaib; 2. pa3Jia- raTb; 3„ aHHyjiwpoBaTb dissolvable a pa3JioacHMbifl Ha MacTH;

paCTBOpHMblfi dissolvent n pacTBopjuomntt; pacTBo- pmejib solution n pacTBop

41. prevent v npcfloTBpamaTb; npejjo- XpaHJITb

preventive a npejiynpeziHTejibHbifi;

npot^HJiaKTMMecKHii prevention n npe;ioTBpameHHe

42. acid n KHCJiOTa acidify v oKucjuiTbcji

43. term n 1. npcneji; cpoK; 2. Marti.

MJ1CH

terms n pi ycjioBHfl cornauieHHH in terms of — 1. b BHue; 2. b cjimhh- uax; 3. b noHHTMHx; 4. b c^yHKUH- «x; 5. Mepe3 in general terms — b o6luhx wepTax

44. denote v 1. o3HanaTb; o6o3HawaTb; 2. yKa3biBaTb

denotation n 1. TOMHoe 3HaneHHc;

2. o6o3HaMeHHe note n 3aMeTKa; 3HaK note v 3aMCMaTb, iicjiaTb 3aMeTKy notable a 3avfeTHbift

45. alloy vcnjiaB^jiTb alloy n cnjraB

46. bulk s 1. Macca, ocHOBHas wacTb; 2. o6t>cm; 3. noiyioxKa

in bulk — b uejioM

bulky a 6ojibmoii, rp0M03₍n_>KMii

47. interface s 1. B3aHMocB5i3b; B3an- Mo^eftcTBHe; o6jiacTb B3aHMojeftcT- bhh, 2. MHTeptJjeftc, ycrpottcTBo co- npsDKeHHsi, pa3iiejia; noBepxHocTb pa3nejia

48. precipitate v 1. ycKopflTb; 2. ocaac- ^aTb(csi), Bbina^aTb b ocanoK precipitate s ocaaoK precipitation s ocaxneHMe; Bbina,ae-

HHe

49. establish v 1. ycTaHaBJiHBaTb; 2. flo- Ka3biBaTb; 3. yHpe)KAaTb; ocHOBbi- BaTb, co3^aBaTb

establishments 1. ycTaHOBJieHHe; co3- naHne; 2. noKa3aTejibCTBo; 3. opra-

HH3auH«; yMpe>KHeHHe

50. harmful a Bpc;iHbitt harm s Bpen

51. removal s 1. yjiajieHHe, ycTpaHe- HHe; 2. cMemeHHe

remove v 1. y6npaTb; 2. cMemaTb removed a yuaJieHHbift; CMemeHHbift

52. tool s pa6o^liHH HHCTpyMCHT; opynne

53. slice s 1. tohkhK cjiofi; 2. nojiynpo- BOiiHHKOBaji ruiacTHHa, n/n; 3. Kpn- CTajui (HC); 4. ceiajHOHHbift MHKpo- npoueccop

slice v pe3aTb Ha TOHKHe cjioh

54. sophisticated a cjioxHbift; onbiT-

Hbift; HanyMaHHbifi sophisticated equipment — cjioxnaa annapaiypa sophistication s 1. yMynpeHHocTb; 2. Kpyro3op; no3HaHHe; mnpoKHfi HayHHbifc Kpyro3op

55. innovation n 1. hobobbc^chhc, hob- IlieCTBO B TeXHHKe; 2. HOBaTOpCTBO

56. advance s 1. nponBHxeHHe; ycncx; 2. npoipecc

advance v 1. iiejiaTb ycnexn, npojiBH- raTbCfl; 2. BbiABHraTb

advanced a 1. nepefloBott; 2. ycneBaio- LiiHft; noBbiuieHHoro THna

57. pull v 1. TfiHyrb, 2. pacTHTHBaTb;

BblTaJIKHBaTb

pulls 1. T«ra; 2. HaTJDKeHHe, pacTfl- xeHne; npHTJDKeHHe pull-down — onycKaiomcc Memo pull-up resistor — Harpy30MHbi^ pe3H- CTOp

58. deposition s ocaxneHMe; oTJioace- HHe ocanKOB, BbinaiieHHe chemical vapour deposition (CVD) —

xhmhhcckoc ocaxacHHe H3 napo- boK $a3bi deposits 1.oTJioxcHne,ocanoK; 2. mc- cTopo^KiieHHe, 3ajie)Kb; oca)tmeH- Hblfi cjioR

59. sputtering s pacnbiJieHHe sputter v pacnbUiflTb

60. enable v 1. flaBaTb B03M0>KH0CTb;

2. HCJiaTb B03M0XHbIM

61. yield s Bbixo^ rojHbix (cxeM) yield v .aaBaTb pe3yjibraT; np0H3B0-

ilHTb; BbwaBaTb (HMnyjibc); bo3- BpauxaTb (3HaneHMe)

62. outline s o^cpTaHHe, KOHTyp outline v HapncoBaTb KOHTyp

63. species s 1. bhu, nopojia; 2. pa3Ho

BHZlHOCTb

specify vtohho onpeiiejisiTb; ycTaHaB JIHBaTb

specifics l.xapaicrepHhiH; 2.TOHHbifl, onpcnejicHHbiH; 3. yuejibHbitt specification s 1. cneuH(})HKauMfl; 2. nc- xa^b, noApo6HocTb

64. volatile a 1. JieTyHHH, 6bicTpo hc- napjuomnflcfl, 2. 3Hcpro3aBncHMbiH (3Y)

volatility s JieTynccTb volatilize vMcnapflTbcsi, yjieTyHHBaTb- Cfl

65. die s (p/dice) 1. MaTpwua; 2. Kpnc- Tajui (HC)

66. intricate a 3anyTaHHbift, cjioxHbitt

67. stack v cKJia^biBaTb, HaKaruiHBaTb stack a 1. Macca; Ha6op, KOMnjieKT;

2. cTeKOBaa naMHTb

68. aid n noMomb aids n pi cpejicTBa aid v noMoraTb

69. simulate v 1. voiiejiHpoBaTb; 2. hmh-

THpOBaTb

simulation n Mo;ie^npoBanne

70. to be due to — 6biTb o6yc;ioBJieH- HblM, 51BJI5ITbC5I CJieACTBHeM due to prp BCJiezicTBHe due a 1. iioJDKHbift, HanJieacauiHft;

2. 06ycji0BJieHHbiA due to the fact — 6;iaroiiapfl (JjaKTy in due course — b cBoe BpeMH

2. ripoBepbTe, KaK Bbi 3ariOMHMjiM cjioBa.

3.12. llpoBepbTe, KaK Bbi 3anoMHHJiH cjioBa.

(1-10): the lattice of the substance, to be tightly bound, to be at an in­termediate stage, to fill the gap, the top band, below the level

(11-20): a poor design, to pose a question, to improve the state of art, the former technique, to substitute the mode existing, the interior of the package, an adjacent substrate

(21-30): to insert an atom into a silicon lattice, to create deficiency of the electron, to handle the material under ordinary cir­cumstances, efforts can merely help to carry out the pro­gram, to transfer from one state into another, to be protect­ed by surface layers

(31—40): a sequence of masks, to delineate multiplicity of «-type re­gions, to be exposed to diffusion, at various stages of the pro­cess, very precise calculations, photolithographic procedures, to dissolve the salt, to prevent the excess

(41—50): an etching acid, to denote the scale, the bulk of work, the bulk of a semiconductor, to establish a new industry, harm­ful effects, the removal of acid traces

(51—60): a wafer can be sliced, to substitute by sophisticated devices, to need continuing innovations, advances in crystal growth technology, a crystal pulling equipment emerged, the depo­sition of thin films by sputtering, the outline of a circuit

(61-70): to generate new species, to yield volatile compounds, to have intricate three-dimensional architecture, the aid of comput­ers, to simulate operations

13. HaHaHTe b tckctc anrvnuicKHe 3KBHBajieHTbi cJicziyiomHX pcHeBbix OTpe3KOB:

1. o6pa6oxKa nonnoxKH — HenpocTOM TexH0Ji0rH4ecKMH npouecc

2. (J)M3MHecKaH npwpofla noJiynpoBOflHHKOB

3. CB060AHbie HOCHTeJIM 3apRHOB Moryr B03HHKaTb npM MMHHMaJLb-

hoh 3aTpaTe 3HeprnH

4. KpHCTaJIJT HMCTOrO KpeMHMH — nJIOXOH npOBOjUHMK

5. yjiymueHne np0B0^HM0CTM ^ocTMraeTcn HecKOJibKHMH cnoco- 6aMM

6. K KpeMHWTO A06aBJlHK)TCfl npHMeCM, 4T06bI C03.fl.aTb ocoGbift TWn npOBOZLMMOCTH

7. AbipKa — 3T0 OTCyTCTBHe 3JieKTpOHa

8. npHMeCM MOryT BBO,UMTbCfl AH(J)(J)y3MeM

9. B03^eHCTByH OKMCJIMTeJieM

10. KMCJIOpOA BJIHHeT Ha MliOrHe CBOHCTBB nO^JIOXKH H3 KpeMHHH

11. 3nHTaKCHH — BbipaLUMBaHHe KpHCTaJIJlOB B COHeTaHHH c npo- UeCCaMH OKHCJieHHfl H ^MCj)(t)y3HH — AaeT B03M0/KH0CTb C03Aa- hmh 6ojibiiioro KOJiH4CCTBa pa3JiM4Hbix CTpyKTyp MC

13. IlepeBeiXHTe nHCbMeimo co cjioBapeM BTopyio nacTb ocuoBHoro TeKCTa (II). Bpe- mh nepeBo^a — 60 mhhjt.

2. YHMTecb KpaTKO M3/iaraTb coflepwamie TeKCTa.

15. KpaTKO H3Ji02KHTe na anrjiHHCKOM snbiKe co/iep/KauHe ochobhoto TeKCTa. Hc- no^b3ywTe cjie^yiomMc BbipaAeiina (Bbinojiiuieicfl iiHCbMCHHo):

The text deals...

It is arranged as follows ...

The first paragraph introduces ...

The second paragraph advances the idea of...

In conclusion ... is given.

Btopoe 3ahhthe Pa6oTa b ayAhTopnn

1. IIpoBepbTe AOMamHee 3aAaHne.

1. IIpoBepbTe nHCbMeHHUH nepeBOA BTopofi nacTH ocuoBiioro TeKCTa.

2. IIpoBepbTe ynpa^nenHH (BwGopoMiio).

3. IIpoBepbTe, KaK Bbi 3anoMHHJiH cjioBa (Bbi6opo4iio).

4. UpoBepbTe ycTHoe H3JioxeHHe nepBoft hucth ocHOBHoro TCKCTa.

2. YHMTecb nepeBOAHTb.

15. IlepeBeAHTe ycnio, yMHTUBan ocoGennocTM nepeBoaa cKa3yeMbix.

1

1. There is a continuous demand for improved metallurgical con­tacts in semiconductor devices.

2. The junction becomes vulnerable to diffusion between the metal layers and silicon.

3. The tremendous interest in small device structures is presently active due to the increasing requirements for obtaining very small circuit elements.

4. The size requirements are becoming increasingly severe.

5. Today, the technology is evolving at an ever-increasing speed.

6. The selection is of primary importance.

7. Increase in the packing density and also the complexity of these devices are primarily due to scaling down of the individual cells.

8. Line width gets narrower.

9. One of the primary considerations is to obtain a material with high electrical conductivity and low ohmic contact resistance.

10. These parameters are to be maintained throughout the high temperatures.

11. The material is to have resistance to the corrosion and oxidation.

12. Films of this thickness are likely to be very difficult to deposit in a continuous manner.

2

1. The most highly conductive film reported today was obtained by a metal-rich concentration.

2. Films produced by sputtering both exhibited a tetragonal crys­tal structure.

3. The resistivity of the MoSi film was found to be less than that of polysilicon.

4. The temperature for recrystallization to obtain the lowest pos­sible resistivity in effect is controlled by impurities.

5. The films used were found to be mechanically strong.

6. The film composition changed with time due to the different sputter.

3

1. Polysilicon has been the dominant interconnect material.

2. The plasma-etching process has been shown to have important advantages in terms of cost.

3. The phosphorus concentration had no influence on the resis­tivity of the film.

4. The control method has only recently been applied to the design.

5. There have been no directly comparable projects.

6. Any potential microprocessor user now has to make a choice from plenty of ICs.

TeKCT 3.1 B

IlepeBeflHTe TeKCT ycTtio (c JiHcra) 6e3 CJiOBapn. 3HancHHe Bb^cjieHHbix cjiob bm cmo-

JKeTe ITOHHTb H3 KOHTCKCTa.

BapwaHT 1

Laying Down Thin Film

Most often, thin-film deposition on a ceramic substrate is done in a vacuum chamber by evaporating or sputtering conductive, resistive, or dielectric material on a carefully cleaned substrate.

The vacuum prevents oxidation and allows the molecules of ma­terial being deposited to travel to the target with minimum collisions with gas molecules.

BapnaHT 2

Evaporation and Sputtering

In the case of evaporation, the material to be deposited is heated by a resistive heating unit until the molecules acquire the thermal energy necessary to leave the surface at a suitable speed to ensure deposition.

Sputtering differs from evaporation in that an electrical field ac­celerates the positive gas ions toward a cathode that is covered with a material to be deposited. An ion striking the cathode causes a mole­cule to be ejected and deposited on the substrate.

TeKCT 3.2 B

IlepeBeAHTe tckct iLHCbMCHHO 6e3 cjio&apn. BpeMH nepcBO^a — 15 mhh>t. IIpoBepbTe nepeBOA b ay/uiTopHH.

BapwaHT I

Rapid Thermal Processing

RTP is one of the exciting new wafer fabrication technologies. Its origin can be traced to the laser annealing (oTXHr) research of the ear­ly 1980’s, but it is only with the very recent appearance of techniques and equipment suitable for use in production that the technique has begun to attract serious attention of process engineers.

Current applications for RTP include ion implant annealing, glass reflow, silicide formation, and deposition of thin gate oxides. The RTP equipment market is expected to have one of the highest growth fac­tors in the equipment industry.

BapHaHT 2

Tungsten

Tungsten is of particular interest in IC technology because it can be deposited in a self-aligning (caMocoBMemeHHbin) chemically se­lective manner on silicon, metals, or silicides. Its volume filling capa­

bility serves to enhance planarity, a high priority in multilevel chip de­signs, and because it can be deposited without additional masks, pro­cess complexity is reduced with savings in cost.

Selective low-pressure chemical vapour deposition (LPCVD) of tungsten can provide diffusion and etch barriers via fills, low resistance source, drain and gate shunts, masks for X-ray lithography and many others.

The last years have been a time of rapid progress in LPCVD tung­sten technology.

3. YhmTecb aHhotMpoBaTb m pecfrepMpoBaTb tckct. TeKct 3.3 b

а) IlpoHHTaHTe TeKCT. BbiflBHre 0CH0BHyi0 HH<}>opMauHK) Kaxuioro a6jaua. 3ann-

LUHTe ^aHHyio HH(}>opMaiiHK> (b BHiie no/uejKamero h CKa3yeMoro) Ha pyccKOM

513BIKe. IIpOBepbTe npaBhjIbHocTb IlOhhMaHHfl TeKcTa.

б) CocTaBbTe KpaTKHH pecJ>epaT Ha aHiviHftcKOM jbwkc.

Dry Process Technology

LSI technology has been the cutting edge of the innovate semi­conductor industry. In the field of the process technology, much effort has been made to improve microfabrication and thinner-film formation technology. In particular, improvements in photolitho­graphic and etching techniques are the keys to the integration of more devices on smaller chips, increases in circuit performance, and improvement in wafer process yield.

Dry etching technology represents a new and exciting method for defining precise images in insulators, semiconductors, and met­als. Gas plasma etching technology in dry process like RF sputter­ing, ion beam milling, reactive ion etching, and reactive ion beam etching is widely used as a fundamental tool for the fabrication of MOS, bipolar LSIs, discrete devices and hard mask. It results in improved image size, simplification of the manufacturing process, precise shape control of fine patterns, and development of a clean-

er manufacturing process, compared with conventional wet chem­ical etching processes.

Recently, MOS LSI has shifted from LSI phase to VLSI phase, which requires a precise pattern less than 3 pm. This transition can be achieved by progress in wafer process technology, including mi­crofabrication as well as device and circuits design technologies. Conventional plasma etching is not adequate in VLSI regions for the delineation of precise patterns because of its inherent under­cutting (noATpaBJiMBaiomMM) effect which results in anisotropic pro­file of an etched pattern.

Dry etch technologies available for LSI processing are classi­fied into plasma etch, sputter etch and ion beam etch, with items such as etch mode, apparatus and reaction mechanism.

4. YHMTeCb rOBOpMTb.

17. 3aaattTe 10 BonpocoB (yctho) no co/iepxaHHk> ochobhoix) tckct a.

IVfnbi BonpocoB:

1. What is the (nature, difference, process, role, importance, etc.) of... ?

2. What is referred to as ... ?

3. What is used as ... ?

4. Where do we use ... ?

5. What function do the holes play?

BHeayflHTopHan pa6oTa

1. IIpoBepbTe, 3HaeTe jim Bbi cnoBa.

17. Ha30BHre chhohhmm cjieAyioiuHX cjiob (bu mojkctc HawTM hx b ochobhom TeKcre):

1. matter, material n 6. location, spot n

2. compact, fixed, set a 7. place, position n

3. peak, cap n 8. empty, unoccupied a

4. bad, cheap a 9. exchange, replace v

5. convey, transport v 10. shield, defend v

17. riepeBeflHTe oejiyiomHe peneBbie orpe3KH m3 ocuoBHoro TeKCTa:

1. to raise from the top to the bottom

2. the electron may be tightly bound to atoms

3. conductivity poses a problem

4. to improve the resistance

5. modest expenditure of energy

6. the dopants are diffused into semiconductor crystals

7. to expose the wafer to an oxi­dizing atmosphere

8. to remove the coating

9. to protect from harmful effects

10. advances in technology

11. the deposition of thin films

12. to provide precise dimensions

13. to select the areas on a wafer

14. to involve the use of a glow dis­charge

15. to specify the pattern of each layer

17. Ha30BHTe TepMMii, hcxo/ih H3 cjie/iyioiiiHX onpe^ejieiiHH:

1. The process of introducing impurity into the crystalline structure of pure silicon.

2. Any substance added in the doping process, such as arsenic.

3. A patterned plate used to shield sections of the silicon chip sur­face during the manufacture of integrated circuits.

2. llpoBepbTe, KaK Bbi yMeeTe onepupoBaTb rpaMMaTMnecKMMM m xieKCMHecKMMM HBJieHUHMM npM nepeBOAe.

TeKct 3.4 b

riepeBe;inTe tckct co cjiOBapeM nucbMeiuio. 3Ha'ieiiHfl BbiAeJieiiiibix cjiob Bbi CMOxeTe nonsiTb M3 KOHTeKCTa. (hamaBbTe tckct.

An integrated circuit is comprised of a single silicon chip containing transistors, diodes, resistors and capacitors, suitably connected to form a complete circuit. The first successful attempt to produce an integrated circuit, in 1959, made use of mesa construction, but this method is known to be quickly replaced by the use of planar techniques.

The important feature of the planar process is the deposition of a silicon dioxide layer on the top surface of the epitaxial wafer, which acts as a mask against diffusion. The process involves exposing the wa­fer to an oxygen atmosphere at high temperature.

After the oxidation process it is necessary to etch holes in the ox­ide, through which diffusion can take place. The process used is simi­lar to that employed in the manufacture of printed circuit boards. Ini­tially, the oxidized surface is coated with a thin film of photo-sensitive emulsion (photoresist). A mask is manufactured, the pattern of which defines the area to be etched, it being opaque (Henpo3paqHbiH) where etching is to be performed and transparent where the oxide is to be retained. The mask is brought into contact with the wafer and exposed to ultraviolet light. The photoresist under the transparent area of the mask being subjected to the light becomes polymerized and is not af­fected by the trichlorethylene developer which is subsequently used to dissolve the unexposed resist. When fixed, by baking (0T>KHr), the re­maining photoresist protects the oxide from the window where diffu­sion is required and, after the surface has been cleaned, the chip is ready for the first diffusion process.

For a p-type diffusion the most generally used dopant proves to be boron. This is deposited on the wafer at high temperature, and dif­fuses through the window into the silicon. A p-type region is thus cre­ated. The oxidization treatment is now repeated and, in this high-tem- perature process, the open window is sealed with an oxide layer and the base dopant is driven deeper into the silicon. A new mask is used in a second photoresist and etching stage, which opens a window for the diffusion of the emitter region.

For H-type diffusion the most generally used dopants are phospho­rus and arsenic. The cycle is supposed to be repeated yet a third time. The emitter window is sealed by oxidization, the emitter dopant is driven in, and new windows are etched in the oxide layer to defme the contact areas. Finally, the contacts are made by the evaporation of aluminium.

In practice many devices are manufactured at the same time on a single sheet of silicon. These are separated by scribing with a diamond stylus and breaking into individual chips. They are then mounted in suitable packages which allow electrical connections to be readily made and power, dissipated as heat, to escape.

It is necessary to be able to electrically isolate individual devices from each other. This is done by surrounding each component with material of opposite polarity and reverse biasing the semiconductor junction so formed.

TeKCT 3.5 B

riepeBeuMTe TeKCT nHCbMemio 6e3 cjioBapn. 3naHenHe BbiaejieHHbix cjiob bu CMOiKeTe noHHTb 6e3 cJioBapn. Bpcivm nepeBo/ta — 15 MHHyT.

High Pressure Oxidation of Silicon

Silicon oxidation has been a fundamental process of silicon de­vice technology for a long time. However, an understanding of oxida­tion methods and the phenomena involved is far from complete. An oxidation method that has received increased attention over the last few years is a high pressure oxidation method. This method is known to offer a practical means for thermally growing silicon oxides at lower temperatures and faster rates than those grown in conventional wet (BJiaxHbifi) oxidation. Presently, efforts to implement low temperature processes have become a significant driving force in the evolution of silicon device fabrication technology. The lower temperature aspect of high pressure oxidation has its greatest potential impact in the high density world of submicron VLSI where improvements in process con­trol precision will have a significant effect on performance and yield.

Thin oxide film grown at low temperature by high pressure oxi­dation has excellent dielectric breakdown strength.

Developments in high pressure oxidation will become more im­portant with progress in other low temperature processes such as ion implantation, laser annealing, and plasma enhanced technology dur­ing the next few years.

3. NpoBepbTe, KaK Bbi yMeeTe aHhoTnpoBaTb mjim pecJjepupoBaTb

TeKCT.

TeKct 3.6 b

Eerjio npoHHTaiVre tckct. Citaxurre, hto aBTop roBopHT 06 yHHKajibHocTH MoneKyjiflp-

HOft 3JieKTpOHHKH.

Molecular Electronics

Molecular electronics is a new concept of electronic systems. Basically, it seeks to integrate into a solid block of the material the

functions performed by electronic circuits or even whole systems. Its goal is to rearrange the internal physical properties of the solid in such a way that phenomena occurring within or between domains of mole­cules will perform a function ordinarily achieved through the use of an assembly of electronic components.

Molecular electronics is the most forward-looking of several mod­em approaches to the development of small, reliable, efficient electron­ic systems. Almost all of them attempt to perform the required electron­ic functions in solid semiconductor-type materials. Molecular electronics, however, is unique in its goal of going away with the tradi­tional concept of circuit components. Should this goal be fully realized, or even partially so, it would extent the capabilities of electronic systems well beyond that which can be achieved today. In addition to lowering size and weight, increasing reliability and reducing power requirements, molecular blocks could make possible the execution of tasks now too complex to be performed economically by conventional methods and permit the performance of electronic functions which cannot be achieved at all with lumped (oxnejibHbiM) components.

4. LlpoBepbTe, KaK Bbi cyMeeTe nepeBecTm flai-moe ctmxotbopohiio. TeKct 3.7 b

IlpoHHTaHTe 0TpbiB0K H3 cTHxoTBopciiiifl “Chip Fabrication”, Haiincannoro oohhm H3 pe^aKTopoB wypttajia IEEE Transactions on Electron Devices. J^aMTe noflCTpoHHbiH (h.ih CTHXOTBopHbiti) nepeBOA.

Chip Fabrication

We use an essential trick

With gallium and arsenic

To make the crystals that we need;

A fabrication line to feed.

We heat them up until they fuse,

A pressure cooker’s what we use.

We put a perfect crystal in And then we draw it out again.

And so a bigger crystal grows For hours and hours and no one knows Exactly what it’s going to be Until it’s finished. Its O.D.

Is constant or approximate.

And some of us can hardly wait Until to cylinder its ground And cut in slices almost round And polish till you see your face.

Of any defects there’s no trace.

And now the part the growers hate,

Wfe have to start to fabricate.

5. YHMTecb roBopnTb.

3.21. OTBeTbTe pa3Bepiiyro Ha CJie^yiomHc Bonpocu:

1. What is the physical nature of semiconductors?

2. How does semiconductor behave at lower than room temperatures?

3. Why is a crystal of pure silicon a poor conductor?

4. What is the process of doping?

5. In what ways are the areas to be doped defined?

6. What are the main dopants?

7. What role do the holes play in the conduction process?

8. What particles are the carriers of electric current in a p-type semi­conductor?

9. What is the simplest semiconductor device and how does it operate?

10. What technological processes are used in the fabrication of inte­grated circuits?

11. What is understood by the planar technology?

12. How are the problems of tighter control of impurity diffusion solved?

13. Which techniques are referred to as direct methods of film prepa­ration and which of them as indirect? (Describe briefly each of the techniques used.)

14. What makes the automation of crystal growing equipment a ne­cessity?

TpeTbE 3ahhthe

KoHTponb M3yneHHoro MaTepuaxia

1. KoHTponb nepeBOAa ocHOBHoro TeKCTa.

BwnoJiHfleTCfl ycnio (BbiGopo'ino).

2. KOHTpOJlb CJIOB B CJlOBOCOHeTaHMflX.

BbinojiH)ieTC5i ycnio hjih nHCbMetwo (no Bbi6opy npcnonaBaTejm).

3. KoHTponb yMeHMH BbmBrmTb 3HaneHMn cjiob c yneTOM koh- TeKCTa.

   22. nepeBemrre, BkiRBJinn KOHTeKCTyajibHoe 3na'ienHe BbwejieHHbix cjiob due to, appear, advance’.

1. The numerical value of the conductivity changes due to the con­centration of impurities.

2. The significance a semiconductor achieved is due to the electrons being raised to the conduction band.

3. Current due to holes injected into the collector from the base can be neglected since it is very small.

4. New design tools and development systems are appearing.

5. The limiting point appears to be between 10 and 30 ohms.

6. Recent technological advances in software development are now opening new horizons.

7. The advances made by device fabrication have allowed all func­tions to be integrated into just one chip.

22. BbiflBHTe KOHTeKCTyajibHoe 3HaieHHe Bbuejieimwx cjiob 6e3 cjiOBapn:

1. More efficient communication demands a continually increasing level of control in progressively-thinner layers.

2. The extension of any semiconductor technology to small dimen­sions brings with it a host of new technology, physics and engi­neering challenges.

4. KoHTpo/ib yMeHun nepeBOflMTb.

TeKct 3.8 b

nepeBezurre ycTHo tckct c jiHcra noa pyK0B0HcTB0M npenoxuBaTe^H.

Submicron Technology

Silicon is the workhorse for most integrated circuit devices. Sili­con processing technologies continually change. A number of techno­logical changes must be expected with the advent of electron beam mask-making, i.e. with the development of submicron technology to produce ultra-complex devices based upon dimensions which can no longer be fabricated with the use of visible or near visible light.

The need for submicron technology is based upon conti nuing pres­sures to improve microelectronic capabilities. The present optical meth­ods are reaching their limits. The increasing sophistication of elec­tronics systems continually pushes the state-of-the art of both memory and logic circuits. Improvements in cost, speed, density and power consumption are being sought.

Submicron technology refers to the fabrication of semiconductor devices with features having masked dimensions less than one micron. Normal IC technology uses mask dimensions of about five microns. By using electron beams, it is now possible to fabricate circuits with features less than one micron. Within the next few years submicron technology will become a major factor in the production of integrated circuits.

Because of the small dimensions required, it is no longer possible to use conventional optical methods to define the surface of an integrat­ed circuit. Even optical inspection is limited because of the small di­mensions. In place of light, X-rays and electron beam are used to pat­tern the surface of the semiconductor wafer.

In the same manner as the electron microscope provided superior resolution over the optical microscope, electron beam technology is about to impact the integrated circuit industry. The advantage of e-beam tech­nology is that the wavelength of electrons is substantially less than the wave­length of light. E-beam technology is accompanied by the use of X-rays. X-rays have the advantage that they travel in a straight line. X-rays do not require vacuum as do electrons, which may simplify production techniques.

The use of submicron technology has the same effect as increas­ing the size of the silicon wafer. Since the devices are smaller, the num­ber of devices per wafer is greater. Also, since the die sizes are smaller, the loss due to a die containing a material defect is smaller. The yield percentage increases. The net effect is more good dice per wafer. As is known, one of the basic measures of semiconductor performance is the number of good dice per wafer.

Submicron technology can be used for standard 1C design and processing. It can be applied to both MOS and bipolar integrated cir­cuits including injection logic. This technology applies to very fast cir­cuits and microwave structures.

The impact of submicron technology on the IC industry will be more significant than the impact of MOS on the semiconductor in­dustry. A principal application impact of submicron technology will be in the areas of magnetic bubble and semiconductor memories. Al­though, the first submicron production structures range about 64 kilo­bits, “million-bit chips” are possible. The super-LSI technology ap­pears in new products where increased complexity can still be utilized. The one-chip medium-size computer quickJy becomes a reality in con­junction with its one-chip memory or, alternately, a minicomputer will tend to have everything in one chip.

The utilization of submicron technology requires a completely new facility. All aspects of mask making, inspection, and other proce­dures are changed.

5. KoHTponb yMeHMfl aHHOTMpOBaTb M pe$epMpOBaTb.

TeKct 3.9 c

npoHHTaflTe TeKCT. Pa3AejiHTe ero Ha afoaubi h 03arjiaBbTe hx. Hcno.ib3yHTe 3arojioB- kh b KanecTBe ruiaHa zuih nepecKa3a TCKCTa.

Optical Lithography

Optical lithography has undisputably been the leading integrat­ed circuit pattern defining technique for many years. It has essen­tially two steps. First, the design and fabrication of the optical mask,

which is both costly and time consuming, and secondly, the expo­sure of the wafer, covered with a layer of light sensitive photoresist to ultraviolet light shone through the mask. The method is ideal for large scale production because once the expensive maskmaking pro­cess has been carried out, an unlimited number of wafers may be patterned at very low cost to the producer. On the other hand, where specific or semicustom (nojiy3aKa3Hbie) lCs are concerned this pro­cess has proved unacceptable since the cost and time involved in mask fabrication cannot be justified by the production of only a few devices which may require several interactions for optimum results. For these reasons, electron beam direct-write lithography is prov­ing invaluable in the field of application of specific or semicustom integrated circuits. This technique allows fast turnaround, a high flexibility and comparatively low cost for very small batches. In ad­dition, the short wavelength of electron-beam offers very high res­olution patterning and so may be essential where sub-micron fea­tures are required. Despite the possibility of low throughout, e-beam generated patterns allow either simple wafer-scale integration or devices for several customers, each possibly with a variety of trial designs to be implemented on a single wafer. The major advantage of the e-beam’s high resolution capability will be nullified if the resist pattern cannot be very precisely reproduced onto the metalli­zation layer. For this reason, wet-etching of the metal with its in­herent undercutting is particularly unsuitable and plasma-process­ing becomes necessary. Reactive ion etching is a type of plasma etching where the wafer is placed on an electrode which is capaci- tively coupled to an RF generator. A second electrode larger than this driven one is grounded and a plasma is generated by electronic excitation of a low pressure gas contained between them. The ar­rangement of the system is such that the driven electrode experi­ences a negative bias with respect to the plasma causing positive ions to be accelerated towards the wafer. This means that not only is there chemical reaction causing removal of the metallization but also ion-enhanced chemical etching and physical sputtering to the vertical etching essential for precise replication of the resist pat- tern. Dry processing has the added benefits of easily handled pro­cess materials, easy automation and good reproducibility.

6. KoHTpo/ib yMeHMn roBopnTb.

24. IIoiiroTOBbTe h c^ejiaiiTe coo6iuchhh no cjie^ywiUHM TewaM:

1. Film technology and semiconductor technology.

2. Silicon for microelectronics.

3. Oxidation and its function.

4. The techniques for the deposition of thin films.

TeKct 3.10 c

npoHHTafiTe TeKCT. M3Jio«MTe cboh BbiBOMbi o npeHMyiuecTBax np«5opoB na apceHHAe rajiJiHfl. Hcnojib3yn pwcynoK, onHiiiHTe npHHumi achctbha npn6opa. Ha 0CH0Be npo- HHTaHHoro h BauiHx 3HaHHH no cnemfaJibHocTH n0Ar0T0BbTe coofimeiiMfl o: a)TexH0Ji0- rHH n0Jiynp0B0AHHK0Bbix npnGopoB h MC; 6) hobmx iwaTepna^ax h hoboh TexHOJiorHH npoH3BOACTBa HC, EHC h CEHC.

Ill—V Semiconductor Integrated Circuits

III—V semiconductors attract the attention of scientists and man­ufacturers working in the field of microelectronics. This interest is based upon the ability of these materials to satisfy a wide variety of needs.

Technological applications include high speed processing, com­munications, sensing and imagining, and many others. Integrated circuits with various combinations of MESFET, JFET, bipolar, Gunn, Schottky diode, laser diode, optical detector, light guide, acoustic wave, and other assorted functions are being explored, developed and utilized.

One of the first large-scale applications of III—V semiconduc­tors was light-emitting diodes (LEDs) which are two terminal devic­es that emit light when a forward-bias current is passed through a p- «junction. An energy state and device construction is given in Fig. 3.

When an electron in the conduction band combines with a hole in the valence band, the energy is emitted as a photon and light is Produced. Of course, non-radiative combination processes and light ^re-absorption must be minimized for high efficiency. To emit light ^visible to the human eye, a band gap near 2 e V is necessary to pro- ^vide the proper photon energy, which produces red-green light.

Fig. 3

At the beginning of the 1970’s, the GaAs MESFET device was developed for use in circuits such as microwave amplifiers operating in the frequencies range from about 2 to 12 Ghz. The device is fabricated on a base of single-crystal semi-insulating GaAs. A GaAs film con­taining a closely-controlled concentration of n-type dopant atoms is epitaxially deposited on the GaAs wafer. The devices are completed by etching “mesas” or islands to electrically isolate the device and by add­ing low resistance contacts and a gate electrode. The gate length is typically 1 mm.

The first integration of GaAs MESFET transistors into logic gates was done in 1974. These gates have been integrated into gated flip-flop integrated circuits and used for prescalers and time-interval measure­ments. These GaAs integrated circuits operate at substantially higher speeds than silicon ICs because of a combination of higher transcon- ductance due to higher substrate resistivity. The higher substrate resis­tivity in GaAs is a result of its larger bandgap. Semi-insulating GaAs material naturally provides device-to-device electrical isolation.

Digital capability in GaAs has passed from the SSI (small-scale integration, ~ 10 gates) realm into the MSI (medium-scale integra- tion, ~ 100 gates), and is headed for LSI (large-scale integration, ~ 1000 gates). Fabrication of an 8 x 8 bit parallel multiplier (1008 gates fabri­cated from approximately 6000 transistors and diodes) has been re­

cently reported, which is the most complex GaAs integrated circuit reported to date.

GaAs 1C technology is being developed to meet important system needs. Advanced systems are faced with challenges which require signifi­cant advances in the rate of real-time signal. At attractive objective is to convert analog microwave signals to digital format in a high-speed A/D converter as close as possible to the microwave receiver front, and then to process the data digitally. The bandwidth which can be achieved in GaAs should be capable of permitting digital processing of microwave signals including A/D conversion to become a reality.

PA3AEA METBEPTblil

Ocmemu mencm: Computer As It Is.

TpaMMamunecKue R8AeHun\ Tnnbi 06cT0flTejibCTB. Cnoco6bi hx BbiHBJie

hhh BTeKCTe h nepeBOii.

JleKcmecme nexenim: KoHTeKCTyajibHoe 3HaqeHHe cjiob run, handle

background. FlepeBOii cjiob c npe(})HKcaMM extra-, trans-, co-, pre-, post-.

Iiepboe 3aHflThe

Pa6oTa b ayflMTopMM

1. RipoBepbTe, 3HaeTe jim Bbi cjieAytoujiie cjioBa.

CjIOBa, HMeiOlUHe OAHHaKOBklft KOpCHb C pyCCKHMH CJIOBaMH

manipulate v integral a collect v extraordinary a

position n trajectory n hierarchy n manufacturing n

segment n instruction n memory n bank deposits

central a control v interpret v

CjioBa HCXOAHoro ypoBiifl h H3 npeAmecTByioiuHX pa3AeJioB

tool n complex a brain n entire a advances n boundary n design n process v similarity n act v single a purpose n aid n accept v response n capability n perform v rapidly adv unit n respond v expand v velocity n existence n essential a require v measure v

2. YMMTecb nepeBOAMTb.

4.1. llpoBepbTe, KaK Bbi yMeeTe ono3HaBaTb h nepeBo/jHTb o6crojrreJibcTBa. riepeBe- 4HTe peneBbie orpe3KH, b Koropwx:

Hh(J>HHHTHB — 06CT0HTeJIbCTB0 1

1. To manufacture silicon microcircuits, well-defined specifications should be observed...

2. To improve the resistance and delay times, the designer pays at­tention to...

2

1. In order to (diffuse the semiconductor crystal, we add ...

2. In order to obtain pure silicon, it is necessaiy...

3

1. ... so as to make the diode conduct...

2. ... so as to substitute dopant atoms for semiconductor atoms ...

OpHHaCtMe I — 06ct0flTe;ibCtb0 1

1. When depositing the material, care should be taken...

2. When inserting an atom into the silicon lattice, we create ...

2

1. While processing the data, the computer makes ...

2. While comparing the circumstances, they noticed that...

3

1. Processing a wafer of silicon, we used ...

2. Having processed a wafer of silicon, we used...

3. Having transferred an electron, the adjacent atom creates a new

hole.

4

1. Being protected by surface layer of silicon dioxide, the adjacent areas can block...

Being exposed to diffusion, the microscopic regions can be de­fined ...

IlpHMaCtHe II — 06cT0hTeJIbCtb0 1

1. When cooled, the metal provides ...

2. When etched, the silicon dioxide demands ...

2

1. If doped with phosphorus or other pentivalent element, silicon is called...

2. If coated with a photosensitive organic compound, the surface of the silicon dioxide can change ...

3

1. Although accepted for different purposes, the computers have the same...

2. Although used for etching, an acid can be applied to ...

4

1. Viewed from space the Earth seems...

2. Based on reactive gas plasma technology, the semiconductor in­dustry can ...

5

1. As previously pointed, there exist two lines of development.

2. As already stated, oxygen concentration influences many silicon wafer properties.

re py HUH ft — ofiCTOHTeJlbCTBO 1

1. In obtaining the possibility of change the designer can face ...

2. On obtaining the possibility of change the designer could attack...

2

1. Without forming high frequency transistors and integrated circuits the engineers could not...

2. By doping the semiconductor we can ...

3

1. In spite of being charged the particles can be used to ...

2. In addition to creating insulating areas, oxidation offers a practi' cal method...

3. In view of deciding what semiconductor process should be em­ployed ...

HapeMmh tHna economically — 06cT0JrrejibCtb0

1. CPU must be simple enough to be built economically.

2. Suppliers of hardware and software have to dramatically cut de­sign and development lines.

3. Besides, suppliers typically need to adequately test and develop reliable components.

4. Several basic vehicle requirements mechanically govern CPU ar­chitecture.

   2. npomiTaftTe h nepeBeaMTe, oGpamaa BHHMaHHc Ha pa3Hbie maMCHHH as:

1. as a result of advances

2. as an example of innovation

3. as a consequence of the deposition of thin films

4. as a matter of fact, a semiconductor is intermediate between insu­lators and conductors

5. as far as the interior of the crystal is concerned ...

6. as far as they use poor conductors ...

7. as long as oxidation has been a key-stone process of silicon device technology...

8. as soon as plasma etching was used ...

9. as much as possible

10. as thin as possible

11. such as

12. as follows

13. as distinguished from the tube

Ochobhom tekct

riepeBeAHre ycTHO c JiHcra nepByio MacTb ocHOBHoro TeKCTa (I) no/i, pyKOBOXi-

ctbom npenoAaBaTe.m.

OepeBeAHTe imcbMeHHO co c;ioBapeM BTopyio wacTb ochobhopo TOKcra (II). Bbi- nojiHHeTCJi caMocTOHTc.ibHo KaK AoMauiHee 3a#aHHe.

3. ChiiaKOMbTecb c TepMHHaMH ocHOBHoro TeKCTa:

assembler language — acceM6.nep running time — BpeMH pa6oTbi database processing tools — cpcfldBa o6pa6oTKM 6a3bi flaHHbix distributed-processing system — chctc Ma o6pa6oTKM c pacnpcAejiemicM

to digest and analyse measurements —

o6o6maTb h aHa_nH3MpoBaTb imiepe-

HHfl

central processing unit — Liny to issue commands — 3a^aBaTb komsh-

1. The word “computer” comes from a Latin word which means to count¹.

Initially² , the computer was designed as a tool to manipulate num­bers. Although designed originally³ for arithmetic purposes, at present it is applicable⁴ for a great variety⁵ of tasks⁶. Computers are now an integral part of our day-to-day lives. Today it would be difficult to find any task calling for⁷ the processing of large amounts⁸ of information that is not performed by a computer. The computer may be stated to have become an important and powerful tool for collecting, record­ing⁹, analysing, and distributing¹⁰ tremendous masses of information.

In science, computers digest¹¹ and analyse masses of measure­ments, such as the positions and velocities of a spacecraft and solve extraordinary long and complex mathematical problems, such as the trajectory of the spacecraft.

In commerce^I2, computers record and process inventories (Ha- jTHHue TOBapoB), purchases (noKynKH), bills, payrolls (ruiaTexHan Be jxoMocTb), bank deposits and the like¹³ and keep track¹⁴ of ongoing business transactions^l5.

In industry, they monitor¹⁶ and control manufacturing processes

In government, computers keep statistics, analyse and distribute information.

Computer technology has made dramatic strides¹⁷ in application of virtually⁵⁸ every segment of a modern industrialized culture, from product design and manufacturing, through sales^l9, warehousing (cKJia- AnpoBaiiHe) and distribution. Nowadays computer-aided design can no longer be separated from computer-aided manufacturing, they are one and the same. Hence, the acronym, CAD/CAM. The list of ap­plications is large and growing rapidly.

To many people, the computer is a superhuman robot. Indeed \ it can perform lighting-fast calculations and can perform billions of

operations in a second. But the computer is not superhuman for it can accomplish²¹ none of these things by itself. Every computer now in ex­istence must be told what to do: it must have a set²² of instructions. These instructions are called a program. The writing of these instruc­tions is called programming. Programming is done by a man.

Surely²³, there are similarities with human brain, but there exists one important difference. Despite²⁴ all its accomplishments, the elec­tronic brain must be programmed by a human brain.

Although accepted for different purposes, computers virtually do not differ in structure. Regardless of²⁵ their size or purpose most com­puter systems consist of three elements: the input-output ports²⁶, the memory hierarchy and the central processing unit.

The input-output ports are known to be paths (KaHajibi) where­by²⁷ information (instructions and data) is fed²⁸ into the computer or taken out of it.

There are several types of memory. Memory is essential to the computer’s operation. Items²⁹ of information can be written to, stored³⁰ in, retrieved³¹ from it on demand by the central processing unit, or erased³² to make room (mccto) for other information.

The central processing unit, or CPU, controls the operation of the entire system by issuing³³ commands to other parts of the system and by acting on the responses. When required, it reads³⁴ information from the memory, interprets instructions, performs operations on the data accord­ing to the instructions, writes the results back into the memory, and moves information between memory levels or through the input-output ports.

Advances in microelectronic components led to the development of smaller computers. In 1971 Intel. Corp. delivered the first micro­processor, the 4004. The central processing unit of a computer was put onto a single silicon chip less than 1/4 in square. When a central pro­cessing unit (CPU) of a computer is implemented³⁵ in a single, or very small number of integrated circuits, we call it a microprocessor. When a computer incorporates³⁶ a microprocessor as a major component, we call it a microcomputer. When the entire computer, including CPU, memory and input-output capability, is incorporated into a single IC, we call the latter a one-chip microcomputer.

The first design was followed by many others. The progress to­ward smaller computers is certain to continue: gradually there ap­

pear wcrto-computers and p/co-computers. These computers are more flexible³⁷. Modern computers are virtually symbiotic.

Advances in microelectronics give rise to advances in comput­ers. Computers today are providing an expanding range of services.

Computers are classified by size and capability as microcom­puters, mainframes³⁸ and supercomputers, depending on the size of their main memories and on their processing speed.

Most microcomputers are mostly used by individuals.

Mainframes are used by large corporations, government agen­cies (yHpeacaeHHfl) and other large institutions.

Supercomputers are the largest and fastest of all computers. They have memories and processing speeds that may be measured in pico­seconds (trillions of a second). The boundaries separating the cate­gories change frequently as computer technology advances.

2. If hardware³⁹ is the body of a computer then software⁴⁰ is its soul Cayrna). Software is the term applied to the sets of instructions called programs. The writing of these instructions is called computer programming.

Several developments have helped to reduce programming ef­fort. High-level languages have replaced assembler languages to a great extent. These high-level languages, however, require more compila­tion and running time, and more memory space. One of the most important causes of the man-machine communication barrier is that an interactive computer system typically responds only to commands phrased with total accuracy in a highly restricted⁴¹ artificial⁴² lan­guage designed specifically for that system. If a user fails⁴³ to use this language or makes a mistake, however small, an error⁴⁴ message⁴⁵ is the response he can expect.

There is a trend⁴⁶ towards languages with free format and more error checking⁴⁷.

Just as the hardware designer needs fewer components to build a system, the programmer needs fewer lines of code to make a system go. Many scientists are known to have been conducting a research on man-machine communication. The work is ongoing. Of particular interest are information systems that model complex real-world events.

Active information systems are database processing tools intend­ed⁴⁸ to represent and manipulate data description of large real-world systems that have a complex dynamic behaviour. It is apparent⁴⁹ that if the language of recipient and sender differs, the data of the mes­sage cannot be used.

In automated information systems the computers must receive and at the same time interpret and act on the data. In information systems, to be more explicit (TOHHee), the fields of computers and communications are merging⁵⁰.

Thus, the problem that hinders⁵¹ man-machine communication is language barrier. The computer system responds to commands only if they are given with total accuracy in a highly restricted artificial language. Without it an error message is the response.

Therefore, program optimisation is of crucial⁵² importance.

A certain language program often proves inefficient on another machine. A good deal of work is now being done on automated pro­gram optimisation. Machines with new architectures possessing highly parallel structures are now being designed and built. Parallel struc­tures including hundreds, even thousands, of processors are now be­ing designed and built. True, this software optimisation remains at the very early stage. What is needed? We need: (I) better algorithms;

2. better languages and operating systems; (3) better portability, so that software has a longer lifetime and can therefore sustain⁵³ more development; (4) better program optimisers.

Algorithms are especially important to take advantage of vector and microprocessor parallelism. Once we have designed algorithms, we must provide better languages to allow more efficient expression and execution⁵⁴ of these algorithms.

One does not wish to program all programs for all machines, es­pecially when it means reprogramming each program to get optimum performance. Other languages and programming paradigms should be portable (3d. Hcno;ib3yeMbie /urn Bcex bhaob K0MnbKyrep0B).

The potential for portable operating systems is obvious. But to achieve it requires much more progress in the areas of standards and optimisation.

True portability requires a high-level representation of algo­rithms, with no machine-dependent semantics.

Thus programming productivity becomes a more and more im­portant issue, which leads to the idea of sharing⁵⁵ programs across different hardware platforms to save time and cost on program de­velopment.

With the development of Internet and Wfeb computing (W-ceTb), the sharing of programs across heterogeneous platforms, the estab­lishment of an unified⁵⁶ programming and computing environment⁵⁷ across the fundamentally heterogeneous World Wide Wfeb become critical issues, which lead to the booming (sd. noHBJieHne) ofbrand⁵⁸ new programming languages such as Java. Another possible trend is the popularity of script⁵⁹ language on the Internet.

New programming languages that can support parallel and dis­tributed computing are in great demand. There are currently two approaches⁶⁰ to this special issue. One is to adapt⁶¹ currently avail­able popular programming languages, for example, C and Fortran, and equip them with special library. The results are parallel and dis­tributed programming languages like CC++, pC++, and HPF (High Performance Fortran). Another approach is to design con­ceptually new languages that exploit the fundamental principle of parallel and distributed computing. The results are programming languages like Linda.

Programming languages may be treated⁶² as useful vehicles⁶³ for gaining access to important distinctions⁶⁴ of computing.

Technological, economic and educational developments now al­low us to design information systems. Information systems model complex real-world events that have a complex dynamic behaviour⁶⁵. In automated information systems the computers must receive and at the same time interpret and act on the data. In information sys­tems, to be more explicit⁶⁶, the fields of computers and communica­tions are merging. The integration and coordination of the individu­al information systems and computers introduces new requirements, design parameters, and tradeoff⁶⁷.

These considerations⁶⁸ affect system issues ranging from the ar­chitecture of specific computers to the architecture of overall infor­mation systems.

The past couple of decades have seen tremendous progress in the technology of computing devices, both in terms of functionality

and performance. The versatility⁶⁹ and convenience⁷⁰ of the micro­processor has altered the entire architecture of modem computer system. The method of processing data as well as available peripheral devices define computer generations⁷¹.

The list of applications is large and growing rapidly.

Still there is a critical issue, that is the security of computers. Computer networks will always be vulnerable to attack. But there are ways to make a network much more resistant to attack.

Viewed72 in the contemporary scene and historical perspective the computer stimulates man.

3. RipoBepbTe, KaK Bbi 3anoMhm/iM cnoBa nepBort nacTm ochob- Horo TeKcTa.

2. IlepeBeAHTe BW^cJieHUbie cjioBa, ncxo,ifl H3 3HaHeHHft, npwBeneHHbix b CKoCkax:

1. countless a (SecHHCjieHHbin), count v

2. originally adv (nepBOHanajibHo), origin n

3. distribute v (pacnpeaejiHTb), distribution n

4. accomplishment n (BbinojinenHe), accomplish v

5. recording n (3anncb), record v

6. storage n (xpaHeHne), store v

7. issue n (HOMep, BbinycK), issue v

8. interpretation n (TpaxTOBKa), interpret v

9. flexible a (rn6KMM), flexibility n

10. implement v (BbinoJiHHTb), implementation n

11. fail v (0TKa3aTb), failure n

12. errors (ornnGKa), erroneous a

2. OnpeaejiHTe 3HawenM« aHrJiHMCKHx cjiob, hcxo/w H3 KOHTeKCTa:

1. KOMnbiOTepbi — complicated MauJHHbi

2. nejiOBeic Bceraa attempts no3HaTb npHMHHy

3. o6pa6aTbiBaTb 6oJibiUHe amounts of HH(J)opMauHH

4. KOMnbKDTep previously Hcn0Jib30BajxcH rjth counting

5. KOMnbiOTepbi monitor npoHSBOACTBeHHbiMn npoueccaMH

6. b HauiH flHH o6beM naMHTM KOMnbKDTepa is spectacular

7. transactions HayHHoro o6mecTBa 6ynyT 0ny6jiHK0BaHbi

8. regardless of pa3Mepa h Ha3Ha4eHH5i KOMnbiOTep coctoht m3

9. HH(J)opMauHH is fed hjih bbiboahtca nepe3 input-output ports

10. to issue KOMaHUbi b Ka^ayio CHCTeMy

11 .to implement AOBOJibHO npocTbie (J)yHKUHH

12. to fail BbinoJiHHTb 3ana4y H3-3a HexBaTKH BpeMeHH

13. 3Ta onepauHH consumes MHoro BpeMeHH

2. flcpeBCAHTe c.ie;iyiomHe CJioBa. 06paTHTe BHHMaHHe Ha 3Ha<ieHHfl npe<J)HKC0B extra— 6He, He-; trans— 3a-, nepe3~, mpaucno my cmopony\ co— eMecme; fore— neped, 3apaHee; pre— do, nped; post— nocne.

extra-: extraordinary a, extrasensory c, extraterrestrial a trans-: transaction n, transatlantic o, transform v co-: coexist v, coauthor n, cooperate v fore-: foresee v, foretell v, foregoing a, forerun v, foremost a pre-: preheat v, predetermine v, prehistoric a post-: postwar a, postdate v, post-graduate n

4. YnnTecb o6o6maTb MHct)opMai4MK) TeKCTa.

   6. 06o6mHTe HHtfcopMauHio, b nepBoft MacTM ochobhoix) TeKCTa (I): a) Ha

pyccKOM, 6) Ha anniHHCKOM H3biKe. BbinojiHHeTCH ycTHO.

5. YnnTecb cnyiuaTb n roBopnTb.

7. IIpocMOTpMTe eme pa3 nepByio MacTb ocuoBHoro TeKCTa (I). OroeTbTe Ha Bonpo- Cbl, HCnOJIb3)H HH(}K)pMaUMK) TeKCTa:

1. What is the origin of the word computer?

2. What were the first computers intended for?

3. What kind of a machine is the computer?

4. Why has man made extensive use of the computer?

5. What are the similarities of the computer with human brain?

6. What does the computer do in science, in commerce, in industry

and in government?

7. Why do we widely use the computer in spite of its high cost?

8. What do you know about the architecture of the computer?

9. What is a microprocessor?

10. What’s the function of the input-output ports?

FloMauiHee 3aAamie

1. rioBTopHTe cpe/iCTBa BupaweHHfl 06cT0«TejibCTBa h Bbinojiiiirre ynpa^KHeHHH.

2. Ii3yHHTe cjioBa h cJioBoconeTaHHH nepBoft qacTH ocHOBHoro TeKCTa (I).

3. IlepeBeAHTe nwcbMenno co cjioBapeu BTopyio MacTb ocHOBHoro TeKCTa (II). Bpe- M# nepeBozia — 60 mmiijt.

4. KpaTKo H3Jio>KHTe co/iepxaHHe BTopott MacTH ocuoBHoro TeKCTa (nwcbMeHHo Ha aHrjiH^cKOM »3biKe). OGteM Bamero hsjio/kchhh — 10—12 npocTbix npefliio-

JKeHHH.

BHeayflMTopHan pa6oTa

1. YhmTecb nepeBoamTb.

7. IlepeBeAHTe, oGpaiuaa BHHMaHHe Ha 4>opMy BbipaweHHH oocTOHTe.ibCTB:

1. The design effort necessary for assembling several dice within the same package was more easily and earlier achieved than the integration of several discrete components onto a single die.

2. Being quite different from vacuum tubes and transistors, ma- . sers operate entirely on quantum principles.

3. Using the same mask-making programs and machines as for silicon, we use photolithography to define the topology of re­sistors, capacitors and interconnections.

4. In order to shorten the time required to perform instructions, it is desirable to perform as many operations as possible in par­allel.

5. To be more economically competitive, more and more systems will incorporate micros.

6. By fabricating dozens of transistors together on a single small silicon chip, using the same fabrication techniques used for sin­gle isolated transistors, a whole flip-flop could be integrated.

7. Viewed from the outer space, the most striking feature of the Earth is the large expanse of water.

2. H3yHmTe cnOBa m cnoBOconeTaHmw ochobhoto TeKcTa.

1. Count V 1. ChhTaTb, noncHmTbiBaTb, 2. NojiaraTbca Ha

count n 1. noAcnei; 2. ennHHua non- cneTa

countable a MCHMCJifleMbift counter n chcthmk

2. initially adv BHanajie; mcxouho initials HanajibHbiW, ncpBOHa^ajibHbift initiate v 1. nojioacMTb Hanajio; 2. bo3-

HMKHyTb

3. originally adv CHanajia, nepBOHa- HaJIbHO

original a 1. nepBOHaMajibHbiii, mc- xonHbifi; 2 noiuiHHHbift originate v 1. iiaBaTb Hanajio, nopoac- naTb; 2 6paTb Hanaro

4. applicable a 1. npnMeHneMbiM; npn- ronHbiH, 2. no/Lxonflmnft, cootbctct ByiOLUM^

appliance n 1. npMcnoco6jicHMe; 2. ycT- poiicTBo, npn6op applicability n npnroflHocTb, npnwe- HflCMOCTb

application a 1. 3aHBJicHMc; 3a«RKa; 2, npocb6a, o6paineHne; 3. npnMc- HeHHe, HCn0Jlb30BaHHC application program package — naKeT npmoianHbix nporpaMM applied a 1. npnKJia^Hofi, npaKTMHe- CKMii; 2. npHJioxeHHbitt apply v 1. o6pamaTbCH c npocb6oft; nonaBaTb3aHBJieHMe; 2. Hcnojib3o- BaTb, npHMCHHTb; 3. npMoaiibi- BaTb

5. variety n 1. pa3Hoo6pa3He; 2. pail, MHoacecTBo; 3, bh^, copT

various a 1. pa3JiMHHbifl; pa3Hoo6pa3- hum; 2. MHorne; 3. pa3HocTopoH- HMtt

variously adv no-pa3HOMy, pa3JiH4HO variable a ncpcMCHHbiw; TeKyinnii variable n nepeweHHafl BCJiMHMHa; napaMeTp

6. task n 1. 3£UxaHa, 3aaaHMe; 2-iiejio pa6oTa; 3. o6fl3aHHocTb

task v 1. CTaBMTb 3a,na4y; 2. HcnbiTbi- BaTb, nonBepraTb npoBepKe task-oriented a uejieHanpaBJieHHocTb task group a MCCJieaoBaTejibCKan rpynna

7. call for v 1. Tpe6oBaTb; 2. npejiy- CMaTpMBaTb

call into action — npnBonnTb bachct- bmc

call n 1. Bbi30B, 3anpoc; 2. Tpe6oBa Hne, Heo6xo,HHMocTb; 3. cwrHaji call v 3anpauiMBaTb; Tpe6oBaTb call program — Bbi3biBaiomafl npo­rpaMMa

8. amount n 1. mnimecTBo, bcjimmm- Ha; 2, cyMMa, HTor; 3. aMmiMTyaa;

4. ypoBeHb, CTencHb

amount v 1. aoxoflHTb #o, nocTMraTb; 2. cocTaBJiHTb (cyMMy)

9. record v 1. 3anwcbiBaTb; 2. perncT- pMpOBaTb

recording n 3anncb

file recording — rJiaBHafl 3anncb

recorder n 3anncbiBaiomee ycTponcT-

BO

10. distribute v 1. pacnpe/icjiHTb; 2. pac- npocTpaHHTb

distribution n pacnpeflejieHMe defect-density distribution — paenpe- nejieHHe njioTHocTH ne^)eKTOB distributor n pacnpeaejimcjibHoe ycT POHCTBO

11. digest v 1. o6pa6aTbmaTb; 2. ycBan- BaTb, ocBaMBaTb; 3. BocnpHHHMaTb, OCMblCJTHBaTb; 4. KJiaCCM(})MUMpo- BaTb; aHHOTHpOBaTb; npHBOHMTb B CHCTeMy; 5. M3JiaraTb cacaTo digest n 1. c6opHMK, cnpaBOHHHK,

2. KpaTKOe M3JTOXCHHC, pe3iOMe digester n CHCTeMaTH3aTop digestable a jierKo ycBanBaeMbin

digestionn l.ycBoeHne; 2, noHHMaHHe

12. commerce/i ToproBJiH commercial n peKJiaMa, o6'bHBJieHMc commercial a 1. ToproBbitt, KOMMep-

^ecKHft; 2. noxonHbifi, npn6biJib- Hbift; 3. cepHfiHbitt commercial tests — 3aBojicKMe ncnbi- TaHWH

commercial vehicles — rpy30Bbie aB- TOMaiUHHbl

12. and the like — h TOMy no,ao6Hoe like a 1. nono6Hbw, noxoacnii; 2.3K-

BHBajieHTHblil, OflMHaKOBbltt likelihood — npaB.nonono6HocTb, Be- pOflTHOCTb likely a BCpOHTHbIM, B03M0)KHblM most likely — no Been BepoflTHocTH, Han6ojiec BcpoflTHo liken v 1. yno,no6jiflTb, 2. cpaBHMBaTb likeness n cxoactbo, no<ao6He likewise adv 1. no<ao6Ho, aHajioriiM- ho; 2.6ojiee Toro

12. keep track vsd. cjicunTb

keep (kept) v 1. AepacaTb; 2. xpaHHTb;

2. nponojixaTb (aejiaTb tto-ji.); 4. co6jiKxaaTb (npaBHJia); 5. BecTH, ynpaBJiHTb; 6. HaxoiiHTbca keep back — 3anep>KMBaTb, yuepxMBaTb keep down — npcnsiTdBOBaTb keep from — B03<aepxMBaTbCH ot keep on — npoaojiacaTb (aejiaTb 4TO-.n.) keep out — He aonycKaTb, hc no3Bo- JIHTb

keep to — co6jiioiiaTb, npnaepacMBaTb- cn

keep to go — nonnepacHBaTb keeper n CTonop

12. transactions n pi 1. BeiieHMe nejio- Bbix onepaiiMM; 2. Tpyabi HayMHoro o6mecTBa

13. Monitor V l kohTpojinpoBaTb, Ha- 6jiKxnaTb; 2. YnpaBJiflTb

monitor n 1. mohmtop; 2. KOHTpojibHbift HHflHKaTop; 3. iiaTMHK; 4. ynpaansio- maa nporpaMMa

failure monitor — yKa3aTejib oTKa3a program monitor — ynpaBJiaiomafl nporpaMMa monitoring n TeKymuft KOHTpojib

12. strides wp/ycnexH, nporpecc stride n 1. pocT, pa3BMTne; 2. mar

13. virtually adv 1. (J)aKTH4ccKH; npaK- THHeCKH; 2. BAettCTBMTeJlbHOCTH; 3. B CyiUHOCTH

virtual a 1. B03M0)KHbitt, nonycTM- MblM; 2. neMCTBHTejlbHblM, 4>aKTH- necKMii

virtual image — MHMMoe M3o6paace- HHe

virtual mass — (JjaKTMHccKaa Macca virtual memory — BHpTyajibHaa na-

MHTb

virtual value — jonycTHMoe 3HaweHHe

12. sale n ToproBJin; npoaaaca c ayK- UH oh a

sale n nponaaca; c6biT sales n paenpoaaxa sales department — omeji c6bua sales engineer — cneuna^ncT no c6hrry sales tax — Hajior c o6opoia

12. indeed adv Ha caMOM nejie, fleftcT- BMTejlbHO

13. accomplish v 1. BbinojiHHTb; 2. 3a- BepmaTb, TiocTHraTb; 3. coBepmeHCT- BOBaTb

accomplishment n 1. BbinojiHeHMc; 2. 3aBepiueHMe; 3./?/<aocTMxeHHe

12. set n 1. Ha6op, Ko\injieKT; 2. pan; ccpn«; 3. npn6op, ycTaHOBKa crystal set -zieTeKTopHbiM npneMHHK fault set — Ha6op HencnpaBHocTeft instruction set — Ha6op KOMaHA microprocessor set — MMKponpouec-

COpHblfi KOMnJTCKT toolset — KOMnjieKTnpHcnoco6jicHHH set v 1. noMcmaTb; CTaBMTb; 2. ycTa- HaBJiMBaTb, ynpexaaTb; 3. BbijiBH- raTb; 4. npncTynaTb

12. surely adv 1. 6e3ycjioBHo, kohcmho; 2. o6fl3aTejibHo, HenpcMCHHo

sure a 1. yBepeHHbift; 2. HecoMHeH- HbiH, 6eccnopHbifi; 3. BepHbiH, Ha- iiexHbiR; 4. o6«3aTejibHbiR to be sure — hccomhchho sure enough — /xcficTBHTejibHO, Ha ca- mom «aejie

12. despite prp HecMOTpn Ha in spite of HecMOTpw Ha

13. regardless of prp He3aBHCHMo ot, HecMOTp« Ha

regard n BHHMamic, othouichhc regard v 1. ynnTbiBaTb, cmrraTb; 2 pac CM3TpHBaTb; 3. OTHOCHTbCfl, HMeTb OTHOliieHHC, KacaTbCfl have regard to — yMMTbiBaTb, o6pa- maTb BHHMaHMe as regards — hto KacaeTc.H in regard — 0TH0CHTejibH0 in this regard — b 3Tom oTHomemiH without regard for — He yHHTbiBaa regarding prp oTHocHTCjibHo; o, 06; mto KacacTcw

12. port n 1. npoxofl, KaHaji; 2. bxoa, BbLXOH; 3. T0HK3 T!OHKJTIOMeHH5I (BHeiu • Hero ycrpoHCTBa k 3BM), nopTjioc- Tyna

port way — KaHaji

exhaust port — BbinycKHoe oTBepcTHe input/output port — nopT BBOAa/Bbi- BOiia

portables 1. nopTaTHBHbiii, nepeHoc- HOH; 2. M06HJlbHbIH (O npOZpCLMM- hom o6ecneveHuu) portage n nepeB03Ka, TpaHcnopT portal a 1 BopoTa; 2. nopTaji

12. whereby adv 1. nocpe/icTBOM qero-Ji.; 2. TeM caMbiM; b pe3y;ibTaTe qero-Ji. wherein — b kotopom; TaM, riie whereof — M3 KOToporo; o kotopom whereupon — nocjie ^licro, BCjeflCTBne

13. feed (fed) v 1. riHTaTb; 2. noiiaBaTb, CHa6xaTb

feed n 1 rniTaHHe; 2. cHaGxeHHe feedback n o6paTHa« CB«3b feeder n noflaiomHfi MexaHH3M

12. item n 1. KOMnoHeHT, cocTaBJiflio- ma«; homcp, 2. eflHwma HHc})opMa uhh; aeTajib; sjicmcht; 3. nyHKT; no 3HUHA (B Ta6jlHUe), CTaTbfl (HMnop- Ta), 4. npeaMeT (o6cy>Kj[icHHfl); Bon poc; 5, coo6meHHe

item v (JjHKcnpoBaTb no nyHKTaM

12. store v xpaHHTb, HaKanjiHBaTb, 3a- noMHHaTb

store n 3anoMHHaK)mee ycTpoHCTBo, naMHTb (3BM) store up — HaKanjiHBaTb; 3anoMHHaTb storage n 1. xpaHemic; 2. 3anoMM~ Haiomcc ycrpoftcTBo (3Y), naMHTb

12. retrieve v 1 BocciaHaBJiHBaTb; 2. hc- npaBJiiiTb; 3. oTbicKHBaTb HH(|)opMa-

UHIO

retrieval n 1. BoccTaHOBJieHHe, 2. no HCK

12. erase v cTnpaTb, yaajiflTb (3anncb): BbmepKHBaTb, pa3pymaTbHH(J)opMa- UHK)

erasure n cTHpaHHe, pa3pymeHHe (HH(J)OpMaiIHH)

12. issue v 1. nponcxojiHTb, nojiynaTb c« H3; 2. BHTeKaTb; 3. BbinycKaTbCfl, H3.naBaTbcfl

issue n I. Bonpoc; 2. Bbinycx; 3. pe- 3yjibTaT, Hcxoii

12. read (read) v 1. HHTaTb, cHHTbiBaTb; 2. cHHMaTb noKa3aTejni

readings n noKa3aTe;iH npn6opa read while writing - cqHTbiBaTb ojiho BpeMeHHo c 3anncbK) readback n chmtmBaHHC TOJibKo hto 3anHCaHHOH HH(J)OpMaUHH

12. implement v 1 ocymecTBJiflTb, bw nojiH«Tb; 2. ocHaiuaTb, BHejipflTb implementation n 1. ocymccTBJieHHe,

Bbino^HeHHe, 2 BHe^peHHe, ocHa meHHe

12. incorporate v 1. BKJUonaTb; 2. o6t> eflHHflTb

Incorporation n o6'be£hHeHMe, Kop nopauHh

12. flexible a 1. ni6iaift, nonBHXHbift;

2. MHorouejicBoR, mnpoKoro Ha3Ha- neHHfl, yHHBepcajibHLiW flexibility n 1. rn6KocTb; 2. npncno-

co6ji«eMocTb

12. mainframe a: mainframe computer 6ojibiua« 3BM

13. hardware n 1. annapaTypa; tcxhh- necKHe cpencTBa; 2. annapaTHbie

cpencTBa 3BM

hardware-compatible — annapaTHo- COBMeCTHMblW

12. software n nporpaMMHoe o6ecne- neHHe; nporpaMMHbie cpencTBa

13. restrict v orpammnBaTb restriction n orpammeHne

14. artificial a ncKyccTBeHHbift artn 1. HeKyedBo, yMeHHe; 2. Texmi

Ka, TcxHOJiorn« computer art — BbmncjuiTejibHafl Tex- HHKa

state of the art — coBpeMeHHoe co- CTO«HHe, COBpeMeHHblR ypOBCHb pa3BHTH«

12. fail v 1. (o npu6opax) ncpccTaTbueH- cTBOBaTb; 2. He yjiaBaTbCfl; 3.6biTb He BCOCTOflHHH

without fail — HenpeMeHHo, o6«3a- TejIbHO fail-proof a 6e30TKa3Hbift fail-safe a Ha^exHbiH npn 0TKa3e ot- nejibHbix 3JieMeHT0B failsoft o orpaHH^eHHo HanexHbifi failure n 1 noBpe>KueHHe, 0TKa3, He- HcnpaBHOCTb; 2. Hecnoco6HocTb, HeB03M0)KH0CTb degradation failure — nocTcncHHbiM OTK33

infant failure — paHHufi otk33 oxide failure — iiec^eKT oKCHiiHoro CJIOfl

12. error n oimi6Ka; norpeuiHocTb trial and error method - Mema npo6

h ouih6ok erroneous a oiUH6oHHbift

12. message n 1. coo6memie, 2. hh-

(})OpMaUH«

12. trend n 1. o6iuee HanpaBJieHHe, TeHiieHUH«; 2. xo;i, TeneHHe

trend v 1 HMeTb TeHneHUHio; 2. ot-

KJlOHHTbCfl

12. checking n npoBepxa

checks L npoBepxa, K0HTp0Jib; 2. koh- ipojibHoe npHcnoco6jieHHe; 3. npe- n«TCTBne, 0CTaH0BKa, 3aaepxKa without check — 6e3 3a^epxKH check v 1. KOHTpojinpoBaTb; 2. npe- n«TCTBOBaTb check in — penicTpupoBaTb check up — npoBcp«Tb check with — coBna^aTb c, cootbct- CTBOBaTb check problem — MOiiejibHaji 3ajiaHa check standard — 3TajioH built-in check n 1. BHyrpeHHMft koh Tpojib; 2. BCTpoeHHbie cpencTBa KOHTpOJIfl desk check — npoBepKa BpyMHyio checker n cpejicTBo kohtpojih checking meter—KOHTpojibHbift npn6op checkout n 1 npoBepKa; 2. HajiaiiKa

12. intend v 1. HaMepeuaTbcji; HMCTb b BHjiy; 2 npejiHa3HaHaTb

intended o npe,aHa3HaMeHHbiH

12. apparent a 1. oweBHiiHbitt, HBHbitt,

2. Ha6jiK)jiaeMbiR

apparently adv oneBHiiHo

12. merge v cjinBaTbc«, cocjuiHHTbCH merging n cjuiHHHe, o6i>e;iMHeHHe mode merging — chjtthc y3JioB (rpa<J>a)

13. hinder v 1. MeiuaTb, npenflTCTBo- BaTb; 2. 3a,nepxHBaTb

hindrance n no\iexa, nperurrcTBHe

12. crucial a 1. kphthhcckhh , pemaio- mnft; 2. BaxHbift

13. sustain v 1. noaaepxHBaTb, coxpa- H«Tb; 2. noiHBepamaTb, 3. Bbmepxn- BaTb

sustain effort — miHTejibHo .zicttcTByio- LUee ycMJiue

sustain vibration — He3aTyxaiomee KOJie6aHHe sustention n 1. noimepacKa; 2. coxpa- HCHMe; 3. Bti/iepXHBaHHe

12. execution n BbinojiHeHMc execute v BbinojiHHTb, wcnojiHHTb

13. sharing n 1. AejieHne; 2. pacnpefle- jieHHe; 3. cobmccthoc n0Jib30BaHHe share n 1. aojiji, nacTb; 2. y^acTHe share v 1. AejiMTb; 2. pacnpcACJiHTb;

2. NpMhmMaTb ynacTMe share characteristics — hMeTb o6mne xapaKTepncTmkm

12. Unified o ennHoo6pa3HbiR

unify v o6'beziMHflTb_J yHM(J)MUnpoBaTb uniform a 1. onHoponHbin; 2. paBHO- MepHbiW; 3. HenpepbiBHbiH uniformity n 1. onHoponHocTb; 2. no-

CTOHHCTBO

uniformly adv 1. oahopoaho; 2. no- CTOflHHO

unit n 1. eziMHMua (<fiu3unecKax eenu- huho)\ 2. arperaT, ycTpoftcTBo;

2. y3eji, Mo/iy/ib unite v oG-beAHHHTb unity n 1. camhctbo; 2. enHHima

12. environment n 1. OKpyxaiomafl cpe- Aa; cpeAa, OKpyaceHMe; 2. ycjiOBMH 3KcnjiyaTauMM

environmental a OKpyacaiomnft, BHern- HMM

12. brand n copT, KanecTBO

brand a 3d. 3aMC4aTCJibHbift, nojib- 3yiomHMC5i BbicoKoii penyTaixneH

12. script n 1. pyKonMCHbift mpn^)T; 2. TeKCT, cueHapnft

script language komh. H3biK cueHa- pneB

12. approach n 1. mctoa, noAXOA; 2. npM6jiM)KeHMe; 3. noAana, noABOA;

2. AnnpoKcmMaiiMh